ONSEMI NDD04N60Z

NDF04N60Z, NDP04N60Z,
NDD04N60Z
N-Channel Power MOSFET
1.8 W, 600 Volts
Features
•
•
•
•
http://onsemi.com
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
VDSS
RDS(ON) (TYP) @ 2 A
600 V
1.8 Ω
Applications
• Adapter (Notebook, Printer, Gaming)
• LCD Panel Power
• Lighting Ballasts
4
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
NDF
NDD/NDP
Drain−to−Source Voltage
VDSS
600 (Note 1)
V
Continuous Drain Current
ID
4.0 (Note 2)
A
Continuous Drain Current
TA = 100°C
ID
2.7 (Note 2)
A
Pulsed Drain Current, VGS @ 10V
IDM
14 (Note 2)
A
Power Dissipation (Note 1)
PD
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche Energy,
L = 6.4 mH, ID = 4.0 A
EAS
51
mJ
ESD (HBM) (JESD 22−114−B)
Vesd
2500
V
RMS Isolation Voltage (t = 0.3
sec., R.H. ≤ 30%, TA = 25°C)
(Figure 13)
VISO
Peak Diode Recovery
dv/dt
4.5 (Note 3)
V/ns
IS
4.0
A
TL
TPKG
300
260
°C
TJ, Tstg
−55 to 150
°C
Continuous Source Current
(Body Diode)
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for 10 s
Package Body for 10 s
Operating Junction and
Storage Temperature Range
28
95
4500
4
Unit
1 2
1
1
3
2
2
3
3
3
DPAK
TO−220FP TO−220AB
IPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 2
STYLE 1
STYLE 5
STYLE 2
1
2
W
−
V
MARKING DIAGRAMS
4
Drain
YWW
4N
60ZG
Symbol
NDF04N60ZG
or
NDP04N60ZG
AYWW
Gate
Source
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
2. Limited by maximum junction temperature
3. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
4
Drain
1 2 3
Gate Drain Source
YWW
4N
60ZG
Rating
2
1 Drain 3
Gate Source
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 0
1
Publication Order Number:
NDF04N60Z/D
NDF04N60Z, NDP04N60Z, NDD04N60Z
THERMAL RESISTANCE
Symbol
NDF04N60Z
NDD/NDP
Unit
Junction−to−Case (Drain)
Parameter
RqJC
4.4
1.3
°C/W
Junction−to−Ambient Steady State (Note 4)
RqJA
50
50
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
600
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
25°C
VDS = 600 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
150°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 2.0 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 250 mA
VGS(th)
VDS = 15 V, ID = 2.0 A
gFS
3.3
S
Ciss
535
pF
Coss
62
Crss
14
Qg
19
±10
mA
2.0
W
4.5
V
ON CHARACTERISTICS (Note 5)
Forward Transconductance
1.8
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDD = 300 V, ID = 4.0 A,
VGS = 10 V
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Gate Resistance
nC
Qgs
3.9
Qgd
10
Rg
4.7
W
td(on)
13
ns
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 4.0 A,
VGS = 10 V, RG = 5 Ω
Fall Time
tr
9.0
td(off)
24
tf
15
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 4.0 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 4.0 A, di/dt = 100 A/ms
trr
285
ns
Qrr
1.3
mC
Reverse Recovery Charge
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
1.6
V
NDF04N60Z, NDP04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
8
15 V
TJ = 25°C
6
10 V
7V
VDS ≥ 30 V
ID, DRAIN CURRENT (A)
8
6.8 V
6.6 V
4
6.4 V
6.2 V
6.0 V
2
6
4
TJ = 150°C
TJ = 25°C
2
5.8 V
5.6 V
0
5
10
15
20
25
TJ = −55°C
3
5
7
6
8
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 2 A
TJ = 25°C
3
2.5
2
1.5
5
6
7
8
9
10
VGS (V)
3
TJ = 25°C
2.5
2
VGS = 10 V
1.5
1
0.5
1
1.5
2
2.5
3
3.5
4
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6
10,000
VGS = 0 V
ID = 2 A
VGS = 10 V
2
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3.5
1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.4
0.8
TJ = 150°C
1000
100
TJ = 100°C
0.2
−50
−25
0
25
50
75
100
125
150
10
0
100
200
300
400
500
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
600
NDF04N60Z, NDP04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
400
QT
15
800
Ciss
600
10
400
Coss
200
0
Crss
0
50
100
150
200
200
Qgs
Qgd
VGS
5
0
100
TJ = 25°C
ID = 4 A
0
5
15
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
tr
tf
100
td(on)
10
1
10
0
20
4
td(off)
VDD = 300 V
ID = 4 A
VGS = 10 V
VGS = 0 V
TJ = 25°C
3
2
1
0
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
ID, DRAIN CURRENT (A)
1
300
VDS
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
1000
t, TIME (ns)
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 25°C
10
10 ms
1 ms
100 ms 10 ms
dc
1
VGS = 10 V
Single Pulse
TC = 25°C
0.1
0.01
RDS(on) Limit
Thermal Limit
Package Limit
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
1200
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area for NDF04N60Z
http://onsemi.com
4
1000
NDF04N60Z, NDP04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
10
R(t) (C/W)
1.0
0.1
0.01
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
0.001
0.000001
0.0001
0.00001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (s)
Figure 12. Thermal Impedance for NDF04N60Z
ORDERING INFORMATION
Package
Shipping†
NDF04N60ZG
TO−220FP
(Pb−Free)
50 Units / Rail
NDP04N60ZG
TO−220AB
(Pb−Free)
In Development
NDD04N60Z−1G
IPAK
(Pb−Free)
In Development
NDD04N60ZG
DPAK
(Pb−Free)
In Development
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
LEADS
HEATSINK
0.110″ MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
http://onsemi.com
5
NDF04N60Z, NDP04N60Z, NDD04N60Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
S
Q
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
TO−220AB
CASE 221A−09
ISSUE AE
−T−
B
F
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
4
Q
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
Y
M
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
U
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
N
http://onsemi.com
6
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
NDF04N60Z, NDP04N60Z, NDD04N60Z
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
http://onsemi.com
7
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
NDF04N60Z, NDP04N60Z, NDD04N60Z
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
M
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
8
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NDF04N60Z/D