NTE318 Silicon NPN Transistor RF Power Output Description: The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions. Features: D Designed for HF military and commercial equipment 40W minimum with greater than 10.0dB gain D Withstands severe mismatch under operating conditions D Low inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Device Dissipation (+25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Breakdown Voltage V(BR)CEO IC = 200mA, IB = 0, Note 1 18 – – V Collector–Emitter Breakdown Voltage V(BR)CES IC = 200mA, VBE = 0, Note 1 36 – – V Emitter–Base Breakdown Voltage 4 – – V mA V(BR)EBO IE = 2.5mA, IC = 0 Collector Cut–Off Current ICBO VCB = 15V, IE = 0 – – 1 DC Current Gain hFE VCE = 5V, IC = 250mA 10 – – Gain Bandwidth ft VCE = 13.5V, IC = 100mA 200 – – MHz Output Capacitance Cob VCB = 12.5V, IC = 0, –FO = 1.0MHz – – 200 pF Amplifier Power Out PO 28MHz/12.5V 47 – – W Amplifier Power Gain Pg 10 – – dB Note 1. Pulsed through 25mH Inductor .725 (18.42) .127 (3.17) Dia (2 Holes) E C B E .250 (6.35) .225 (5.72) 1.061 (26.95) Ceramic Cap .480 (12.1) Dia .260 (6.6) .065 (1.68) .975 (24.77) .095 (2.42)