2SA1567 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064) A hFE µA –50min V VCE=–1V, IC=–6A 50min IC=–6A, IB=–0.3A –0.35max V –3 A VCE(sat) PC 35(Tc=25°C) W fT VCE=–12V, IE=0.5A 40typ MHz 150 °C COB VCB=–10V, f=1MHz 330typ pF –55 to +150 °C Tstg 13.0min IB Tj 1.35±0.15 1.35±0.15 5 0 –1 –2 –3 –4 –5 –0.5 0 –6 –10 –2 –100 –1000 (V C E =–1V) 500 125˚C D C Cur r ent Gai n h F E Typ 100 50 25˚C –30˚C 100 50 30 –0.02 –10 –0.1 f T – I E Characteristics (Typical) –1 –10 –0.4 0.3 1 10 s 1000 fin ite he 150x150x2 at si nk Without Heatsink Natural Cooling 20 In –0.5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30 ith –1 –0.05 –3 100 W Collector Cur rent I C (A) s 0m m DC –5 s –0.1 12 –1.2 P c – T a Derating 10 10 Typ 20 –1.0 Time t(ms) Maximu m Power Dissi pation P C (W) 1m 30 –0.8 0.5 –30 40 –0.6 35 –10 Cut- off Fr equ ency f T (M H Z ) p) 1 Safe Operating Area (Single Pulse) 50 Emitter Current I E (A) Tem 4 (V C E =–12V) 1 –0.2 Collector Current I C (A) Collector Current I C (A) 0 0.05 0.1 0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 500 DC Curr ent Gain h F E 0 –3000 Base-Emittor Voltage V B E (V) (V C E =–1V) –1 –4 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.1 –6 –2 Collector-Emitter Voltage V C E (V) 30 –0.02 –8 se 12A 0 –5mA –9A –10mA –2 –1.0 –6A –20mA –10 –3A –4 (V C E =–1V) –12 –1.5 –1A –40mA I C – V BE Temperature Characteristics (Typical) I C= – –60mA –6 0.2typ (Ca –2 –10 0m A –8 0.4typ ˚C A I B= –10 Collector Current I C (A) 0m Collector-Emitter Saturation Voltage V C E (s a t) (V ) mA 00 –15 0.4typ V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –12 120 –120 Weight : Approx 2.0g a. Part No. b. Lot No. B C E 125 –10 tf (µs) Collector Current I C (A) –6 4 tstg (µs) θ j- a (˚ C/W) –24 ton (µs) IB2 (mA) IB1 (mA) VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 Transient Thermal Resistance IC (A) RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b mp) –12 –100max 4.2±0.2 2.8 c0.5 e Te IC VEB=–6V IC=–25mA 10.1±0.2 (Cas V(BR)CEO µA 4.0±0.2 IEBO V –100max 0.8±0.2 V –6 VCB=–50V 3.9 –50 VEBO Conditions mp) VCEO Symbol –30˚C ICBO e Te V (Cas –50 Unit 25˚C Unit VCBO Symbol External Dimensions FM20 (TO220F) (Ta=25°C) Ratings ±0.2 ■Electrical Characteristics Ratings 8.4±0.2 ■Absolute maximum ratings (Ta=25°C) Application : DC Motor Driver, Chopper Regulator and General Purpose 16.9±0.3 LOW VCE (sat) 100x100x2 10 50x50x2 Without Heatsink –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 23