GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. The NE76100 is suitable for a wide variety of commercial and industrial applications. 4 24 3.5 21 3 18 Ga 2.5 15 2 12 9 1.5 6 1 NF 0.5 Associated Gain, GA (dB) • HIGH ASSOCIATED GAIN: GA = 12.0 dB typical at f = 4 GHz NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA Optimum Noise Figure, NFOPT (dB) • LOW NOISE FIGURE: NF = 0.8 dB typical at f = 4 GHz NE76100 3 0 0 1 10 20 Frequency, f (GHz) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT 1 PARAMETERS AND CONDITIONS NE76100 00 (CHIP) UNITS MIN TYP MAX 1.4 Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz dB 0.8 GA1 Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz dB 12.0 P1dB Output Power at 1 dB Gain Compression Point, f = 4 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA dBm dBm 12.5 15.0 Gain at P1dB, f = 4 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA dB dB 11.5 13.5 Saturated Drain Current at VDS = 3 V, VGS = 0 G1dB IDSS mA 30 60 100 VP Pinch Off Voltage at VDS = 3 V, ID = 100 mA V -3.0 -1.1 -0.5 gm Transconductance at VDS = 3 V, ID = 10 mA mS 20 45 IGSO Gate to Source Leak Current at VGS = -5 V µA RTH2 Thermal Resistance °C/W 1.0 10 190 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on an infinite heat sink. California Eastern Laboratories NE76100 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 5 VGD Gate to Drain Voltage V -6 V -5 mA IDSS VGS Gate to Source Voltage IDS Drain Current TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 3 V, IDS = 10 mA ΓOPT FREQ. NFOPT GA (GHz) (dB) (dB) MAG ANG Rn/50 1.0 0.55 18.0 0.90 16 0.50 2.0 0.60 15.0 0.82 34 0.48 4.0 0.80 12.0 0.70 65 0.45 6.0 1.15 10.0 0.60 95 0.39 TCH Channel Temperature °C 175 8.0 1.60 8.5 0.52 122 0.38 TSTG Storage Temperature °C -65 to +175 10.0 2.10 7.5 0.50 150 0.32 PT2 Total Power Dissipation mW 350 12.0 2.60 7.0 0.50 171 0.27 Notes: 1. Operation in excess of anyone of these parameters may result in permanent damage. 2. Mounted on an infinite heat sink. Includes effects from wirebonds. See S-Parameter data for details. TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 3 V, f = 4 GHz TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 GA Infinite Heat sink 250 200 150 100 14 2 13 12 11 1.5 NF 10 9 1 50 8 7 0.5 0 25 50 75 100 125 150 175 0 200 10 20 30 40 50 Ambient Temperature, TA (°C) Drain Current, IDS (mA) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 3 V 60 75 Transconductance, gm (mS) 100 80 VGS 0 60 -0.2 40 -0.4 20 -0.6 0 -0.8 -1.0 0 1 2 3 4 Drain to Source Voltage, VDS (V) 60 45 30 