LOW NOISE L TO K-BAND GaAs MESFET NE71300 • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE DESCRIPTION 3 24 2.5 21 2 18 GA 1.5 15 1 12 NF 0.5 The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is suitable for both amplifier and oscillator applications in the consumer and industrial markets. 9 0 Associated Gain, GA (dB) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES 6 1 2 10 20 30 Frequency, f (GHz) NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE71300 PACKAGE OUTLINE SYMBOLS NFOPT1 GA1 PARAMETERS AND CONDITIONS 00 (CHIP) UNITS Optimum Noise Figure, VDS = 3 V, IDS = 10 mA, f = 4 GHz f = 12 GHz dB dB Associated Gain, VDS = 3 V, IDS = 10 mA, f = 4 GHz f = 12 GHz dB dB MIN 11.5 8.5 TYP MAX 0.6 1.6 0.7 1.8 14.0 9.5 P1dB Output Power at 1 dB Compression, VDS = 3 V, IDs = 30 mA, f =12 GHz dBm IDSS Saturated Drain Current, VDS = 3 V, VGS = 0 mA 20 40 120 VP Pinch-Off Voltage, VDS = 3 V, IDS = 0.1 mA V -3.5 -1.1 -0.5 gm Transconductance, VDS = 3 V, IDS = 10 mA mS 20 50 IGSO RTH (CH-C)2 Gate to Source Leakage Current at VGS = -5 V Thermal Resistance (Channel to Case) µA °C/W 14.5 1.0 10 190 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink. California Eastern Laboratories NE71300 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 5 VGD Gate to Drain Voltage V -6 VGS Gate to Source Voltage V -5 IDS Drain Current mA IDSS PIN RF Input (CW) dBm +15 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 PT2 Total Power Dissipation mW 400 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With chip mounted on a copper heat sink. TYPICAL PERFORMANCE CURVES (TA = 25 °C) POWER DERATING CURVE 300 713 NE 200 00 Total Power Dissipation, PT (mW) 400 100 0 50 100 150 200 Ambient Temperature, TA (°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE DC PERFORMANCE 50 VGS = 0 V 40 Drain Current, IDS (mA) Drain Current, IDS (mA) VDS = 3 V 30 20 10 0 -2.0 -1.0 Gate to Source Voltage, VGS (V) 0 40 -0.2 V 30 20 -0.4 V 10 0 -0.6 V 1 2 3 Drain Voltage, VDS (V) 4 5 NE71300 TYPICAL SCATTERING PARAMETERS1 90˚ 1 .8 1.5 .6 2 .4 S11 26 GHz 135˚ 4 5 S22 26 GHz .2 10 20 0 .2 .4 .6 .8 1 1.5 45˚ 3 2 3 4 5 10 20 S22 0.5 GHz -20 -10 180˚ S11 0.5 GHz S12 0.5 GHz S21 0.5 GHz 0.05 S21 26 GHz 1.00 -5 -4 -.2 1.50 Coordinates in Ohms Frequency in GHz (VDS = 2 V, ID = 10 mA) -3 -.4 -2 -.6 -.8 0.15 0˚ S12 26 GHz 2.00 225˚ 315˚ 2.50 3.00 -1.5 -1 0.10 0.50 270˚ NE71300 VDS = 2 V, ID = 10 mA FREQUENCY S11 (GHz) MAG 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 0.998 0.995 0.982 0.959 0.928 0.895 0.852 0.817 0.762 0.736 0.713 0.702 0.687 0.682 0.675 0.674 0.676 0.673 0.666 0.664 0.656 0.658 0.654 0.646 0.660 0.670 0.681 S21 ANG -7.5 -15.0 -29.9 -44.4 -58.8 -72.7 -86.5 -100.5 -113.5 -126.3 -139.6 -153.1 -166.7 -179.1 169.7 160.4 152.0 144.9 138.2 132.5 126.5 119.6 113.6 107.2 100.7 94.7 89.6 S12 S22 MAG ANG MAG ANG MAG 2.931 2.922 2.882 2.823 2.703 2.652 2.470 2.384 2.248 2.108 2.046 1.911 1.842 1.710 1.618 1.501 1.391 1.315 1.248 1.112 1.101 0.995 0.933 0.882 0.783 0.760 0.675 172.9 165.9 152.1 138.0 124.6 111.2 97.9 86.2 73.2 63.8 51.1 40.7 29.2 17.8 8.2 -2.5 -10.4 -19.8 -31.4 -36.3 -45.1 -51.5 -63.7 -71.0 -77.6 -86.4 -91.4 0.013 0.026 0.052 0.075 0.097 0.113 0.128 0.141 0.141 0.147 0.155 0.159 0.156 0.142 0.139 0.138 0.145 0.149 0.161 0.174 0.160 0.137 0.097 0.099 0.098 0.111 0.130 84.6 79.9 69.1 59.1 48.8 38.4 28.8 18.8 8.9 2.4 -4.9 -14.4 -24.5 -27.6 -31.9 -32.3 -37.8 -39.2 -42.3 -51.1 -65.9 -80.3 -76.0 -68.6 -60.6 -57.8 -57.9 0.602 0.600 0.593 0.581 0.563 0.541 0.506 0.472 0.426 0.396 0.368 0.342 0.317 0.298 0.295 0.300 0.309 0.326 0.340 0.359 0.369 0.371 0.369 0.373 0.385 0.411 0.446 K ANG -5.5 -10.8 -21.4 -31.6 -41.6 -51.6 -61.2 -71.0 -78.5 -87.2 -97.7 -109.8 -124.7 -139.0 -153.3 -165.9 -175.7 175.3 167.6 160.7 152.0 142.4 133.3 123.2 113.3 103.3 94.5 MAG2 (dB) 0.047 0.063 0.127 0.201 0.277 0.352 0.447 0.509 0.677 0.729 0.767 0.810 0.874 0.999 1.065 1.126 1.128 1.138 1.112 1.132 1.274 1.659 2.561 2.679 2.919 2.495 2.220 23.531 20.507 17.437 15.756 14.451 13.705 12.855 12.281 12.026 11.566 11.206 10.799 10.722 10.807 9.101 8.207 7.642 7.198 6.860 5.846 5.230 3.865 2.913 2.369 1.496 1.561 0.919 Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 2 per bond pad, 0.0298" (756 µm) long each wire. Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739 µm) long each wire. Source:Total 4 wire (s), 2 per side, 0.0186" (472 µm) long each wire. Wire: 0.0007" (17.8 µm) Diameter, Gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE71300 TYPICAL SCATTERING PARAMETERS1 90˚ 1 .8 1.5 .6 2 .4 135˚ S11 26 GHz 4 5 S22 26 GHz .2 10 20 0 .2 .4 .6 .8 1 1.5 45˚ 3 2 3 4 5 10 20 -20 -10 S22 0.5 GHz S12 0.5 GHz S21 180˚ 0.5 GHz S11 0.5 GHz 0.05 S21 26 GHz 1.00 -5 -4 -.2 1.50 Coordinates in Ohms Frequency in GHz (VDS = 3 V, ID = 10 mA) -3 -.4 -2 -.6 -.8 0.15 0˚ S12 26 GHz 2.00 225˚ 315˚ 2.50 3.00 -1.5 -1 0.10 0.50 270˚ NE71300 VDS = 3 V, ID = 10 mA FREQUENCY S11 (GHz) MAG 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000 21.000 22.000 23.000 24.000 25.000 26.000 0.998 0.995 0.982 0.958 0.927 0.894 0.851 0.816 0.761 0.734 0.712 0.700 0.685 0.681 0.674 0.672 0.675 0.673 0.666 0.664 0.658 0.659 0.655 0.647 0.662 0.672 0.682 S21 ANG -7.5 -15.0 -29.8 -44.3 -58.7 -72.6 -86.4 -100.3 -113.3 -126.0 -139.3 -152.8 -166.4 -178.7 170.0 160.7 152.3 145.2 138.5 132.8 126.8 119.8 113.8 107.2 100.7 94.7 89.6 S12 S22 MAG ANG MAG ANG MAG 2.926 2.917 2.877 2.820 2.698 2.650 2.468 2.382 2.250 2.105 2.051 1.915 1.850 1.725 1.631 1.518 1.406 1.330 1.268 1.124 1.114 1.004 0.945 0.890 0.787 0.764 0.676 172.9 165.9 152.1 138.0 124.6 111.2 97.8 86.1 73.2 63.7 51.1 40.6 29.2 17.7 8.0 -2.7 -10.8 -20.3 -31.9 -37.3 -46.0 -52.7 -65.1 -72.3 -79.3 -88.1 -93.4 0.013 0.025 0.050 0.071 0.092 0.108 0.121 0.134 0.134 0.138 0.146 0.150 0.147 0.134 0.131 0.130 0.136 0.140 0.152 0.164 0.153 0.131 0.094 0.095 0.095 0.109 0.127 84.4 79.6 69.2 59.1 49.0 38.6 29.0 19.1 9.1 2.7 -4.4 -13.4 -23.4 -26.4 -30.6 -30.9 -36.1 -37.1 -40.0 -48.4 -62.9 -77.1 -73.3 -65.6 -57.4 -54.5 -54.8 0.637 0.635 0.628 0.616 0.598 0.576 0.541 0.507 0.463 0.434 0.406 0.378 0.350 0.329 0.321 0.321 0.329 0.344 0.360 0.379 0.388 0.389 0.386 0.387 0.398 0.420 0.454 K ANG -5.2 -10.3 -20.5 -30.1 -39.7 -49.2 -58.3 -67.5 -74.5 -82.6 -92.3 -103.5 -117.1 -130.2 -143.7 -156.0 -166.1 -175.4 176.2 168.5 159.5 149.4 140.2 129.8 119.5 109.0 99.4 MAG2 (dB) 0.050 0.068 0.130 0.212 0.287 0.363 0.464 0.527 0.698 0.762 0.796 0.843 0.913 1.037 1.110 1.176 1.179 1.182 1.138 1.167 1.290 1.692 2.566 2.724 2.936 2.479 2.231 23.523 20.670 17.600 15.990 14.673 13.898 13.096 12.498 12.251 11.834 11.476 11.061 10.999 9.915 8.932 8.135 7.584 7.193 6.953 5.886 5.392 3.993 3.095 2.509 1.626 1.691 1.004 Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 2 per bond pad, 0.0298" (756 µm) long each wire. Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739 µm) long each wire. Source:Total 4 wire (s), 2 per side, 0.0186" (472 µm) long each wire. Wire: 0.0007" (17.8 µm) Diameter, Gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE71300 TYPICAL SCATTERING PARAMETERS1 90˚ 1 .8 1.5 .6 2 .4 135˚ S11 26 GHz 4 5 S22 26 GHz .2 10 20 0 .2 .4 .6 .8 1 45˚ 3 1.5 2 3 4 5 10 20 -20 -10 S22 0.5 GHz 180˚ S11 0.5 GHz S12 0.5 GHz S21 0.5 GHz 0.05 S21 26 GHz Coordinates in Ohms Frequency in GHz (VDS = 3 V, ID = 30 mA) -3 -2 -.8 0˚ 1.00 2.00 -.4 -.6 0.15 S12 26 GHz -5 -4 -.2 0.10 225˚ 315˚ 3.00 -1.5 -1 270˚ NE71300 VDS = 3 V, ID = 30 mA FREQUENCY S11 (GHz) MAG 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000 21.000 22.000 23.000 24.000 25.000 26.000 0.998 0.993 0.976 0.946 0.909 0.870 0.821 0.783 0.725 0.702 0.687 0.685 0.680 0.683 0.679 0.677 0.675 0.670 0.662 0.658 0.655 0.663 0.661 0.658 0.675 0.686 0.698 S21 ANG -8.3 -16.5 -32.7 -48.2 -63.3 -77.7 -92.2 -106.9 -120.4 -133.6 -146.9 -159.8 -172.3 176.7 166.5 157.8 149.5 142.1 134.9 128.7 122.2 115.2 109.6 104.2 99.0 94.4 90.5 S12 S22 MAG ANG MAG ANG MAG 3.738 3.718 3.640 3.527 3.341 3.236 2.984 2.845 2.646 2.449 2.354 2.179 2.085 1.935 1.829 1.701 1.582 1.497 1.423 1.259 1.245 1.117 1.045 0.982 0.873 0.847 0.756 172.5 165.1 150.6 136.0 122.4 108.9 95.6 83.8 71.1 61.8 49.7 39.7 28.9 18.0 8.8 -1.5 -9.4 -18.7 -30.3 -35.4 -44.0 -50.3 -62.5 -69.4 -76.3 -85.0 -90.2 0.011 0.021 0.042 0.060 0.077 0.089 0.100 0.109 0.107 0.109 0.116 0.119 0.117 0.109 0.109 0.111 0.118 0.125 0.143 0.159 0.149 0.127 0.095 0.097 0.100 0.116 0.136 84.3 79.7 68.8 59.1 49.1 39.1 30.1 20.5 11.5 7.0 1.5 -6.1 -14.8 -15.5 -18.8 -18.0 -22.5 -22.5 -25.0 -35.1 -50.8 -65.2 -60.3 -53.5 -46.2 -44.4 -45.0 0.574 0.571 0.562 0.548 0.529 0.507 0.475 0.443 0.401 0.376 0.352 0.325 0.294 0.272 0.264 0.270 0.285 0.310 0.334 0.358 0.373 0.373 0.363 0.355 0.359 0.381 0.418 K ANG -5.3 -10.6 -21.0 -30.8 -40.6 -50.4 -59.5 -68.6 -74.3 -80.9 -89.4 -99.7 -113.5 -128.3 -143.9 -158.7 -169.7 -179.3 173.5 167.2 159.0 149.9 141.1 130.3 118.5 106.1 95.0 MAG2 (dB) 0.049 0.080 0.153 0.242 0.327 0.411 0.522 0.597 0.808 0.888 0.911 0.958 1.029 1.147 1.206 1.251 1.245 1.217 1.107 1.101 1.183 1.540 2.279 2.416 2.532 2.126 1.884 25.312 22.481 19.379 17.693 16.374 15.606 14.748 14.167 13.932 13.516 13.073 12.627 11.467 10.163 9.505 8.838 8.294 7.969 7.983 7.052 6.633 5.111 4.053 3.412 2.546 2.611 2.034 Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 2 per bond pad, 0.0298" (756 µm) long each wire. Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739 µm) long each wire. Source:Total 4 wire (s), 2 per side, 0.0186" (472 µm) long each wire. Wire: 0.0007" (17.8 µm) Diameter, Gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE71300 TYPICAL SCATTERING PARAMETERS1 NE71300 VDS = 4 V, ID = 10 mA FREQUENCY S11 (GHz) MAG 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000 21.000 22.000 23.000 24.000 25.000 26.000 0.998 0.994 0.981 0.958 0.927 0.894 0.851 0.816 0.761 0.735 0.711 0.700 0.685 0.681 0.674 0.672 0.675 0.673 0.666 0.665 0.659 0.661 0.657 0.649 0.664 0.673 0.684 S21 ANG -7.5 -14.9 -29.7 -44.1 -58.4 -72.2 -86.0 -99.9 -112.9 -125.6 -138.9 -152.3 -165.9 -178.2 170.5 161.2 152.7 145.5 138.8 133.1 127.0 120.0 114.1 107.4 100.9 94.8 89.6 S12 S22 MAG ANG MAG ANG MAG 2.874 2.866 2.828 2.774 2.654 2.610 2.432 2.348 2.223 2.078 2.030 1.895 1.834 1.716 1.621 1.512 1.402 1.328 1.269 1.120 1.111 0.999 0.943 0.886 0.782 0.760 0.669 172.9 165.9 152.1 138.0 124.6 111.3 97.8 86.1 73.2 63.6 51.1 40.4 29.1 17.5 7.8 -3.0 -11.3 -20.8 -32.5 -38.2 -46.8 -53.7 -66.3 -73.6 -80.9 -89.7 -95.0 0.012 0.024 0.048 0.069 0.089 0.105 0.118 0.130 0.130 0.133 0.141 0.144 0.141 0.129 0.126 0.126 0.131 0.134 0.146 0.158 0.148 0.128 0.093 0.093 0.093 0.108 0.126 83.7 79.5 69.4 59.1 49.2 38.8 29.1 19.4 9.2 2.9 -3.9 -12.9 -22.7 -25.5 -29.6 -29.8 -35.3 -35.7 -38.3 -46.6 -61.0 -75.2 -70.9 -63.5 -55.0 -52.3 -52.5 0.658 0.656 0.649 0.637 0.620 0.598 0.564 0.531 0.488 0.460 0.433 0.405 0.376 0.353 0.342 0.341 0.348 0.362 0.379 0.397 0.406 0.405 0.402 0.402 0.410 0.432 0.464 K ANG MAG2 (dB) -5.0 -10.0 -19.8 -29.2 -38.4 -47.7 -56.4 -65.3 -72.0 -79.8 -89.1 -99.7 -112.6 -124.9 -138.1 -150.0 -160.0 -169.7 -178.5 173.5 164.1 153.9 144.6 133.9 123.5 112.6 102.8 0.060 0.081 0.137 0.219 0.295 0.372 0.477 0.540 0.717 0.783 0.817 0.871 0.944 1.069 1.147 1.202 1.213 1.219 1.162 1.191 1.311 1.708 2.547 2.738 2.962 2.466 2.221 23.793 20.771 17.702 16.043 14.745 13.955 13.141 12.568 12.330 11.938 11.583 11.192 11.142 9.635 8.767 8.073 7.511 7.138 6.948 5.864 5.414 4.020 3.168 2.557 1.651 1.735 1.014 Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 2 per bond pad, 0.0298" (756 µm) long each wire. Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739 µm) long each wire. Source:Total 4 wire (s), 2 per side, 0.0186" (472 µm) long each wire. Wire: 0.0007" (17.8 µm) Diameter, Gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| OUTLINE DIMENSIONS (Units in µm) NE71300 (CHIP) (Units in µm) ORDERING INFORMATION 450 64 76 60 DRAIN GATE GATE 52 54 DRAIN 400 80 to 120 SOURCE 40 50 to 80 NE71300L SOURCE 118 NE71300M 122 20 to 50 67 NE71300N 123 20 to 120 (Standard) 120 NE71300 IDSS SELECTION (mA) 70 PART NUMBER 70 48 56 18 44 52 Note: All dimensions are typical unless otherwise stated. NE71300 NE71300(L) NONLINEAR MODEL SCHEMATIC LD DRAIN 0.36nH Q1 LG GATE 0.36nH LS 0.01nH SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 UNITS Parameter Units VTO -2.04 RG 6 time seconds VTOSC 0 RD 2 capacitance farads ALPHA 2.5 RS 2 inductance henries 0 resistance ohms BETA 0.03145 RGMET GAMMA 0.115 KF 0 voltage volts GAMMADC 0.06 AF 1 current amps 27 Q 1.7 TNOM DELTA 0.42 XTI 3 VBI 1 EG 1.43 IS 7.3e-12 VTOTC 0 N 1.2 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 6e-12 CDS 0.15e-12 RDB 2000 CBS 1e-9 CGSO 0.55e-12 CGDO 0.04e-12 DELTA1 0.3 DELTA2 0.2 FC 0.5 VBR Infinity (1) Series IV Libra TOM Model MODEL RANGE Frequency: 0.5 to 20 GHz Bias: VDS = 2 V to 4 V, ID = 10 mA to 30 mA Date: 2/10/97 NE71300 NE71300(N) NONLINEAR MODEL SCHEMATIC LD DRAIN 0.36nH Q1 LG GATE 0.36nH LS 0.02nH SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 UNITS Parameter Units VTO -1.04 RG 6 time seconds VTOSC 0 RD 2 capacitance farads ALPHA 4.5 RS 2 inductance henries BETA 0.0409 RGMET 0 resistance ohms GAMMA 0.082 KF 0 voltage volts GAMMADC 0.05 AF 1 current amps 27 Q 1.9 TNOM DELTA 0.42 XTI 3 VBI 1 EG 1.43 IS 7.3e-12 VTOTC 0 N 1.2 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 6e-12 CDS 0.15e-12 RDB 2000 CBS 1e-9 CGSO 0.5e-12 CGDO 0.04e-12 DELTA1 0.3 DELTA2 0.2 FC 0.5 VBR Infinity MODEL RANGE Frequency: 0.5 to 20 GHz Bias: VDS = 2 V to 4 V, ID = 10 mA to 30 mA Date: 2/10/97 (1) Series IV Libra TOM Model EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -9/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE