May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted NDP508A NDP508AE NDB508A NDB508AE Symbol Parameter NDP508B NDP508BE NDB508B NDB508BE Units VDSS Drain-Source Voltage 80 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 80 V VGSS Gate-Source Voltage - Continuous ±20 V - Nonrepetitive (tP < 50 µs) ±40 V ID Drain Current - Continuous - Pulsed PD 19 17 A 57 51 A Total Power Dissipation @ TC = 25°C 75 W Derate above 25°C 0.5 W/°C -65 to 175 °C 275 °C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation NDP508.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units 55 mJ 19 A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) EAS Single Pulse Drain-Source Avalanche Energy VDD = 25 V, ID = 19 A IAR Maximum Drain-Source Avalanche Current NDP508AE NDP508BE NDB508AE NDB508BE OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ALL IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V ALL IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse 80 V 250 µA 1 mA ALL 100 nA VGS = -20 V, VDS = 0 V ALL -100 nA VDS = VGS, ID = 250 µA ALL TJ = 125°C ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 10 V, ID = 9.5 A VGS = 10 V, ID = 8.5 A ID(on) gFS On-State Drain Current Forward Transconductance TJ = 125°C 2 2.9 4 V 1.4 2.3 3.6 V 0.057 0.08 Ω 0.097 0.16 Ω 0.1 Ω 0.2 Ω NDP508A NDP508AE NDB508A TJ = 125°C NDB508AE NDP508B NDP508BE NDB508B TJ = 125°C NDB508BE VGS = 10 V, VDS = 10 V NDP508A NDP508AE NDB508A NDB508AE 19 A NDP508B NDP508BE NDB508B NDB508BE 17 A VDS = 10 V, ID = 9.5 A ALL 6 VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL 750 900 pF ALL 200 250 pF ALL 60 90 pF 9.6 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance NDP508.SAM Electrical Characteristics (T Symbol Parameter C = 25°C unless otherwise noted) Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note 2) tD(ON) Turn - On Delay Time tr Turn - On Rise Time tD(OFF) VDD = 40 V, ID = 19 A, VGS = 10 V, RGEN = 15 Ω ALL 8.5 20 nS ALL 66 110 nS Turn - Off Delay Time ALL 31 50 nS tf Turn - Off Fall Time ALL 48 80 nS Qg Total Gate Charge ALL 23.5 34 nC Qgs Gate-Source Charge ALL 4.5 nC Qgd Gate-Drain Charge ALL 11.8 nC VDS = 64 V, ID = 19 A, VGS = 10 V DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IS = 19 A, dIS/dt = 100 A/µs (Note 2) NDP508A NDP508AE NDB508A NDB508AE 19 A NDP508B NDP508BE NDB508B NDB508BE 17 A NDP508A NDP508AE NDB508A NDB508AE 57 A NDP508B NDP508BE NDB508B NDB508BE 51 A ALL 0.87 1.3 V 0.79 1.2 V ALL 78 110 ns ALL 5.2 75 A TJ = 125°C THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case ALL 2 °C/W RθJA Thermal Resistance, Junction-to-Ambient ALL 62.5 °C/W Notes: 1. NDP508A/508B and NDB508A/508B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP508.SAM Typical Electrical Characteristics 50 10 40 8.0 R DS(on) , NORMALIZED I D , DRAIN-SOURCE CURRENT (A) 12 7.0 30 20 6.0 10 5.0 DRAIN-SOURCE ON-RESISTANCE 2 V GS = 20V 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 10 12 1.2 20 1 0.8 10 20 30 40 I D , DRAIN CURRENT (A) 50 60 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.5 V G S = 10V R DS(on), NORMALIZED 2 1.5 1 0.5 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE ON-RESISTANCE I D = 9.5A R DS(ON) , NORMALIZED 8.0 1.4 0 2.5 DRAIN-SOURCE ON-RESISTANCE 7.0 1.6 0.6 6 Figure 1. On-Region Characteristics. V = 10V GS TJ = 125°C 2 1.5 25°C 1 -55°C 0.5 175 0 10 20 30 40 50 ID , DRAIN CURRENT (A) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.2 25 TJ = -55°C V DS = 10V 125 Vth , NORMALIZED 15 10 5 0 2 3 4 V GS 5 6 7 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 8 GATE-SOURCE THRESHOLD VOLTAGE (V) 20 I D, DRAIN CURRENT (A) V GS = 6V 1.8 V DS = V 1.1 GS I D = 250 µA 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (°C) 150 175 Figure 6. Gate Threshold Variation with Temperature. NDP508.SAM Typical Electrical Characteristics (continued) 50 30 I D = 250µA I S , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.15 1.1 1.05 1 0.95 0.9 -50 -25 0 TJ 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 25°C -55°C 1 0.1 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) 20 V GS , GATE-SOURCE VOLTAGE (V) C iss 1000 500 C oss 200 100 f = 1 MHz VGS = 0V C rss V DS = 12V I D = 19A 24 64 15 10 5 0 1 2 3 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 50 Figure 9. Capacitance Characteristics. 0 10 t on t d(on) V OUT R GEN tf 90% Output, Vout 10% 10% 90% DUT G Input, Vin S Figure 11. Switching Test Circuit. 40 t d(off) 90% D 30 t off tr RL V IN 20 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. VDD VGS 1.4 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 1600 CAPACITANCE (pF) TJ = 125°C 5 0.01 0.2 175 Figure 7. Breakdown Voltage Variation with Temperature. 40 VGS = 0V 10 Inverted 50% 50% 10% Pulse Width Figure 12. Switching Waveforms. NDP508.SAM Typical Electrical Characteristics (continued) T J = -55°C VGS = 10V 12 L tp t p is adjusted to reach the desired peak inductive current, I L . tp 125°C 9 + VDD 25°C 6 3 BV DSS IL VDS = 10V VDD g FS , TRANSCONDUCTANCE (SIEMENS) 15 0 0 4 8 12 ID , DRAIN CURRENT (A) 16 20 Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Unclamped Inductive Load Circuit and Waveforms. 100 50 D I , DRAIN CURRENT (A) RD O S( N) Lim it 10 10 20 1m 10 10 5 s s ms DC VGS = 20V 2 0µ µs SINGLE PULSE T C = 25°C 1 0.5 1 2 3 5 10 20 30 V GS , DRAIN-SOURCE VOLTAGE (V)) 50 100 Figure 15. Maximum Safe Operating Area. TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 1 D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R = 2.0 °C/W θJC 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.03 0.02 t1 t2 0.01 TJ - T C = P * RθJC (t) Duty Cycle, D = t 1 /t2 Single Pulse 0.02 0.01 0.01 0.1 1 10 100 1000 t1 ,TIME (m s) Figure 16. Transient Thermal Response Curve. NDP508.SAM