NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited for line operated switchmode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers D Motor Controls D Deflection Circuits Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Power Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +275°C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 500 – – V OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 Collector Cutoff Current Emitter Cutoff Current ICEV VCEV = 800V, VEB(off) = 1.5V – – 0.25 mA ICER VCE = 800V, RBE = 50Ω, TC = +100°C – – 5.0 mA IEBO VBE = 6V, IC = 0 – – 1.0 mA hFE VCE = 5V, IC = 5A 10 – 60 VCE(sat) IC = 10A, IB = 2A – – 1.8 V IC = 20A, IB = 6.7A – – 5.0 V IC = 10A, IB = 2A – – 1.8 V 125 – 500 pF – 0.02 0.1 µs – 0.3 0.7 µs ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VBE(sat) Dynamic Characteristics Output Capacitance Ccb VCB = 10V, IE = 0, ftest = 1kHz Switching Characteristics (Resistive Load) Dealy Time td Rise Time tr Storage Time ts – 1.6 4.0 µs Fall Time tf – 0.3 0.7 µs VCC = 250V, IC = 10A, IB1 = 2A, VBE(off) = 5V, tp = 10µs, Duty Cycle ≤ 2% Note 2. Pulse Test: Pulse Width = 300ms, Duty Cycle ≤ 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case