2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–0.07A –1.0max V Tj 150 °C fT VCE=–12V, IE=0.2A 20typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 60typ pF Tstg ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 10.1±0.2 0.8±0.2 ICBO V Unit ±0.2 V –200 Conditions Symbol External Dimensions FM20 (TO220F) 3.9 –150 Unit (Ta=25°C) Ratings 2SA1667 2SA1668 8.4±0.2 VCEO ■Electrical Characteristics 16.9±0.3 Ratings Symbol 2SA1667 2SA1668 VCBO –150 –200 13.0min ■Absolute maximum ratings (Ta=25°C) Application : TV Vertical Output, Audio Output Driver and General Purpose 1.35±0.15 1.35±0.15 ■Typical Switching Characteristics (Common Emitter) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 –100 –0.4 0 –2 –4 –6 –8 –1 –10 –100 (V C E =–10V) 400 100 –0.1 –1 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 25˚C –30˚C 100 30 –0.01 –2 Collector Current I C (A) –0.1 –1 –2 0.5 1 2 Temp) at 0x he si nk –100 1 00x 1 0 10 ite –10 Collector-Emitter Voltage V C E (V) 150x150x2 fin 1 In Without Heatsink Natural Cooling 1.2SA1667 2.2SA1668 20 ith M aximu m Power Dissipat io n P C (W) C W Collector Curr ent I C (A) s 2 Natural Cooling Silicone Grease Heatsink: Aluminum in mm s ms 1 –0.01 –1 1000 P c – T a Derating –0.1 10 –1.2 100 1m 20 5m D –1 20 ) 10 25 40 –1.0 Time t(ms) –5 30 –0.8 1 Safe Operating Area (Single Pulse) Typ –0.6 5 (V C E =–12V) 0.1 –0.4 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off Fr equ ency f T (M H Z ) D C Cur r ent Gai n h F E 125˚C Emitter Current I E (A) –0.2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 400 50 0 Base-Emittor Voltage V B E (V) (V C E =–10V) 0 0.01 0 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 40 –0.01 –0.8 –0.4 I C =–2A –2 –1.2 –1A –0 .5A Collector-Emitter Voltage V C E (V) –1.6 (Case –2 0 –10 –2 –30˚C I B =–5mA/Step (V C E =–10V) –3 Temp –1.2 I C – V BE Temperature Characteristics (Typical) mp) Collector Current I C (A) –1.6 0 0.5typ (Case A –0.8 1.5typ B C E e Te Collector-Emitter Saturation Voltage V C E (s at) (V ) –2.0 –5 0.4typ Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) V CE ( sa t ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 0m 100 tstg (µs) (Cas 5 –10 ton (µs) IB2 (mA) 25˚C –1 20 IB1 (mA) 125˚C –20 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) RL (Ω) θ j- a (˚C /W ) VCC (V) 50x50x2 Without Heatsink 2 2 –300 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 25