FREESCALE MRFE6S9201HSR3

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9201H
Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRFE6S9201HR3
MRFE6S9201HSR3
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 40 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.8 dB
Drain Efficiency — 31.3%
Device Output Signal PAR — 8.1 dB @ 0.01% Probability on CCDF
ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 270 W CW
(2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 40 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9201HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9201HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 197 W CW
Case Temperature 75°C, 40 W CW
RθJC
0.34
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9201HR3 MRFE6S9201HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.5
2.2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2.25
2.9
3.75
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 4.11 Adc)
VDS(on)
0.1
0.21
0.35
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.3
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
90
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
480
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 40 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
19.5
20.8
22.5
dB
Drain Efficiency
ηD
29
31.3
—
%
PAR
7.7
8.1
—
dB
ACPR
—
- 46.5
- 45
dBc
IRL
—
- 16
-9
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched on input.
(continued)
MRFE6S9201HR3 MRFE6S9201HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 200 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
10
—
Gain Flatness in 35 MHz Bandwidth @ Pout = 40 W Avg.
GF
—
0.19
—
dB
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ Pout = 200 W CW
Φ
—
0.461
—
°
Delay
—
11.66
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 200 W CW,
f = 880 MHz, Six Sigma Window
ΔΦ
—
14.97
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.011
—
dB/°C
ΔP1dB
—
0.39
—
dBm/°C
Average Group Delay @ Pout = 200 W CW, f = 880 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MRFE6S9201HR3 MRFE6S9201HSR3
RF Device Data
Freescale Semiconductor
3
B1
VBIAS
+
R4
C2
C4
R1
RF
INPUT
C8
Z1
Z2
Z3
Z4
Z6
Z5
Z7
Z8
Z9
C1
C43
C6
C7
C9
R2
B2
+
R3
C3
C20
C5
C29
C31
C30
C28
C27
VSUPPLY
+
+
C42
C26
Z10
C10
Z12
C40
Z13 Z14
Z15
C12
Z16
C13
Z17
C16
Z18
Z19
C18
C21
Z20
Z21
C22
Z22
Z23
Z24
Z25
Z26
RF
OUTPUT
C39
C11
C41
Z11
C15
C14
C17
C19
C23
C24
C25
C32
C38
DUT
C44
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.227″
0.938″
0.492″
0.046″
0.094″
0.141″
0.076″
0.023″
0.170″
x 0.065” Microstrip
x 0.065” Microstrip
x 0.065” Microstrip
x 0.300″ Microstrip
x 0.300″ Microstrip
x 0.546″ x 0.300″ Taper
x 0.734″ x 0.546″ Taper
x 0.780″ x 0.734″ Taper
x 0.780″ Microstrip
Z10, Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
C46
C37
0.853″
0.084″
0.086″
0.035″
0.093″
0.131″
0.047″
0.054″
C36
x 0.100″
x 0.780″
x 0.780″
x 0.780″
x 0.709″
x 0.499″