15 0 5 0 20 40 60 Drain Current, IDS (mA) 80 100 Associated Gain, GA (dB) 300 0 Drain Current, IDS (mA) 15 350 Noise Figure, NF (dB) Total Power Dissipation, PT (mW) 400 NE76100 TYPICAL SCATTERING PARAMETERS2 (TA = 25°C) j50 +90˚ j25 +60˚ +120˚ j100 S11 20 GHz +30˚ +150˚ j10 10 0 25 50 100 S11 .1 GHz S22 .1 GHz +180 ˚ – S12 .1 GHz S21 .1 GHz 1 S22 20 GHz -j10 S12 20 GHz 0˚ S21 20 GHz 2 -150˚ -30˚ 3 4 -j25 -j100 -120˚ 5 -90˚ -j50 -60˚ VDS = 3 V, lDS = 10 mA FREQUENCY S11 (GHz) MAG 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 0.99 0.999 0.996 0.986 0.971 0.951 0.905 0.859 0.818 0.784 0.759 0.739 0.726 0.718 0.713 0.711 0.712 0.715 0.719 0.725 0.732 0.739 0.747 0.755 S21 ANG -2.3 -4.5 -11.3 -22.5 -33.3 -43.9 -63.6 -81.4 -97.3 -111.4 -124.2 -135.6 -146.0 -155.4 -164.0 -172.0 -179.3 173.9 167.5 161.6 156.1 150.9 146.0 141.4 S12 MAG ANG MAG ANG 3.782 3.779 3.763 3.707 3.619 3.505 3.233 2.941 2.662 2.411 2.190 1.999 1.833 1.688 1.562 1.449 1.349 1.259 1.177 1.102 1.033 0.968 0.908 0.851 178.2 176.3 170.9 161.9 153.1 144.7 128.9 114.6 101.9 90.3 79.8 70.1 61.1 52.7 44.7 37.2 29.9 23.0 16.4 10.0 3.8 -2.1 -7.8 -13.4 0.004 0.007 0.018 0.036 0.053 0.068 0.093 0.112 0.126 0.135 0.141 0.145 0.148 0.149 0.149 0.149 0.148 0.147 0.146 0.144 0.142 0.141 0.139 0.138 86.7 86.4 83.1 76.9 70.8 65.0 54.5 45.5 37.9 31.5 26.1 21.6 17.7 14.3 11.4 8.8 6.7 4.8 3.2 1.8 0.7 -0.2 -0.9 -1.5 S22 MAG 0.769 0.769 0.767 0.759 0.747 0.731 0.694 0.657 0.624 0.598 0.577 0.562 0.552 0.547 0.545 0.545 0.548 0.554 0.561 0.569 0.579 0.589 0.601 0.613 K ANG -1.2 -2.3 -5.7 -11.4 16.8 -22.0 -31.5 -39.7 -46.8 -53.1 -58.9 -64.2 -69.3 -74.2 -79.0 -83.7 -88.3 -92.9 -97.5 -102.1 -106.7 -111.2 -115.7 -120.1 0.052 0.037 0.045 0.076 0.110 0.145 0.214 0.281 0.347 0.410 0.470 0.526 0.578 0.626 0.669 0.708 0.741 0.770 0.793 0.811 0.824 0.831 0.833 0.830 S21 MAG1 (dB) (dB) 11.6 11.5 11.5 11.2 11.4 10.9 10.2 9.4 8.5 7.6 6.8 6.0 5.3 4.5 3.9 3.2 2.6 2.0 1.4 0.8 0.3 -0.3 -0.8 -1.4 30.1 27.1 23.1 18.4 20.1 17.1 15.4 14.2 13.3 12.5 11.9 11.4 10.9 10.5 10.2 9.9 9.6 9.3 9.1 8.8 8.6 8.4 8.1 7.9 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. S-parameters include bond wires as follows: GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG. DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG. SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG. WIRE: 0.0007" (17.8 µm) DIA. GOLD. 