2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. http://onsemi.com Features • Glass Passivated Junctions with Center Gate Fire for Greater • • • • SCRs 25 AMPERES RMS 50 thru 800 VOLTS Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts 300 A Surge Current Capability Pb−Free Packages are Available* G A K MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 3 2N650xG AYWW 1 2 3 x A Y WW G = 4, 5, 7, 8 or 9 = Assembly Location = Year = Work Week = Pb−Free Device PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 7 1 Publication Order Number: 2N6504/D 2N6504 Series MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Rating Value Unit *Peak Repetitive Off−State Voltage (Note 1) (Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C) 2N6504 2N6505 2N6507 2N6508 2N6509 VDRM, VRRM V On-State Current RMS (180° Conduction Angles; TC = 85°C) IT(RMS) 25 A Average On-State Current (180° Conduction Angles; TC = 85°C) IT(AV) 16 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) ITSM 250 A Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 85°C) PGM 20 W PG(AV) 0.5 W 50 100 400 600 800 Forward Average Gate Power (t = 8.3 ms, TC = 85°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 85°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol *Thermal Resistance, Junction−to−Case *Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds Max Unit RqJC 1.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 2.0 mA mA VTM − − 1.8 V IGT − − 9.0 − 30 75 mA * Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = −40°C) VGT − 1.0 1.5 V Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125°C) VGD 0.2 − − V * Holding Current TC = 25°C (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = −40°C IH − − 18 − 40 80 mA * Turn-On Time (ITM = 25 A, IGT = 50 mAdc) tgt − 1.5 2.0 ms Turn-Off Time (VDRM = rated voltage) (ITM = 25 A, IR = 25 A) (ITM = 25 A, IR = 25 A, TJ = 125°C) tq − − 15 35 − − − 50 − OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM ON CHARACTERISTICS * Forward On−State Voltage (Note 2) (ITM = 50 A) * Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 W) TC = 25°C TC = −40°C ms DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (Gate Open, Rated VDRM, Exponential Waveform) *Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 dv/dt V/ms 2N6504 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) 13 0 32 P(AV) , AVERAGE POWER (WATTS) TC , MAXIMUM CASE TEMPERATURE ( °C) Anode − α 12 0 α = CONDUCTION ANGLE 110 10 0 α = 30° 90 80 0 60° 90° 180° dc 4.0 8.0 12 16 IT(AV), ON-STATE FORWARD CURRENT (AMPS) α α = CONDUCTION ANGLE 60° α = 30° 24 180° 90° dc 16 TJ = 125°C 8.0 0 20 0 Figure 1. Average Current Derating 4.0 8.0 12 16 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 20 Figure 2. Maximum On−State Power Dissipation http://onsemi.com 3 2N6504 Series 100 70 50 30 125°C 25°C 10 7.0 5.0 3.0 2.0 300 1.0 275 0.7 250 0.5 225 0.3 0.2 TC = 85°C f = 60 Hz 200 0.1 0 0.4 0.8 1.2 1.6 2.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 2.4 175 1.0 2.8 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES Figure 3. Typical On−State Characteristics r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 CYCLE I TSM , PEAK SURGE CURRENT (AMP) iF , INSTANTANEOUS FORWARD CURRENT (AMPS) 20 Figure 4. Maximum Non−Repetitive Surge Current 1.0 0.7 0.5 0.3 0.2 ZqJC(t) = RqJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 Figure 5. Thermal Response http://onsemi.com 4 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 2N6504 Series TYPICAL TRIGGER CHARACTERISTICS VGT, GATE TRIGGER VOLTAGE (VOLTS) 10 1 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 −25 −10 110 125 5 20 35 65 80 95 Figure 7. Typical Gate Trigger Voltage versus Junction Temperature 100 10 1 −40 −25 −10 50 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current versus Junction Temperature IH , HOLDING CURRENT (mA) I GT, GATE TRIGGER CURRENT (mA) 100 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) Figure 8. Typical Holding Current versus Junction Temperature http://onsemi.com 5 110 125 110 125 2N6504 Series ORDERING INFORMATION Device Package 2N6504 TO−220AB 2N6504G TO−220AB (Pb−Free) 2N6505 TO−220AB 2N6505G TO−220AB (Pb−Free) 2N6505T TO−220AB 2N6505TG TO−220AB (Pb−Free) 2N6507 TO−220AB 2N6507G TO−220AB (Pb−Free) 2N6507T TO−220AB 2N6507TG TO−220AB (Pb−Free) 2N6508 TO−220AB 2N6508G TO−220AB (Pb−Free) 2N6509 TO−220AB 2N6509G TO−220AB (Pb−Free) 2N6509T TO−220AB 2N6509TG TO−220AB (Pb−Free) http://onsemi.com 6 Shipping 500 Units / Box 2N6504 Series PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA B F −T− SEATING PLANE C 4 T S A Q 1 2 3 H K DIM A B C D F G H J K L N Q R S T U V Z U Z L V R G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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