x 0.365″
x 0.365″
C35
C34
+
+
C33
C45
Microstrip
Microstrip
Microstrip
x 0.709″ Taper
x 0.499″ Taper
x 0.286″ Taper
Microstrip
Microstrip
Z19
Z20
Z21, Z22
Z23
Z24
Z25
Z26
PCB
0.020″ x 0.365″ Microstrip
0.097″ x 0.065″ Microstrip
0.050″ x 0.065″ Microstrip
0.305″ x 0.065″ Microstrip
0.456″ x 0.065″ Microstrip
0.357″ x 0.065″ Microstrip
0.340″ x 0.065″ Microstrip
Taconic RF - 35, 0.030″, εr = 3.5
Figure 1. MRFE6S9201HR3(HSR3) Test Circuit Schematic
MRFE6S9201HR3 MRFE6S9201HSR3
4
RF Device Data
Freescale Semiconductor
Table 5. MRFE6S9201HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Short RF Beads
2743019447ROP50
Fair - Rite
C1, C4, C5, C20, C39, C44
33 pF Chip Capacitors
ATC100B330JT500XT
ATC
C2, C3
10 μF, 50 V Tantalum Capacitors
T491C106K050AT
Kemet
C6, C32, C38, C43
0.6 - 4.5 pF Variable Capacitors, Gigatrim
27271SL
Johanson
C7, C12, C13, C14, C15, C16,
C17, C25
3.3 pF Chip Capacitors
ATC600F3R3BT250XT
ATC
C8, C9
4.7 pF Chip Capacitors
ATC600F4R7BT250XT
ATC
C10, C11
15 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C18, C19, C21, C22, C23, C24
1.0 pF Chip Capacitors
ATC600F1R0BT250XT
ATC
C26, C45
470 μF, 63 V Electrolytic Capacitors
EKMG630ELL331MJ20S
United Chemi - Con
C27, C34
1.2K pF Chip Capacitors
ATC100B1R2BT500XT
ATC
C28, C35
20K pF Chip Capacitors
ATC200B203MT50XT
ATC
C29, C31, C37, C46
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C30, C36
0.047 pF, 50 V Chip Capacitors
C1825C473J5RAC
Kemet
C33, C42
22 μF, 50 V Tantalum Capacitors
T491C226K050AT
Kemet
C40, C41
5.6 pF Chip Capacitors
ATC600F5R6BT250XT
ATC
R1, R2
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
R3, R4
1 KΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
C27
R4
B1
C28 C30
C31
C26
C2
C4
C42
C10
R1
C29
C40 C16 C18
C1
C6
C5
C43
C9
R2
CUT OUT AREA
C7
C13 C21
C14 C23
C15
C32
C24
C38
C41 C17 C19
C46
C44
C11
C3
C39
C22 C25
C12
C8
C20
C33
MRFE6S9201H/HS
Rev. 0
R3
C37
B2
C34 C35 C36
C45
Figure 2. MRFE6S9201HR3(HSR3) Test Circuit Component Layout
MRFE6S9201HR3 MRFE6S9201HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
35
30
ηD
25
19
VDD = 28 Vdc, Pout = 40 W (Avg.)
IDQ = 1400 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
18
17
−45
16
ACPR
15
−50
IRL
14
13
12
800
20
−40
−55
−60
ALT1
820
840
860
880
900
920
940
−65
960
0
−5
−10
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
20
ηD, DRAIN
EFFICIENCY (%)
21
Gps, POWER GAIN (dB)
40
Gps
ACPR (dBc), ALT1 (dBc)
22
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ Pout = 40 Watts Avg.
40
30
Gps, POWER GAIN (dB)
20
19
Gps
18
17 ACPR
16
15
VDD = 28 Vdc, Pout = 84 W (Avg.)
IDQ = 1400 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
20
−30
−35
−40
IRL
−45
14
−50
13
−55
12
800
ALT1
820
840
860
880
900
920
940
−60
960
0
−5
−10
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
21
ηD, DRAIN
EFFICIENCY (%)
50
ηD
ACPR (dBc), ALT1 (dBc)
22
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ Pout = 84 Watts Avg.