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE76100 TYPICAL SCATTERING PARAMETERS2 (TA = 25°C) j50 +90˚ +60˚ +120˚ j100 j25 S11 20 GHz +30˚ +150˚ j10 10 0 25 50 100 S11 .1 GHz S22 .1 GHz +180 ˚ – S12 .1 GHz S21 .1 GHz 1 S22 20 GHz -j10 S12 20 GHz 0˚ S21 20 GHz 2 -150˚ -30˚ 3 4 -j25 -j100 -120˚ -j50 5 -90˚ -60˚ VDS = 3 V, lDS = 20 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 S11 MAG 0.999 0.999 0.995 0.983 0.965 0.943 0.893 0.845 0.805 0.774 0.752 0.736 0.726 0.720 0.717 0.717 0.719 0.722 0.727 0.733 0.739 0.746 0.754 0.761 S21 ANG -2.5 -5.1 -12.7 -25.2 -37.3 -48.8 -70.1 -88.8 -105.2 -119.5 -132.1 -143.3 -153.3 -162.3 -170.6 -178.1 174.9 168.5 162.5 156.9 151.6 146.7 142.1 137.7 MAG 4.692 4.668 4.662 4.572 4.435 4.261 3.860 3.451 3.078 2.754 2.477 2.242 2.042 1.870 1.722 1.592 1.477 1.374 1.282 1.197 1.120 1.049 0.983 0.921 S12 ANG 178.0 176.1 170.3 160.7 151.5 142.6 126.5 112.3 99.7 88.6 78.5 69.2 60.6 52.5 44.9 37.7 30.7 24.1 17.7 11.5 5.6 -0.2 -5.7 -11.1 MAG 0.003 0.007 0.017 0.033 0.048 0.061 0.083 0.098 0.109 0.117 0.122 0.125 0.127 0.129 0.130 0.131 0.131 0.131 0.131 0.131 0.131 0.131 0.132 0.132 S22 ANG 86.5 86.2 82.7 76.2 69.8 63.8 53.3 44.7 37.8 32.2 27.7 23.9 20.8 18.2 16.1 14.2 12.7 11.4 10.3 9.4 8.6 7.9 7.4 6.9 MAG 0.713 0.712 0.710 0.701 0.686 0.669 0.629 0.592 0.560 0.536 0.519 0.507 0.500 0.497 0.497 0.500 0.505 0.511 0.519 0.529 0.539 0.551 0.563 0.575 ANG -1.2 -2.5 -6.2 -12.2 -17.9 -23.3 -33.0 -41.1 -48.0 -54.1 -59.6 -64.8 -69.8 -74.7 -79.4 -84.2 -88.8 -93.5 -98.1 -102.7 -107.2 -111.7 -116.2 -120.6 K 0.053 0.038 0.047 0.081 0.117 0.154 0.227 0.299 0.368 0.434 0.496 0.554 0.606 0.654 0.696 0.732 0.762 0.787 0.805 0.816 0.823 0.823 0.818 0.808 S21 MAG1 (dB) 13.4 13.4 13.4 13.2 12.9 12.6 11.7 10.8 9.8 8.8 7.9 7.0 6.2 5.4 4.7 4.0 3.4 2.8 2.2 1.6 1.0 0.4 -0.1 -0.7 (dB) 31.4 28.4 24.4 21.4 19.7 18.4 16.7 15.4 14.5 13.7 13.1 12.5 12.0 11.6 11.2 10.9 10.5 10.2 9.9 9.6 9.3 9.0 8.7 8.4 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. S-parameters include bond wires as follows: GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG. DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG. SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG. WIRE: 0.0007" (17.8 µm) DIA. GOLD. 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE76100 TYPICAL SCATTERING PARAMETERS2 (TA = 25°C) j50 +90˚ +60˚ +120˚ j100 j25 S11 20 GHz +30˚ +150˚ j10 10 0 25 50 100 S11 .1 GHz S22 .1 GHz +180 ˚ – S12 .1 GHz S21 .1 GHz 1 S22 20 GHz -j10 S12 20 GHz 0˚ S21 20 GHz 2 -150˚ -30˚ 3 4 -j25 -j100 -120˚ -60˚ 5 -90˚ -j50 VDS = 3 V, lDS = 30 mA FREQUENCY S11 S21 (GHz) MAG ANG 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 0.999 0.999 0.995 0.982 0.963 0.939 0.887 0.840 0.802 0.773 0.752 0.738 0.730 0.725 0.723 0.723 