July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications ________________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage 30 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 30 V VGSS Gate-Source Voltage - Continuous ±20 V ID Drain Current - Continuous 46 A - Pulsed 135 PD NDP6030 Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range NDB6030 Units 75 W 0.5 W/°C -65 to 175 °C THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case Rθ JA Thermal Resistance, Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 2 °C/W 62.5 °C/W NDP6030.RevB Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 100 mJ 46 A DRAIN-SOURCE AVALANCHE RATINGS (Note) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 46 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V o V mV/oC 30 TJ = 125°C 10 µA 1 mA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note) ∆VGS(th)/∆TJ Gate Threshold VoltageTemp. Coefficient ID = 250 µA, Referenced to 25 o C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 23 A 2 TJ = 125°C mV/oC -6 1.4 TJ = 125°C 2.3 4 V 1.7 2.8 0.014 0.018 0.019 0.032 60 Ω ID(on) On-State Drain Current VGS = 10 V, VDS= 10 V gFS Forward Transconductance VDS = 10 V, ID = 23 A 22 A S VDS = 15 V, VGS = 0 V, f = 1.0 MHz 1165 pF 915 pF 385 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 46 A, VGS = 10 V, RGEN = 11 Ω VDS =15 V, ID = 46 A, VGS = 10 V 9 18 nS 103 200 nS 40 80 nS 98 200 nS 34 47 nC 7 nC 13 nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 23 A (Note) 0.9 46 A 135 A 1.3 V Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6030.RevB Typical Electrical Characteristics 10 8.0 80 7.0 R DS(0N), NORMALIZED I D , DRAIN-SOURCE CURRENT (A) VGS = 20V 12 6.0 60 40 5.0 20 DRAIN-SOURCE ON-RESISTANCE 2 100 V GS 1.8 1.6 6.0 1.4 7.0 8.0 1.2 10 1 12 20 0.8 4.0 0 0.6 0 1 2 3 VDS , DRAIN-SOURCE VOLTAGE (V) 4 5 0 20 Figure 1. On-Region Characteristics. R DS(0N) , ON-RESISTANCE (OHM) 0.75 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 175 0.06 0.04 125°C 0.02 0 25°C 4 5 6 7 8 V GS , GATE TO SOURCE VOLTAGE (V) J 9 10 Figure 4. On Resistance Variation with Gate-To- Source Voltage. Figure 3. On-Resistance Variation with Temperature. 60 TA = -55°C 25°C 50 125°C 40 30 20 10 1 2 V GS 3 4 5 , GATE TO SOURCE VOLTAGE (V) 6 Figure 5. Transfer Characteristics. 7 IS , REVERSE DRAIN CURRENT (A) 60 VDS = 10V I D , DRAIN CURRENT (A) R DS(ON), NORMALIZED 1 0 100 ID = 23A VGS = 10V 1.25 0.5 -50 80 0.08 I D = 23A 1.5 40 60 I D , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.75 DRAIN-SOURCE ON-RESISTANCE = 5.0V VGS = 0V 10 TA = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 0 0.2 V 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) 1.4 1.6 SD Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDP6030.RevB Typical Electrical Characteristics (continued) 4000 VDS = 10V ID = 46A 12 20V 15V CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 15 9 6 2000 Ciss 1000 Coss 500 200 0.1 0 0 10 20 30 Q g , GATE CHARGE (nC) 40 V DS 1 3 10 , DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8.Capacitance Characteristics. 1000 300 200 10µ s 100 µs it Lim 100 R 50 N) (O DS 1ms 10 ms 100 ms DC 20 10 SINGLE PULSE R θJC =2.0° C/W TA = 25°C 800 POWER (W) ID , DRAIN CURRENT (A) 0.3 50 Figure 7. Gate Charge Characteristics. 600 400 5 VGS = 10V SINGLE PULSE o RθJC = 2 C/W TC = 25 °C 2 1 0.5 0.5 1 V DS 200 3 5 10 20 , DRAIN-SOURCE VOLTAGE (V)) 30 0 0.01 50 TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE Crss f = 1 MHz VGS = 0V 3 0.1 1 10 SINGLE PULSE TIME (ms) 100 1,000 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 D = 0.5 0.3 0.2 RθJC (t) = r(t) * RθJC RθJC = 2.0 °C/W 0.2 0.1 0.1 P(pk) 0.05 0.05 0.03 t1 0.02 0.01 0.02 Duty Cycle, D = t 1 /t 2 Single Pulse 0.01 0.01 t2 TJ - T C = P * R θJC(t) 0.05 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000 Figure 11. Transient Thermal Response Curve. NDP6030.RevB