MUBW 50-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 D11 D13 22 D15 D7 NTC 8 7 2 1 9 D12 T1 16 D1 D16 D3 17 15 T7 T2 11 14 D2 T5 20 D5 19 5 6 3 D14 T3 18 T4 D4 12 4 T6 D6 13 E72873 10 23 Three Phase Rectifier 24 Brake Chopper VRRM=2200 V VCES =1700 V IFAVM = 60 A IC25 = 48 A IFSM = 550 A VCE(sat)= 2.1 V Three Phase Inverter VCES =1700 V IC25 = 74 A VCE(sat)= 2.0 V Application: AC motor drives with Input Rectifier Bridge D11 - D16 Symbol Conditions Maximum Ratings VRRM 2200 V IFAV IDAVM IFSM TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3; bridge TC = 25°C; t = 10 ms; sine 50 Hz 40 130 550 A A A Ptot TC = 25°C 110 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.5 V V 0.05 mA mA 1.1 K/W VF IF = 50 A; TVJ = 25°C TVJ = 125°C 1.25 1.25 IR VR = VRRM; TVJ = 25°C TVJ = 125°C 0.8 RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved •Input from single or three phase grid • Three phase synchronous or asynchronous motor • Electric braking operation Features •High level of integration - only one power semiconductor module required for the whole drive • IGBT technology with low saturation voltage, low switching losses and tail current, high RBSOA and short circuit ruggedness • Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery • Industry standard package with insulated copper base plate and soldering pins for PCB mounting • Temperature sense included 20090826a 1-8 MUBW 50-17 T8 Output Inverter T1 - T6 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1700 V VGES Continuous ± 20 V IC25 IC80 ICM TC = 25°C TC = 80°C TC = 80°C; tp = 1 ms 74 53 100 A A A Ptot TC = 25°C 290 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VCE(sat) IC = 50 A; VGE = 15 V VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C max. 2.0 2.4 2.4 V V 6.5 V 0.4 mA mA 400 nA 1.0 I V0 R0 IGBT (typ. at VGE = 15 V; TJ = 125°C) T1-T6 V0 = 1.0 V; R0 = 25 mW typ. 5 Conduction T7 V0 = 1.0 V; R0 = 28 mW Diode (typ. at TJ = 125°C) D1-D6 V0 = 1.35 V; R0 = 15 mW IGES VCE = 0 V; VGE = ± 20 V Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 4.4 nF V0 = 1.65 V; R0 = 37 mW QGon VCE = 900 V; VGE = 15 V; IC = 75 A 600 nC Inductive load, TVJ = 125°C VCE = 900 V; IC = 50 A VGE = ±15 V; RG = 8 Ω 250 50 500 480 11 12 ns ns ns ns mJ mJ D11-D16 V0 = 0.83 V; R0 = 4.1 mW td(on) tr td(off) tf Eon Eoff RBSOA IC = ICM; VGE = 15 V RG = 27 Ω; TVJ = 125°C tSC (SCSOA) VCE = 1000 V; VGE = ±15 V; RG = 27 Ω tP < 10 µs; non-repetitive; TVJ = 125°C VCEK < VCES - LS di/dt V 10 µs RthJC 0.43 D7 K/W Output Inverter D1 - D6 Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions Maximum Ratings 56 39 Characteristic Values min. VF IF = 50 A; A A TVJ = 25°C TVJ = 125°C IRM Qrr trr Erec IF = 50 A; diF /dt = -1200 A/µs; TVJ = 125°C; VR = 900 V; VGE = 0 V RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved typ. max. 2.0 2.0 2.4 80 20 650 9 V V A µC ns mJ 0.65 K/W 20090826a 2-8 MUBW 50-17 T8 Brake Chopper T7 Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1700 V VGES Continuous ± 20 V IC25 IC80 ICM TC = 25°C TC = 80°C TC = 80°C; tp = 1 ms 48 34 60 A A A Ptot TC = 25°C 200 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VCE(sat) IC = 30 A; VGE = 15 V VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V Ciss VCE = 25 V; VGE = 0 V; f = 1 MHz QGon td(on) tr td(off) tf Eoff Eon TVJ = 25°C TVJ = 125°C typ. max. 1.9 2.1 2.2 V V 6.5 V 0.3 mA mA 400 nA 5 0.6 4.4 nF VCE = 900 V; VGE = 15 V; IC = 30 A 600 nC Inductive load, TVJ = 125°C VCE = 900 V; IC = 30 A VGE = ±15 V; RG = 27 Ω 165 40 700 400 7 6 ns ns ns ns mJ mJ RBSOA IC = ICM; VGE = 15 V RG = 27 Ω; TVJ = 125°C tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 45 Ω tP < 10 µs; non-repetitive; TVJ = 125°C VCEK < VCES - LS di/dt V 10 µs RthJC 0.62 K/W Brake Chopper D7 Symbol Conditions VRRM TVJ = 25°C to 150°C IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions Maximum Ratings 1700 V 30 21 A A Characteristic Values min. typ. max. 3.3 V V 0.05 VF IF = 30 A; TVJ = 25°C TVJ = 125°C 2.5 2.6 IR VR = VRRM; TVJ = 25°C TVJ = 125°C 0.2 mA mA IRM trr IF = 30 A; diF /dt = -800 A/µs; TVJ = 125°C VR = 900 V 35 700 A ns RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 0.9 K/W 20090826a 3-8 MUBW 50-17 T8 Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions TVJ TJM Tstg operating VISO Maximum Ratings -40...+125 +150 -40...+125 °C °C °C IISOL < 1 mA; 50/60 Hz; 1 min. 3400 V~ Md Mounting torque (M5) 3-6 Nm Symbol Conditions Characteristic Values min. Rtherm-chip Resistance terminal to chip dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound typ. 7 12.7 9.6 max. mΩ mm mm 0.02 K/W 300 g Weight Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 20090826a 4-8 MUBW 50-17 T8 Input Rectifier Bridge D11 - D16 100 500 TVJ = 125°C TVJ = 25°C 80 400 60 IF [A] 104 IFSM [A] 40 20 300 0.5 1.0 1.5 2 [A s] 200 50Hz, 80% VRRM 0 0.01 0.1 2.0 TVJ = 150°C TVJ = 150°C 102 1 Fig. 1 Typ. forward current vs. voltage drop per diode 3 4 5 6 7 8 910 t [ms] Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 140 350 120 300 RthA: 5.0 K/W 2.5 K/W 1.5 K/W 1.0 K/W 0.75 K/W 0.5 K/W 250 200 [W] 150 100 Id(AV) 80 [A] 60 100 40 50 20 0 2 1 t [s] VF [V] Ptot TVJ = 45°C 103 100 0 0.0 2 It TVJ = 45°C 0 20 40 60 80 Id(AV)M [A] 100 120 140 20 0 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 TC [°C] Iamb [°C] Fig. 4 Power dissipation versus direct output current & ambient temperature, sin 180° Fig. 5 Max. forward current vs. case temperature 1.2 PV Rth1 TJ 1.0 Rth2 Cth1 Cth2 Ri ti TC 0.8 ZthJC 0.6 [K/W] 0.4 0.2 0.0 1 10 100 1000 1 0.06 0.0085 2 0.024 0.001 3 0.586 0.045 4 0.114 0.85 5 0.317 0.35 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 20090826a 5-8 MUBW 50-17 T8 Output Inverter T1 - T6 / D1 - D6 100 100 80 80 TVJ = 25°C TVJ = 125°C 60 IC IC [A] 40 20 20 0 0 1 2 3 0 4 11 V TVJ = 125°C 60 [A] 40 13 V VGE = 15 V 17 V 19 V 9V 0 1 2 3 4 5 VCE [V] VCE [V] Fig. 7 Typical output characteristic Fig. 8 Typical output characteristic 100 100 80 80 TVJ = 25°C TVJ = 125°C IC 60 IF TVJ = 125°C 60 TVJ = 25°C [A] 40 [A] 40 20 20 0 5 6 7 8 9 10 11 12 0 13 0 1 VGE [V] Fig. 9 Typical transfer characteristic 80 14 12 TVJ = 125°C VR = 900 V IF = 50 A 80 Ω 8Ω 1400 1200 70 10 IRM 8 [A] 6 trr 27 Ω 60 1000 27 Ω 50 40 2 0 50 100 150 200 250 300 350 QG [nC] Fig. 11Typical turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 80 Ω IRM 30 400 600 800 [ns] 800 8Ω 4 0 1600 90 VCE = 900 V IC = 50 A 16 [V] 3 Fig. 10 Typical forward characteristic of free wheeling diode 18 VGE 2 VF [V] 1000 1200 -di/dt [A/µs] Fig. 12 Typ. turn-off characteristics of free wheeling diode trr 600 400 1400 20090826a 6-8 MUBW 50-17 T8 Output Inverter T1 - T6 / D1 - D6 30 30 Eon VCE = 900 V VGE = ±15 V 25 Eoff RG = 8 Ω TVJ = 125°C 20 E 20 E [mJ] Erec 10 Eon VCE = 900 V VGE = ±15 V IC /IF = 50 A TVJ = 125°C 15 Eoff 10 Erec [mJ] 5 0 0 20 40 60 80 100 0 0 20 40 IC, IF [A] 60 80 RG [Ω] Fig. 13 Typ. turn on energy & switching times versus collector current 24 Fig. 14 Typ. turn off energy and switching times versus collector current 0.7 diode single pulse 0.6 20 0.5 16 IGBT Qrr 12 VCE = 900 V VGE = ±15 V 8 RG = 8 Ω TVJ = 125°C [µC] ZthJC 0.4 [K/W] 0.3 0.2 4 0 0.1 0 20 40 IF [A] 60 80 100 0.0 1 10 100 1000 10000 t [ms] Fig. 16 Transient thermal impedance junction to case Fig. 15 Typical turn-off characteristics of free wheeling diode Temperature Sensor NTC IGBT 10000 R 1000 Diode Ri ti Ri ti 1 0.0326 0.0014 0.1941 0.0206 2 0.1311 0.0258 0.0542 0.0016 3 0.1492 0.1099 0.2549 0.0930 4 0.1169 0.6361 0.1461 0.5958 [Ω] 100 0 30 60 90 120 R R R C C C 150 T [°C] Fig. 17 Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 20090826a 7-8 MUBW 50-17 T8 Brake Chopper T7 / D7 60 60 50 50 TVJ = 25°C TVJ = 25°C 40 TVJ = 125°C IC [A] 40 IF 30 [A] 30 20 20 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TVJ = 125°C 0 0.0 4.0 0.5 1.0 VCE [V] 1.5 2.0 2.5 3.0 Fig. 18 Typical output characteristic Fig. 19 Typ. forward characteristics of brake diode 30 30 Eon VCE = 900 V VGE = ±15 V Eoff 20 E E [mJ] 15 Eoff 10 Erec [mJ] Erec 10 Eon VCE = 900 V VGE = ±15 V IC /IF = 50 A TVJ = 125°C 25 RG = 8 Ω TVJ = 125°C 20 3.5 VF [V] 5 0 0 20 40 60 80 0 100 0 20 IC, IF [A] 40 60 80 RG [Ω] Fig. 20 Typ. turn on energy & switching times versus collector current Fig. 21 Typ. turn off energy and switching times versus collector current 15 1.0 ICE = 30 A VCE = 900 V diode single pulse 0.8 10 IGBT ZthJC 0.6 VGE [V] [K/W] 5 0.4 0.2 0 0 50 100 150 200 250 300 350 QG [nC] Fig. 22 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 0.0 1 10 100 1000 t [ms] Fig. 23 Transient thermal impedance junction to case 10000 20090826a 8-8