0.726 0.730 0.735 0.740 0.747 0.754 0.761 0.768 -2.7 -5.4 -13.4 -26.6 -39.3 -51.4 -73.4 -92.5 -109.0 -123.3 -135.8 -146.8 -156.6 -165.5 -173.5 179.1 172.4 166.1 160.3 154.8 149.7 144.9 140.4 136.1 MAG 5.142 5.137 5.104 4.995 4.827 4.619 4.146 3.676 3.256 2.896 2.594 2.340 2.125 1.941 1.783 1.646 1.524 1.417 1.320 1.232 1.151 1.077 1.009 0.945 S12 ANG 178.0 176.0 169.9 160.1 150.6 141.5 125.2 111.0 98.6 87.6 77.6 68.6 60.1 52.2 44.7 37.6 30.8 24.3 18.0 11.9 6.0 0.4 -5.1 -10.4 S22 MAG ANG 0.003 0.006 0.016 0.031 0.045 0.058 0.078 0.092 0.102 0.108 0.113 0.116 0.118 0.120 0.121 0.122 0.123 0.124 0.124 0.125 0.126 0.127 0.128 0.129 86.5 86.1 82.5 75.7 69.2 63.2 52.7 44.4 37.8 32.6 28.5 25.1 22.4 20.2 18.4 16.8 15.6 14.5 13.6 12.9 12.2 11.7 11.2 10.8 MAG 0.694 0.693 0.690 0.680 0.665 0.647 0.606 0.569 0.538 0.516 0.500 0.490 0.485 0.483 0.484 0.487 0.493 0.500 0.508 0.518 0.529 0.541 0.553 0.566 K ANG -1.3 -2.5 -6.3 -12.5 -18.3 -23.7 -33.3 -41.2 -48.0 -53.9 -59.4 -64.5 -69.5 -74.3 -79.1 -83.8 -88.5 -93.2 -97.8 -102.5 -107.0 -111.6 -116.1 -120.5 0.054 0.039 0.049 0.083 0.120 0.158 0.233 0.307 0.378 0.445 0.508 0.565 0.618 0.664 0.705 0.739 0.766 0.787 0.802 0.810 0.812 0.808 0.800 0.787 S21 MAG1 (dB) (dB) 14.2 14.2 14.2 14.0 13.7 13.3 12.4 11.3 10.3 9.2 8.3 7.4 6.5 5.8 5.0 4.3 3.7 3.0 2.4 1.8 1.2 0.6 0.1 -0.5 32.0 29.0 25.0 22.0 20.3 19.0 17.3 16.0 15.1 14.3 13.6 13.1 12.6 12.1 11.7 11.3 10.9 10.6 10.3 9.9 9.6 9.3 9.0 8.7 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. S-parameters include bond wires as follows: GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG. DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG. SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG. WIRE: 0.0007" (17.8 µm) DIA. GOLD. 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE76100 TYPICAL SCATTERING PARAMETERS2 (TA = 25°C) j50 +90˚ j25 +60˚ +120˚ j100 S11 20 GHz +30˚ +150˚ j10 0 10 25 50 100 S11 .1 GHz S22 .1 GHz +180 ˚ – S12 .1 GHz S21 .1 GHz 1 S22 20 GHz -j10 S12 20 GHz 0˚ S21 20 GHz 2 -150˚ -30˚ 3 4 -j25 -j100 -120˚ -j50 VDS = 3 V, lDS FREQUENCY -60˚ 5 -90˚ = 40 mA S11 (GHz) MAG 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 0.999 0.999 0.995 0.981 0.961 0.937 0.885 0.838 0.800 0.773 0.753 0.741 0.733 0.728 0.727 0.728 0.731 0.734 0.739 0.745 0.751 0.758 0.765 0.772 S21 ANG -2.8 -5.6 -13.9 -27.5 -40.6 -53.0 -75.5 -94.8 -111.3 -125.6 -138.0 -148.9 -158.6 -167.3 -175.2 177.6 170.9 164.7 159.0 153.6 148.6 143.9 139.4 135.2 S12 S22 MAG ANG MAG ANG MAG 5.433 5.428 5.391 5.267 5.079 4.846 4.325 3.815 3.365 2.984 2.666 2.400 2.176 1.985 