Databook.fxp 1/13/99 2:09 PM Page F-18 F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D Devices in this Databook based on the NJ32 Process. S-D Datasheet 2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N4222A G Die Size = 0.018" X 0.018" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ32 Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 25 – 50 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 pA VGS = – 15V, VDS = ØV 1 22 mA VDS = 15V, VGS = ØV – 0.5 –6 V VDS = 15V, ID = 1 nA mS VDS = 15V, VGS = ØV f = 1 kHz – 10 Dynamic Electrical Characteristics Forward Transconductance gfs 4 Input Capacitance Ciss 6 7.0 pF VDS = 15V, VGS = ØV f = 1 MHz Feedback Capacitance Crss 1.3 3 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Noise Voltage e¯ N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 7 nV/√HZ VDS = 10V, ID = 5 mA f = 1 kHz www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-19 F-19 01/99 NJ32 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.2 V 10 6 Transconductance in mS Drain Current in mA VGS = Ø V 8 VGS = – 0.5 V 6 VGS = –1.0 V 4 VGS = –1.5 V 2 VGS = –2.0 V 5 10 15 3 2 1 0 –2 –4 –6 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Current as a Function of VGS 20 –8 24 VD = 15 V 15 10 5 0 –1 –2 –3 –4 20 IDSS = 24 mA IDSS = 18 mA IDSS = 14 mA IDSS = 10 mA IDSS = 7 mA 16 12 8 4 –5 0 –2 –4 –6 –8 Gate Source Cutoff Voltage in Volts Gate Source Voltage in Volts Input Capacitance vs. Gate Source Voltage Feedback Capacitance vs. Gate Source Voltage 10 Feedback Capacitance in pF 10 Input Capacitance in pF 4 20 Drain Current in mA Drain Saturation Current in mA 0 5 8 VDS = Ø V 6 VDS = 5 V VDS = 10 V 4 2 0 –4 –8 – 12 Gate Source Voltage in Volts – 16 8 6 VDS = Ø V 4 VDS = 5 V 2 VDS = 10 V 0 –4 –8 – 12 Gate Source Voltage in Volts – 16 Databook.fxp 1/13/99 2:09 PM Page F-20 F-20 01/99 PJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D Devices in this Databook based on the PJ32 Process. S-D Datasheet 2N5020, 2N5021 2N5460, 2N5461 2N5462 G Die Size = 0.018" X 0.018" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: PJ32 Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ 30 50 Max Unit Test Conditions V IG = 1 µA, VDS = Ø 2 nA VGS = 15V, VDS = Ø –1 – 15 mA VDS = – 15V, VGS = Ø 0.5 7 V VDS = – 15V, ID = 1 nA 1 Dynamic Electrical Characteristics Forward Transconductance gfs 2.5 mS VDS = – 15V, VGS = Ø f = 1 kHz Input Capacitance Ciss 3.2 pF VDS = Ø, VGS = 10 f = 1 MHz Feedback Capacitance Crss 1.7 pF VDS = Ø, VGS = 10 f = 1 MHz Equivalent Noise Voltage e¯ N 10 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 nV/√HZ VDS = 10V, VGS = Ø f = 1 Hz www.interfet.com