INTERFET NJ450L

Databook.fxp 1/13/99 2:09 PM Page F-38
F-38
01/99
NJ450L Process
Silicon Junction Field-Effect Transistor
¥ Low-Current
¥ Low Gate Leakage Current
¥ High Input Impedance
G
S-D
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
Devices in this Databook based on the NJ450L Process.
S-D
G
Datasheet
2N6550
IF4500
IF4501
IFN860
Die Size = 0.028" X 0.028"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
NJ450L Process
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Reverse Gate Leakage Current
IGSS
Drain Saturation Current (Pulsed)
IDSS
Gate Source Cutoff Voltage
VGS(OFF)
Min
Typ
Max
– 25
– 25
V
IG = – 1 µA, VDS = ØV
– 50
pA
VGS = – 15V, VDS = ØV
mA
VDS = 15V, VGS = ØV
V
VDS = 15V, ID = 1 nA
5
– 0.1
–4
Unit
Test Conditions
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
gfs
100
mS
VDS = 15V, VGS = ØV
f = 1 kHz
Input Capacitance
Ciss
35
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Feedback Capacitance
Crss
10
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Equivalent Noise Voltage
e¯ N
0.9
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
nV/√HZ VDG = 4V, ID = 5 mA
f = 1 kHz
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page F-39
F-39
01/99
NJ450L Process
Silicon Junction Field-Effect Transistor
Drain Current as a Function of VDS
Gfs as a Function of VGS(OFF)
VGS(OFF) = Ð2.2 V
150
150
Transconductance in mS
Drain Current in mA
VGS = Ø V
125
VGS = – 0.5 V
100
VGS = –1.0 V
75
VGS = –1.5 V
50
VGS = –2.0 V
5
10
15
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of VGS(OFF)
Gfs as a Function of IDSS
500
– 3.0
120
400
300
200
100
0
–1
–2
–3
–4
–5
100
80
60
40
20
–6
0
50
100
150
200
250
Drain Source Cutoff Voltage in Volts
Drain Saturation Current in mA
Noise as a Function of Frequency
Capacitance as a Function of VGS
4.0
300
100
VDS = Ø
IDSS = 35 mA
VDG = 4 V
ID = 5 mA
3.0
Capacitance in pF
Noise Voltage in nV/√Hz
50
20
Transconductance in mS
Drain Saturation Current in mA
0
100
2.0
1.0
80
60
40
Ciss
20
Crss
10
100
1K
Frequency in Hz
10K
100K
0
–4
–8
– 12
Gate Source Voltage in Volts
– 16