Ordering number:ENN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions · Color TV sound output, converter, inverter. unit:mm 2064A Features [2SA1768/2SC4612] · Adoption of MBIT process. · High breakdown voltage, large current capacity. · Fast switching speed. 2.5 1.45 1.0 1.0 1.0 4.5 6.9 4.0 1.0 0.6 0.5 0.9 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base SANYO : NMP ( ) : 2SA1768 2.54 Specifications 2.54 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO IC (–)6 V (–)0.7 mA Collector Current (Pulse) ICP (–)1.5 mA Collector Dissipation PC 1 W Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Collector Current V Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)120V, IE=0 –0.1 μA Emitter Cutoff Current IEBO –0.1 μA DC Current Gain hFE1 hFE2 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA Gain-Bandwidth Product fT Cob Output Capacitance VCE=(–)5V, IC=(–)10mA 100* 90 VCE=(–)10V, IC=–50mA 120 VCB=(–)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=250mA, IB=(–)25mA Base-to-Emitter Saturation Voltage VBE(sat) IC=250mA, IB=(–)25mA 400* MHz (11)8 pF (–0.2) (–0.5) V 0.12 0.4 V (–)0.85 (–)1.2 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 90503TN (KT)/83098HA (KT)/5110MO, TS No.3582-1/5 2SA1768/2SC4612 Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Ratings Conditions min V(BR)CBO IC=10μA, IE=0 V(BR)CBO IC=1mA, RBE=∞ Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Unit max (–)180 V (–)160 V IE=10μA, IC=0 6 Turn-ON Time V(BR)EBO ton Storage Time tstg See specified Test Circuit tf See specified Test Circuit Fall Time typ V See specified Test Circuit (60)50 ns (900) ns 1000 ns (60)60 ns * : The 2SA1768/2SC4612 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% RB OUTPUT INPUT VR IB2 50Ω 333Ω + 470μF + 100μF --5V 100V 20IB1= --20IB2= IC=300mA (For PNP, the polarity is reversed.) IC -- VCE --800 From top --200mA --180mA --160mA --140mA --600 A --120m A --100m --80mA --60mA --500 --40mA --400 --20mA --300 From top 100mA 90mA 80mA 70mA 60mA 700 Collector Current, IC – mA Collector Current, IC – mA --700 IC -- VCE 800 2SA1768 --200 --100 600 40mA 30mA 500 20mA 400 10mA 300 200 100 IB=0 0 0 --200 --400 --600 --800 IB=0 0 0 --1000 Collector-to-Emitter Voltage, VCE –mV ITR04536 --500 --400 Collector Current, IC – mA A m --5 .0 --600 mA --4.5 mA --4.0 mA --3.5 mA --3.0 --2.5mA --2.0mA --300 --1.5mA --1.0mA --200 --0.5mA --100 0 --10 --20 --30 --40 --50 600 800 1000 IC -- VCE 2SC4612 800 mA 3.5 A 0m 3.0m 4. A 2.5m A 600 2.0mA 400 1.5mA 1.0mA 200 0.5mA IB=0 0 400 1000 2SA1768 --700 200 Collector-to-Emitter Voltage, VCE –mV ITR04537 IC -- VCE --800 Collector Current, IC – mA 2SC4612 50mA --60 --70 Collector-to-Emitter Voltage, VCE – V --80 ITR04538 IB=0 0 0 10 20 30 40 50 60 Collector-to-Emitter Voltage, VCE – V 70 80 ITR04539 No.3582-2/5 2SA1768/2SC4612 IC -- VBE --1000 IC -- VBE 1000 --400 0 600 400 200 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V --1.2 0 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE – V 2SC4612 VCE=5V Ta=75°C 3 2 2 DC Current Gain, hFE --25°C 25°C 100 7 5 3 2 --25°C 100 5 3 2 10 7 7 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC – mA 5 1.0 5 7--1000 ITR04542 2 3 5 7 10 2 3 5 7 100 2 VCE=--10V --5V 100 2SC4612 Gain-Bandwidth Product, fT – MHz Gain-Bandwidth Product, fT – MHz 2 7 5 3 2 5 7 1000 ITR04543 f T -- IC 5 2SA1768 3 3 Collector Current, IC – mA f T -- IC 5 25°C 7 10 5 --1.0 10 3 2 =10V VCE 5V 100 7 5 3 2 10 7 --10 2 3 5 7 --100 2 3 5 7 --1000 ITR04544 Collector Current, IC – mA --1000 7 5 3 2 °C 25 7 Ta=75°C 5 --25°C 3 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC – mA 2 10 2 3 5 7--1000 ITR04546 3 5 7 100 2 3 5 7 1000 ITR04545 VCE(sat) -- IC 1000 2SA1768 IC / IB=10 --100 7 Collector Current, IC – mA VCE(sat) -- IC 2 2 --1.0 5 2SC4612 IC / IB=10 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 5 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 1.2 ITR04541 hFE -- IC 5 2SA1768 VCE=--5V Ta=75°C 3 0.2 ITR04540 hFE -- IC 5 DC Current Gain, hFE 800 Ta=7 5°C 25°C --25°C --600 --200 2SC4612 VCE=5V Collector Current, IC – mA --800 Ta= 75° 25°C C --25°C Collector Current, IC – mA 2SA1768 VCE=--5V 5 3 2 100 °C 25 7 Ta=75°C 5 C --25° 3 2 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC – mA 2 3 5 7 1000 ITR04547 No.3582-3/5 2SA1768/2SC4612 VBE(sat) -- IC --10 5 3 2 Ta=--25°C 7 75°C 5 25°C 3 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC – mA 3 2 2SA 176 8 10 2SC 461 7 2 5 3 2 1.0 1.0 1.0 2 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- 7 100 2 V ITR04550 PC -- Ta 1.2 75°C 5 25°C 3 1.0 7 5 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 ITR04549 ASO 2SA1768 / 2SC4612 ICP=1.5A 10 IC=0.7A 10 0m 3 2 DC 0.1 7 5 m 1m s s s op era tio n 3 2 0.01 7 5 2 Ta=--25°C 7 3 2 Collector Current, IC – A Output Capacitance, Cob -- pF 5 3 Collector Current, IC – mA 2SA1768 / 2SC4612 f=1MHz For PNP, minus sign is omitted. 7 5 2 1.0 5 7--1000 ITR04548 Cob -- VCB 100 Collector Dissipation, PC – mW 3 2SC4612 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE (sat) –V Base-to-Emitter Saturation Voltage, VBE (sat) –V 7 --1.0 VBE(sat) -- IC 10 2SA1768 IC / IB=10 Ta=25°C Single pulse For PNP, minus sign is omitted. 3 1.0 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE – V 2 3 ITR04551 2SA1768 / 2SC4612 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 ITR04552 No.3582-4/5 2SA1768/2SC4612 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2003. Specifications and information herein are subject to change without notice. PS No.3582-5/5