Preliminary Data Sheet NESG210719 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) <R> R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) <R> ORDERING INFORMATION Part Number NESG210719 NESG210719-T1 Order Number NESG210719-A Package Quantity Supplying Form 3-pin ultra super minimold 50 pcs • 8 mm wide embossed taping (19, 1608 PKG) (Pb-Free) (Non reel) • Pin 3 (Collector) face the perforation side NESG210719-T1-A 3 kpcs/reel of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. <R> ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13.0 V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V IC 100 mA 200 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 1 of 8 NESG210719 <R> ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 − − 100 nA Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 − − 100 nA 140 180 220 − Note 1 VCE = 1 V, IC = 5 mA Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 7 10 − GHz Gain Bandwidth Product (2) fT VCE = 1 V, IC = 20 mA, f = 2 GHz − 12 − GHz VCE = 1 V, IC = 5 mA, f = 2 GHz 6.5 8 − dB DC Current Gain hFE RF Characteristics Insertion Power Gain (1) ⏐S21e⏐ Insertion Power Gain (2) ⏐S21e⏐ VCE = 1 V, IC = 20 mA, f = 2 GHz − 9 − dB Noise Figure NF VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt − 0.9 1.5 dB Associated Gain Ga VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt 6 9 − dB VCB = 1 V, IE = 0, f = 1 MHz − 0.5 0.7 pF 2 2 Reverse Transfer Capacitance Cre Note 2 Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded <R> hFE CLASSIFICATION Rank FB/YFB Marking D7 hFE Value 140 to 220 R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 2 of 8 NESG210719 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 300 Mounted on glass epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 250 200 mW 200 150 100 50 25 0 50 75 100 125 0.7 f = 1 MHz 0.6 0.5 0.4 0.3 0.2 0.1 0 150 4 6 8 10 12 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 100 VCE = 2 V VCE = 1 V Collector Current IC (mA) 10 Collector Current IC (mA) 2 1 0.1 0.01 10 1 0.1 0.01 0.001 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) 100 800 μA 720 μA 640 μA 80 560 μA 480 μA 60 400 μA 320 μA 40 240 μA 160 μA 20 IB = 80 μ A 0 1 2 3 4 5 6 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 3 of 8 NESG210719 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 VCE = 2 V DC Current Gain hFE DC Current Gain hFE VCE = 1 V 100 10 0.1 1 10 100 10 0.1 100 1 10 100 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 DC Current Gain hFE VCE = 3 V 100 10 0.1 1 10 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 18 20 VCE = 1 V f = 2 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 20 16 14 12 10 8 6 4 2 0 1 10 100 Collector Current IC (mA) 18 VCE = 2 V f = 2 GHz 16 14 12 10 8 6 4 2 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 4 of 8 NESG210719 VCE = 1 V IC = 5 mA 30 25 20 MSG MAG 15 MAG MSG 10 |S21e|2 5 0 0.1 1 10 100 30 25 MSG 20 MAG 15 10 |S21e|2 MAG MSG 5 0 0.1 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 2 V IC = 5 mA 25 MSG MAG 15 MAG MSG 10 0 0.1 VCE = 1 V IC = 20 mA Frequency f (GHz) 30 5 35 Frequency f (GHz) 35 20 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY |S21e|2 1 10 100 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 VCE = 2 V IC = 20 mA 30 25 MSG 20 MAG 15 MAG 10 |S21e|2 MSG 5 0 0.1 1 10 100 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 5 of 8 NESG210719 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 1 V f = 1 GHz MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 15 VCE = 1 V f = 2 GHz MSG MAG 10 |S21e|2 5 0 −5 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 10 VCE = 1 V f = 4 GHz MAG 5 |S21e|2 0 −5 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 20 VCE = 2 V f = 1 GHz MSG MAG 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 20 VCE = 2 V f = 2 GHz 15 MSG MAG 10 |S21e|2 5 0 1 Insertion Power Gain |S21e| (dB) Maximum Available Power Gain MAG (dB) Collector Current IC (mA) 2 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 10 100 Collector Current IC (mA) 10 VCE = 2 V f = 4 GHz MAG 5 |S21e|2 0 −5 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 6 of 8 NESG210719 <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 7 of 8 NESG210719 PACKAGE DIMENSIONS 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm) 0.2+0.1 –0 1.6±0.1 0.8±0.1 3 0.3+0.1 –0 0.5 1.0 0.5 D7 1.6±0.1 2 0.15+0.1 –0.05 0 to 0.1 0.6 0.75±0.05 1 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 Page 8 of 8 Revision History NESG210719 Data Sheet Description Rev. Date Page Summary 0.01 Oct 15, 2003 – Preliminary edition issued 1.00 Oct 13, 2004 – First edition issued 2.00 Aug 23, 2005 – Second edition issued 3.00 Jan 21, 2008 – Third edition issued 4.00 Sep 24, 2012 Throughout The company name is changed to Renesas Electronics Corporation. p.1 Modification of FEATURES p.1 Modification of ORDERING INFORMATION p.1 Modification of ABSOLUTE MAXIMUM RATINGS p.2 Modification of ELECTRICAL CHARACTERISTICS p.2 Modification of hFE CLASSIFICATION p.7 Modification of method for obtaining S-parameters All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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