Data Sheet N0201R R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES Complements to N0201S. VCEO = 25 V IC(DC) = 1.0 A Miniature package SOT-23F (2SB798: Package variation of 3pPoMM) PRODUCT LINEUP Part Number N0201R-T1-AT Packing Tape 3000p/reel Package Name SOT-23F Package Code PVSF0003ZA-A Mass [TYP.] 0.0126g ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to Base Voltage Symbol VCBO Ratings 30 Unit V VCEO 25 VEBO 5.0 IC(DC) 1.0 IC(pulse) 1.5 Total Power Dissipation PT1 0.2 Total Power Dissipation *2 PT2 1.0 Junction Temperature Tj 150 Storage Temperature Tstg 55 to 150 Note *1. PW 10 ms, Duty Cycle 50% 2 *2. FR-4 board size 2500 mm 1.6 mm, t 5 sec Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) *1 V V A A W W C C ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Base to Emitter Voltage Gain Bandwidth Product Output Capacitance Note *1. Pulsed Symbol ICBO IEBO hFE1*1 hFE2*1 VCE(sat)*1 Condition VCB = 30 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 1.0 V, IC = 100 mA VCE = 1.0 V, IC = 1.0 A IC = 1.0 A, IB = 100 mA VBE(sat)* VBE*1 IC = 1.0 A, IB = 100 mA VCE = 6.0 V, IC = 10 mA fT Cob VCE = 6.0 V, IE = 10 mA VCB = 10.0 V, IE = 0, f = 1.0 MHz 1 MIN. TYP. 90 50 200 100 0.25 600 1.0 640 90 27 MAX. 100 100 400 Unit nA nA 0.4 V 1.2 700 V mV MHz pF hFE Classification Marking hFE1 DM 90 to 180 R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 DL 135 to 270 DK 200 to 400 Page 1 of 4 N0201R TYPICAL CHARACTERISTICS (Ta = 25C) DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA −10 100 IC - Collector Current - (A) dT - Percentage of Rated Power - % 120 SAFE OPERATING AREA 80 60 40 20 Ta = 25˚C Single pulse 1 ms −1 10 ms 100 ms −0.1 −0.01 −1 −10 VCE - Collector to Emitter Voltage - (V) 0 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE −0.03 IC - Collector Current - (A) IC - Collector Current - (A) −80 −70 −60 −50 −0.01 −5.0 −0.8 −90 −0.02 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE −1 −100 −40 −30 −4.5 −4.0 −3.5 −0.6 −3.0 −2.5 −0.4 −2.0 −1.5 −1.0 −0.2 −20 IB = −0.5 mA IB = −10 A 0 −2 −4 −6 −8 VCE - Collector to Emitter Voltage - (V) 0 VCE(sat) - Collector Saturation Voltage - (V) VBE(sat) - Base Saturation Voltage - (V) 125˚C hFE - DC Current Gain 0 −10 DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 25˚C 25˚C 100 VCE = −1 V Pulsed 10 −0.001 −100 −0.01 −0.1 −1 IC - Collector Current - (A) R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 −10 −0.4 −0.8 −1.2 −1.6 VCE - Collector to Emitter Voltage - (V) 0 −10 −2 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 10IB −1 VBE(sat) −0.1 VCE(sat) −0.01 −0.001 −0.001 −0.01 −0.1 −1 IC - Collector Current - (A) −10 Page 2 of 4 N0201R 1000 VCE = −6 V Pulsed fT - Gain Bandwidth Product - (MHz) IC - Collector Current - (A) −10 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE −1 TA = 125˚C −0.1 25˚C −25˚C −0.01 −0.001 VCE = −6 V 100 10 −1 Cob - Output Capacitance - (pF) 100 −0.3 −0.6 −0.9 VBE - Base to Emitter Voltage - (V) −1.2 OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE IE = 0 f = 1.0 MHz 10 1 −0.1 −1 −10 −100 VCB - Collector to Base Voltage - (V) R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 1000 −10 −100 IC - Collector Current - (mA) −1000 SWITCHING TIME vs. COLLECTOR CURRENT ton tSW - Switching Time - (ns) −0.0001 −0.0 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT tstg 100 tf VCE = −10 V IC = 10IB1 = −10IB2 PW = 50 μs 10 −10 −100 −1000 IC - Collector Current - (mA) −10000 Page 3 of 4 N0201R PACKAGE DRAWING (Unit: mm) 3 2 1 1: Emitter 2: Base 3: Collector R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 Page 4 of 4 Notice 1. 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