http://www.fujielectric.com/products/semiconductor/ 2MBI200VA-060-50 IGBT Modules IGBT MODULE (V series) 600V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES IC IC pulse Collector current -IC -IC pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3) - Conditions Continuous 1ms TC =100°C 1ms 1 device AC : 1min. Maximum ratings 600 ±20 200 400 200 400 650 175 150 125 -40 ~ 125 2500 5.0 5.0 Units V V A W °C VAC Nm Note *1:All terminals should be connected together when isolation test will be done. Note *2:Recommendable Value : 3.0-5.0 Nm (M5 or M6) Note *3:Recommendable Value : 2.5-3.5 Nm (M5) Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VGE = 0V, VCE = 600V VCE = 0V, VGE = ±20V VCE = 20V, IC = 200mA VCE (sat) (terminal) VGE = 15V IC = 200A VCE (sat) (chip) VGE = 15V IC = 200A RG (int) Cies ton tr tr (i) toff tf trr VCE = 10V, VGE = 0V, f = 1MHz VCC = 300V LS = 30nH IC = 200A VGE = ±15V RG = 6.8Ω Tj = 150°C Tj =25°C VGE = 0V Tj =125°C IF = 200A Tj =150°C Tj =25°C VGE = 0V Tj =125°C IF = 200A Tj =150°C IF = 200A Symbols Conditions Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time VF (terminal) VF (chip) Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) IGBT FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Characteristics min. typ. max. 1.0 200 6.2 6.7 7.2 1.80 2.25 2.10 2.30 1.60 2.05 1.90 2.10 4 12.8 650 300 100 600 40 1.70 2.15 1.60 1.57 1.60 2.05 1.50 1.47 200 Characteristics min. typ. max. 0.23 0.41 0.050 - Units mA nA V V Ω nF nsec V nsec Units °C/W 2MBI200VA-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 450 12V VGE= 20V 400 350 Collector current: IC [A] 300 250 10V 200 150 100 8V 50 300 250 10V 200 150 100 8V 50 0 0 1 2 3 4 0 5 Collector-Emitter voltage: VCE [V] 450 3 4 5 10 Collector-Emitter Voltage: VCE [V] 150°C 350 2 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C / chip Tj=25°C 125°C 400 1 Collector-Emitter voltage: VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip Collector Current: IC [A] 12V 350 0 300 250 200 150 100 50 8 6 4 IC=400A IC=200A IC=100A 2 0 0 0 1 2 3 Collector-Emitter Voltage: VCE [V] 5 4 10 15 20 25 Gate-Emitter Voltage: VGE [V] Dynamic Gate Charge (typ.) VCC=300V, IC=200A, Tj= 25°C Gate Capacitance vs. Collector-Emitter Voltage VGE= 0V, ƒ= 1MHz, Tj= 25°C 100 20 10 Gate-Emitter voltage: VGE [V] Gate Capacitance: Cies, Coes, Cres [nF] 15V Cies Cres 1 Coes 0.1 0 10 20 Collector-Emitter voltage: VCE [V] 15 2 300 VCE 10 200 5 100 0 0 -5 VGE -100 -10 -200 -15 -300 -20 -2.0 30 400 -400 -1.0 0.0 1.0 Gate charge: Qg [μC] 2.0 Collector-Emitter voltage: VCE [V] Collector current: IC [A] 450 VGE=20V 15V 400 Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 2MBI200VA-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=6.8Ω, Tj=150°C Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=6.8Ω, Tj=125°C 10000 toff 1000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 ton tr 100 tf 10 100 200 300 400 tr 100 tf 500 0 100 200 300 400 500 Collector current: IC [A] Collector current: IC [A] Switching time vs. Gate resistance (typ.) VCC=300V, IC=200A, VGE=±15V, Tj=125°C Switching loss vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=6.8Ω, Tj=125, 150°C 30 Switching loss: Eon, Eoff, Err [mJ/pulse] 10000 Switching time: ton, tr, toff, tf [nsec] ton 10 0 toff ton 1000 tr 100 tf 10 1 10 Tj=125oC Tj=150oC 25 Eon 20 Eoff 15 10 Err 5 0 0 100 100 200 300 400 500 Gate resistance: RG [Ω] Collector current: IC [A] Switching loss vs. Gate resistance (typ.) VCC=300V, IC=200A, VGE=±15V, Tj=125, 150°C Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=6.8Ω, Tj=150°C 500 Tj=125oC Tj=150oC 120 Eon Collector current: IC [A] 140 Switching loss: Eon, Eoff, Err [mJ/pulse] toff 1000 100 80 60 40 Eoff 20 Err 10 300 200 100 0 0 1 400 0 100 Gate resistance: RG [Ω] 100 200 300 400 500 600 700 800 Collector-Emitter voltage: VCE [V] (Main terminals) 3 2MBI200VA-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) VCC=300V, VGE=±15V, RG=6.8Ω, Tj=125°C 450 1000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Forward current: IF [A] 400 350 300 250 200 150°C 150 Tj=25°C 100 50 trr lrr 100 125°C 10 0 0 1 2 Forward on voltage: VF [V] 3 0 Reverse Recovery Characteristics (typ.) VCC=300V, VGE=±15V, RG=6.8Ω, Tj=150°C 100 200 300 400 Forward current: IF [A] 500 Transient Thermal Resistance (max.) 1000 1 Thermal resistanse: Rth(j-c) [°C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] FWD trr lrr 100 10 0 100 200 300 400 IGBT 0.1 0.01 τ Rth [°C/W] 0.001 0.001 500 Forward current: IF [A] 4 [sec] IGBT FWD 0.0023 0.02467 0.04398 0.0301 0.06255 0.11150 0.0598 0.08836 0.15751 0.01 0.1 Pulse Width : Pw [sec] 0.0708 0.05442 0.09701 1 2MBI200VA-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Equivalent Circuit Schematic C1 G1 E1 C2E1 G2 E2 E2 5 2MBI200VA-060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. 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