2MBI225U4N-170-50 IGBT Modules IGBT MODULE (U series) 1700V / 225A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Conditions Ic Continuous Icp 1ms -Ic -Ic pulse Pc Tj Tstg Tc=25°C Tc=80°C Tc=25°C Tc=80°C 1ms 1 device Collector power dissipation Junction temperature Storage temperature between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals (*4) AC : 1min. Maximum ratings 1700 ±20 300 225 600 450 225 450 1040 150 -40 to +125 Units V V 3400 VAC 3.5 4.5 Nm A W °C Note *1: All terminals should be connected together when isolation test will be done. Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Symbols Conditions VGE = 0V, VCE = 1700V VCE = 0V, VGE = ±20V VCE = 20V, I C = 225mA Reverse recovery time Lead resistance, terminal-chip (*5) I CES I GES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R lead Resistance R B value B T=25°C T=100°C T=25/50°C Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*6) Rth(c-f) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage VGE = 15V I C = 225A VCE = 10V, VGE = 0V, f = 1MHz Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCC = 900V I C = 225A VGE = ±15V RG = 2.2Ω VGE = 0V I F = 225A I F = 225A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics min. typ. max. 3.0 600 4.5 6.5 8.5 2.60 2.85 3.00 2.30 2.45 2.65 21 0.62 1.20 0.39 0.60 0.05 0.55 1.50 0.09 0.30 2.05 2.35 2.25 1.80 1.95 2.00 0.18 0.6 1.30 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs V µs mΩ Ω K Note *5: Biggest internal terminal resistance among arm. Thermal resistance characteristics IGBT FWD with Thermal Compound Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 0.12 0.20 0.0167 - Units °C/W 2MBI225U4N-170-50 IGBT Modules Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C/ chip 600 600 VGE=20V 15V 500 12V Collector current : Ic [A] Collector current : Ic [A] 500 400 10V 300 200 100 0 1 2 3 4 10V 200 8V 0 2 1 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 Collector - Emitter voltage : VCE [ V ] 500 Collector current : Ic [A] 300 0 5 600 Tj=25°C Tj=125°C 400 300 200 100 0 8 6 4 Ic=450A Ic=225A Ic=112.5A 2 0 0 1 2 3 4 5 5 Collector-Emitter voltage : VCE [V] 100.0 Cies 10.0 Coes 1.0 Cres 0.1 10 20 15 20 25 Dynamic Gate charge (typ.) Vcc=900V, Ic=225A, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 1000.0 0 10 Gate-Emitter voltage : VGE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Capacitance : Cies, Coes, Cres [ nF ] 12V 400 100 8V 0 VGE=20V 15V 0 30 VGE VCE 200 400 600 Gate charge : Qg [nC] Collector-Emitter voltage : VCE [V] 2 800 2MBI225U4N-170-50 IGBT Modules Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj= 25°C Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj=125°C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 ton toff tr tf 100 10 100 200 300 tf 100 400 0 100 200 300 400 Collector current : Ic [A] Collector current : Ic [A] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=225A, VGE=±15V, Tj= 25°C Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=2.2Ω 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 10000 ton toff tr 100 tf 10 0.1 1.0 10.0 125 Eoff(125°C) 100 75 Err(125°C) Eon(125°C) Eoff(25°C) Err(25°C) 50 Eon(25°C) 25 0 100.0 0 50 100 150 200 250 300 350 400 450 Gate resistance : RG [Ω] Collector current : Ic [A] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=225A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°C Stray inductance <= 100nH 600 250 Eon 500 200 Collector current : Ic [A] Switching time : ton, tr, toff, tf [ nsec ] ton tr 10 0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff 1000 150 Eoff 100 50 Err 400 300 200 100 0 0 0.1 1.0 10.0 100.0 0 Gate resistance : RG [Ω] 500 1000 1500 Collector-Emitter voltage : VCE [V] 3 2MBI225U4N-170-50 IGBT Modules Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=900V, VGE=±15V, Rg=2.2Ω 1000 Forward current : IF [A] 500 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 600 Tj=25°C 400 Tj=125°C 300 200 100 0 Irr (125°C) Irr (25°C) trr (125°C) trr (25°C) 100 10 0 1 2 4 3 0 Forward on voltage : VF [V] 100 Transient thermal resistance (max.) 300 400 [ Thermistor ] Temperature characteristic (typ.) 1.000 100.0 FWD IGBT 0.100 Resistance : R [ kΩ] Thermal resistanse : Rth(j-c) [ °C/W ] 200 Forward current : IF [A] 0.010 0.001 0.001 10.0 1.0 0.1 0.010 0.100 -60 -40 -20 0 1.000 Pulse width : Pw [sec] 4 20 40 60 80 100 120 140 160 180 Temperature [ oC ] 2MBI225U4N-170-50 IGBT Modules N OUT P Outline Drawings, mm Equivalent Circuit Schematic C P (2) T1 [ Thermistor ] T2 G1 E1 OUT (3,4) G2 E2 N (1) 5 2MBI225U4N-170-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6