23
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
IDQ = 2100 mA
Gps, POWER GAIN (dB)
22
1750 mA
21
1400 mA
20
1050 mA
19
700 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
18
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
IDQ = 700 mA
−30
−40
1050 mA
−50
1750 mA
1400 mA
2100 mA
−60
−70
1
10
100
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9201HR3 MRFE6S9201HSR3
6
RF Device Data
Freescale Semiconductor
0
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−40
3rd Order
−60
−80
5th Order
7th Order
−100
1
10
−10
−20
IM3−U
−30
IM3−L
IM5−U
−40
IM5−L
−50
IM7−U
IM7−L
−60
1
400
100
VDD = 28 Vdc, Pout = 200 W (PEP), IDQ = 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Pout, OUTPUT POWER (dBm)
63
P6dB = 54.86 dBm (306.2 W)
62
61
60
Ideal
P3dB = 54.18 dBm (261.82 W)
59
58
57
56
P1dB = 53.21 dBm
(209.41 W)
Actual
55
54
53
52
51
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 880 MHz
29
30
31
32
33
34
35
36
37
38
39
40
Pin, INPUT POWER (dBm)
70
VDD = 28 Vdc, IDQ = 1400 mA
60 f = 880 MHz, N−CDMA IS−95 (Pilot
Sync, Paging, Traffic Codes 8
50 Through 13)
40
85_C
−20
25_C
−30
−30_C −40
−50
ACPR
25_C
85_C
30
Gps
−60
TC = −30_C
20
−70
85_C
ALT1
10
25_C
ηD
0
1
10
100
−80
−90
300
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulsed CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRFE6S9201HR3 MRFE6S9201HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
23
85_C 50
85_C
40
19
30
18
20
VDD = 28 Vdc
IDQ = 1400 mA
f = 880 MHz
ηD
17
10
21
20
19
10
28 V
VDD = 24 V
16
1
Gps, POWER GAIN (dB)
25_C
21
20
IDQ = 1400 mA
f = 880 MHz
25_C 60
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
TC = −30_C
Gps
22
22
70
−30_C
0
400
100
32 V
18
50
0
100
150
200
250
300
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
350
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 40 W Avg., and ηD = 31.3%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9201HR3 MRFE6S9201HSR3
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
100
−10
−20
10
1
−40
−50
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
−30
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
..........................................
..................
. . . .
...
..
..
...
..
..
.
..
..
..
...
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
..
Integrated BW
Integrated BW
.
.
.
.
.
.
...
.
..
.
...
.
.
.
...........
.
.
.
.
.
.
.
.
.
.
..... ...
.................
..........
...... . . ...
.
.............
..................
........
...
..........
......
...
...........
......
.
.
.
................
.
.
.
.
.
.
..........
.
...
.
.
............ −ACPR in 30 kHz +ACPR in 30 kHz ...................
.....
....
.
.
.
.
...
..
............ .
.
.
...... .
.
.
.
.
.
.......
..............
.
...
Integrated BW
Integrated BW
..
........
...........
.................
......
.....
......
...
−100
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRFE6S9201HR3 MRFE6S9201HSR3
RF Device Data
Freescale Semiconductor
9
Zo = 5 Ω
Zload
f = 820 MHz
f = 980 MHz
Zsource
f = 820 MHz
f = 980 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 40 W Avg.
f
MHz
Zsource
W
Zload
W
820
3.28 - j3.94
0.78 + j0.24
840
3.12 - j3.93
0.81 + j0.36
860
2.85 - j3.73
0.83 + j0.51
880
2.58 - j3.39
0.82 + j0.70
900
2.44 - j2.98
0.83 + j0.98
920
2.43 - j2.87
1.02 + j1.60
940
2.31 - j2.66
4.12 + j1.11
960
2.17 - j2.54
1.49 - j0.66
980
1.91 - j2.39
0.90 - j0.26
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRFE6S9201HR3 MRFE6S9201HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
R
(INSULATOR)
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
C
F
E
T
A
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRFE6S9201HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRFE6S9201HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRFE6S9201HR3 MRFE6S9201HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2007
• Initial Release of Data Sheet
1
Dec. 2008
• Updated Typical Performance Full Frequency Band to f = 880 MHz to match production test, p. 1
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 5
MRFE6S9201HR3 MRFE6S9201HSR3
12
RF Device Data
Freescale Semiconductor
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MRFE6S9201HR3 MRFE6S9201HSR3
Document
RF
DeviceNumber:
Data MRFE6S9201H
Rev. 1, 12/2008
Freescale
Semiconductor
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