1.821 1.679 1.554 1.442 1.343 1.252 1.170 1.094 1.024 0.959 177.9 175.9 169.7 159.6 150.0 140.8 124.4 110.2 97.8 86.9 77.1 68.1 59.8 51.9 44.5 37.5 30.7 24.3 18.0 12.0 6.2 0.5 -4.9 -10.2 0.003 0.006 0.015 0.030 0.044 0.055 0.074 0.087 0.096 0.102 0.107 0.110 0.112 0.114 0.115 0.117 0.118 0.119 0.120 0.121 0.123 0.124 0.125 0.127 86.4 86.0 82.3 75.5 69.0 62.9 52.6 44.4 38.1 33.2 29.4 26.3 23.9 21.9 20.3 18.9 17.8 16.9 16.2 15.5 14.9 14.4 13.9 13.5 0.685 0.684 0.681 0.671 0.655 0.637 0.596 0.559 0.530 0.508 0.494 0.484 0.480 0.479 0.480 0.484 0.490 0.497 0.506 0.516 0.527 0.538 0.551 0.563 K ANG -1.3 -2.5 -6.3 -12.5 -18.3 -23.7 -33.1 -40.8 -47.4 -53.2 -58.5 -63.6 -68.6 -73.4 -78.2 -82.9 -87.7 -92.4 -97.1 -101.7 -106.3 -110.9 -115.4 -119.9 0.054 0.039 0.049 0.085 0.123 0.162 0.239 0.313 0.385 0.453 0.516 0.573 0.625 0.670 0.709 0.740 0.765 0.784 0.795 0.800 0.799 0.793 0.782 0.767 S21 MAG1 (dB) (dB) 14.7 14.7 14.6 14.4 14.1 13.7 12.7 11.6 10.5 9.5 8.5 7.6 6.8 6.0 5.2 4.5 3.8 3.2 2.6 2.0 1.4 0.8 0.2 -0.4 32.4 29.4 25.4 22.4 20.7 19.4 17.7 16.4 15.4 14.7 14.0 13.4 12.9 12.4 12.0 11.6 11.2 10.8 10.5 10.1 9.8 9.5 9.1 8.8 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. S-parameters include bond wires as follows: GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG. DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG. SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG. WIRE: 0.0007" (17.8 µm) DIA. GOLD. 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE76100 NE76100 LINEAR MODEL SCHEMATIC LG 0.235 GATE RG CDG RD 1.2 2 GGS 1E-6 CGS CDC 0.085 g t f=200GHz RDS CDS 0.079 RI 3 RS 2 LS 0.025 SOURCE BIAS DEPENDANT MODEL PARAMETERS Parameters 3 V, 10 mA 3 V, 20 mA 3 V, 30 mA 3 V, 40 mA g 48 mS 63 mS 70 mS 76 mS t 5 pSec 4.5 pSec 4.5 pSec 4 pSec 350 ohms 260 ohms 240 ohms 230 ohms RDS CGS 0.45 pF 0.52 pF 0.57 pF 0.61pF CDG 0.07 pF 0.068 pF 0.065 pF 0.061 pF UNITS Parameter capacitance inductance resistance conductance time frequency MODEL RANGE Units picofarads nanohenries ohms millisiemans picoseconds gigahertz Frequency: Bias: Date: 0.1 to 20 GHz VDS = 3 V, ID = 10, 20, 30, 40 mA 10/23/96 LD 0.04 DRAIN NE76100 OUTLINE DIMENSIONS (Units in µm) NE76100 (CHIP) 500 40 102 58 47 90 S S 76 76 D 133 D 360 90 70 205 G 45 Chip Thickness: 140 µm Note: All dimensions are typical unless otherwise specified. ORDERING INFORMATION PART NUMBER IDSS SELECTION NE76100 30 to 100 mA (Standard) NE76100N 30 to 60 NE76100M 60 to 100 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 12/02/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE