ETC NGA-489

Product Description
Stanford Microdevices’ NGA-489 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 10 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 65mA , the NGA-489 typically provides +38.0 dBm output
IP3, 14.8 dB of gain, and +17.2 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
(from de-imbedded S-parameters)
-6
-12
11
IRL
-18
9
-24
ORL
7
5
0
1
2
3
4
5
6
7
Frequency (GHz)
Sy mbol
G
8
9
Return Loss (dB)
Gain (dB)
0
GAIN
13
0.5-10 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• High Gain : 14.5 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented InGaP Technology
Gain & Return Loss vs. Freq. @T L=+25°C
15
NGA-489
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
-30
• Cellular, PCS, CDPD
-36
• Wireless Data, SONET
10
Parameter
Small Signal Gain
• Satellite
Units
Frequency
Min.
Ty p.
Max.
dB
dB
dB
850 M Hz
1950 M Hz
2400 M Hz
13.5
14.8
14.5
14.2
16.0
P1dB
Output Pow er at 1dB Compression
dBm
dBm
850 M Hz
1950 M Hz
17.2
17.0
OIP3
Output Third Order Intercept Point
dBm
dBm
850 M Hz
1950 M Hz
38.0
37.0
Bandw idth Determined by Return Loss (<-10dB)
IRL
M Hz
10000
Input Return Loss
dB
1950 M Hz
19.7
Output Return Loss
dB
1950 M Hz
27.0
NF
Noise Figure
dB
1950 M Hz
4.2
VD
Device Voltage
V
RTh
Thermal Resistance
ORL
Test Conditions:
VS = 8 V
RBIAS = 62 Ohms
°C/W
ID = 65 mA Typ.
TL = 25ºC
3.6
4.0
4.4
145
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-100375 Rev C
Preliminary
NGA-489 0.5-10 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Sy mbol
Unit
500
850
1950
2400
3500
dB
14.6
14.8
14.5
14.4
14.2
Output Third Order Intercept Point
dBm
37.6
38.0
37.0
34.9
31.7
P1dB
Output Pow er at 1dB Compression
dBm
17.2
17.2
17.0
16.7
15.8
IRL
Input Return Loss
dB
26.0
24.0
19.7
18.0
17.0
ORL
Output Return Loss
dB
33.0
32.0
27.0
26.0
27.0
G
Parameter
Small Signal Gain
OIP3
S12
Reverse Isolation
dB
18.3
18.3
18.6
18.7
19.0
NF
Noise Figure
dB
4.3
4.3
4.2
4.2
4.4
VS = 8 V
RBIAS = 62 Ohms
Test Conditions:
ID = 65 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
Noise Figure vs. Frequency
Noise Figure (dB)
Absolute Maximum Ratings
VD= 4.0 V, ID= 65 mA
7
6
Parameter
Absolute Limit
Max. Device Current (ID)
100 mA
Max. Device Voltage (VD)
6V
5
Max. RF Input Pow er
+15 dBm
Max. Junction Temp. (TJ)
+150°C
4
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
TL=+25ºC
3
Operation of this device beyond any one of these limits may
cause permanent damage.
2
0
1
2
3
4
Frequency (GHz)
5
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/Rth
6
OIP3 vs. Frequency
P1dB vs. Frequency
VD= 4.0 V, ID= 65 mA
VD= 4.0 V, ID= 65 mA
45
TL
+25°C
-40°C
+85°C
TL
18
P1dB(dBm)
OIP3 (dBm)
40
20
35
30
+25°C
-40°C
+85°C
16
14
12
25
10
20
0
1
2
3
4
Frequency (GHz)
726 Palomar Ave., Sunnyvale, CA 94085
5
6
Phone: (800) SMI-MMIC
2
0
1
2
3
4
Frequency (GHz)
5
6
http://www.stanfordmicro.com
EDS-100375 Rev C
Preliminary
NGA-489 0.5-10 GHz Cascadable MMIC Amplifier
S21 vs. Frequency
TL
18
VD= 4.0 V, ID= 65 mA
-10
+25°C
-40°C
+85°C
-15
S11 (dB)
20
S21 (dB)
S11 vs. Frequency
VD= 4.0 V, ID= 65 mA
16
14
12
-20
-30
10
-35
0
1
2
3
4
Frequency (GHz)
5
0
6
1
S12 vs. Frequency
TL
-20
-19
S22 (dB)
S12 (dB)
5
6
5
6
VD= 4.0 V, ID= 65 mA
-15
+25°C
-40°C
+85°C
TL
-17
2
3
4
Frequency (GHz)
S22 vs. Frequency
VD= 4.0 V, ID= 65 mA
-15
-21
-23
+25°C
-40°C
+85°C
-25
-30
-35
-25
-40
0
1
2
3
4
Frequency (GHz)
5
6
0
VD vs. ID over Temperature for fixed
VS= 8 V, RBIAS= 62 ohms *
75
4.35
+25°C
65
-40°C
60
VD (Volts)
80
+85°C
1
2
3
4
Frequency (GHz)
VD vs. Temperature for Constant ID = 65 mA
4.50
70
ID (mA)
+25°C
-40°C
+85°C
TL
-25
4.20
4.05
3.90
3.75
55
50
3.8
3.60
3.9
4
4.1
4.2
-40
VD (Volts)
-15
10
35
Temperature (°C)
60
85
* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-100375 Rev C
Preliminary
NGA-489 0.5-10 GHz Cascadable MMIC Amplifier
NGA-489 Basic Application Circuit
Application Circuit Element Values
R BIAS
VS
1 uF
1000
pF
500
850
1950
2400
3500
CB
220 pF
100 pF
68 pF
56 pF
39 pF
CD
100 pF
68 pF
22 pF
22 pF
15 pF
LC
68 nH
33 nH
22 nH
18 nH
15 nH
CD
LC
1
RF in
4
NGA-489
3
RF out
CB
2
CB
Frequency (Mhz)
Reference
Designator
Recommended Bias Resistor Values for ID=65mA
Supply Voltage (VS)
6V
RBIAS
30
62
10 V
91
12 V
120
Note: RBIAS provides DC bias stability over temperature.
VS
1 uF
RBIAS
N4
8V
LC
1000 pF
CD
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
CB
CB
Mounting Instructions
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Part Identification Marking
The part will be marked with an “N4” designator on the
top surface of the package.
Pin #
Function
1
RF IN
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
4
2
GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
N4
3
For package dimensions, refer to outline drawing at
www.stanfordmicro.com
Caution: ESD sensitive
4
GND
Sames as Pin 2
Part Number Ordering Information
Appropriate precautions in handling, packaging
and testing devices must be observed.
726 Palomar Ave., Sunnyvale, CA 94085
RF OUT/ RF output and bias pin. DC voltage is
BIAS
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
3
3
2
2
1
1
Description
Part Number
Reel Size
Devices/Reel
NGA-489
7"
1000
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-100375 Rev C