SANKEN 2SA1494

2SA1494
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858)
■Electrical Characteristics
ICBO
2SA1494
Unit
VCB=–200V
–100max
µA
36.4±0.3
24.4±0.2
VEB=–6V
–100max
µA
IC=–50mA
–200min
V
VCEO
–200
V
IEBO
VEBO
–6
V
V(BR)CEO
IC
–17
A
hFE
VCE=–4V, IC=–8A
50min∗
IB
–5
A
VCE(sat)
IC=–10A, IB=–1A
–2.5max
V
PC
200(Tc=25°C)
W
fT
VCE=–12V, IE=1A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
–55 to +150
°C
∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)
2-ø3.2±0.1
7
a
b
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–40
4
–10
–10
5
–1
1
0.6typ
0.9typ
0.2typ
–50mA
–5
I B =–20mA
0
0
–1
–2
–3
–4
–1
–10A
0
0
–1
–2
(V C E =–4V)
50
–5
25˚C
100
–30˚C
50
20
–0.02
–10 –17
–0.1
–0.5
f T – I E Characteristics (Typical)
–5
–10 –17
10
3m
s
10ms
–100
Collector-Emitter Voltage V C E (V)
–300
nk
–10
si
–2
at
–0.1
10
he
Without Heatsink
Natural Cooling
120
ite
–1
fin
–5
160
In
Collector Curr ent I C (A)
C
ith
D
W
–10
–0.5
1000
s
Ma xim um Powe r Dissipat io n P C (W)
m
s
10
100
P c – T a Derating
0m
20
Emitter Current I E (A)
1
Time t(ms)
10
Typ
1
0.1
200
20
0.1
0.5
–50
30
Cut- off Fr equ ency f T (MH Z )
–1
1
Safe Operating Area (Single Pulse)
(V C E =–12V)
–2
2
Collector Current I C (A)
Collector Current I C (A)
22
Transient Thermal Resistance
DC Curr ent Gain h FE
DC Curr ent Gain h FE
Typ
100
0
0.02
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
125˚C
–1
0
Base-Emittor Voltage V B E (V)
200
–0.5
0
–3
(V C E =–4V)
300
)
–5A
Base Current I B (A)
h FE – I C Characteristics (Typical)
–0.1
–5
I C =–15A
Collector-Emitter Voltage V C E (V)
10
–0.02
–10
Temp
–1 00 m A
–2
e Te
mp)
Temp
)
A
Weight : Approx 18.4g
a. Type No.
b. Lot No.
–15
(Cas
–200m
–10
E
(V C E =–4V)
125˚C
0mA
Collector Current I C (A)
Collector Current I C (A)
–40
C
–17
θ j - a (˚C /W)
0
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
.5
–60
–1
–15
mA
3.0 +0.3
-0.1
I C – V BE Temperature Characteristics (Typical)
V CE ( sat ) – I B Characteristics (Typical)
–3
–1A
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
–17
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
9
21.4±0.3
20.0min
Tstg
6.0±0.2
2.1
(Case
V
External Dimensions MT-200
(Ta=25°C)
Conditions
–30˚C
–200
VCBO
Symbol
(Case
Unit
25˚C
2SA1494
4.0max
■Absolute maximum ratings (Ta=25°C)
Symbol
Application : Audio and General Purpose
80
40
5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150
2000