NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC−70−6 • Gate Diodes for ESD Protection • Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) Typ ID Max 47 mW @ −4.5 V −20 V −4.2 A 70 mW @ −2.5 V 180 mW @ −1.8 V Applications • High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs SC−88 (SOT−363) D 1 6 D D 2 5 D G 3 4 S MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V ID −3.3 A Continuous Drain Current (Note 1) Steady State TA = 25 °C TA = 85 °C −2.4 t≤5s TA = 25 °C −4.2 Steady State TA = 25 °C PD 1.0 W tp = 10 ms IDM −10 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −1.3 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C ESD 4000 V Symbol Max Unit Junction−to−Ambient – Steady State RqJA 125 °C/W Junction−to−Ambient − t ≤ 5 s RqJA 75 Junction−to−Lead – Steady State RqJL 45 Power Dissipation (Note 1) Pulsed Drain Current Operating Junction and Storage Temperature ESD Human Body Model (HBM) Top View THERMAL RESISTANCE RATINGS (Note 1) Parameter February, 2006 − Rev. 1 D D S 6 1 TY M G G SC−88/SOT−363 CASE 419B 1 D TY M G D G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2006 MARKING DIAGRAM & PIN ASSIGNMENT 1 Device NTJS4151PT1 NTJS4151PT1G Package Shipping† SC−88 3000 / Tape & Reel SC−88 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTJS4151P/D NTJS4151P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS −20 VGS = 0 V, ID = −250 mA VGS = −16 V, VDS = 0 V V −12 mV/°C TJ = 25°C −1.0 TJ = 85°C −5.0 mA VDS = 0 V, VGS = ±4.5 V ±1.5 mA VDS = 0 V, VGS = ±12 V ±10 mA −1.2 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) −0.40 Negative Threshold Temperature Coefficient VGS(TH)/TJ VGS = VDS, ID = −250 mA 4.0 Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −3.3 A 47 60 VGS = −2.5 V, ID = −2.3 A 70 85 VGS = −1.8 V, ID = −1.0 A 180 205 VGS = −10 V, ID = −3.3 A 12 S 850 pF Forward Transconductance gFS mV/°C mW CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = −10 V QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 160 110 nC 10 VGS = −4.5 V, VDS = −10 V, ID = −3.3 A 1.5 2.8 SWITCHING CHARACTERISTICS (Note 3) td(ON) Turn−On Delay Time Rise Time Turn−Off Delay Time tr td(OFF) Fall Time 0.85 VGS = −4.5 V, VDD = −10 V, ID = −1.0 A, RG = 6.0 W tf ms 1.7 2.7 4.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Ta Discharge Time Tb Reverse Recovery Charge VGS = 0 V, IS = −1.3 A, TJ = 25°C −0.75 63 VGS = 0 V, dIS/dt = 100 A/ms, IS = −1.3 A QRR http://onsemi.com 2 V ns 9.0 54 0.23 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. −1.2 nC NTJS4151P 5 3 VGS = −1.6 V VGS = −2.8 V to 6.0 V . 2 VGS = −1.4 V 1 0 0 2 4 −ID, DRAIN CURRENT (A) VGS = −2.0 V VGS = −1.0 V 3 2 1 VGS = −1.2 V 4 6 0 8 0 1 2 3 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. On−Region Characteristics 0.5 ID = −3.3 A TJ = 25°C 0.4 0.3 0.2 0.1 0 0 2 4 6 0.6 TJ = 25°C 0.5 0.4 VGS = −1.8 V 0.3 0.2 0.1 VGS = −2.5 V VGS = −4.5 V 0 1 2 3 4 5 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 100000 1.6 VGS = 0 V ID = −3.3 A VGS = 4.5 V −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS w −10 V VGS = −2.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 4 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C VGS = −1.8 V 1.4 1.2 1 TJ = 150°C 10000 1000 0.8 0.6 −50 100 −25 0 25 50 75 100 125 150 0 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 20 VGS = 0 V TJ = 25°C 1000 CISS 750 500 250 0 0 4 8 12 16 15 5 QT 4 VGS VDS 12 9 3 6 2 Qgs Qgd ID = −3.3 A TJ = 25°C 1 0 0 20 2 4 6 8 10 3 0 12 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 10000 3 −IS, SOURCE CURRENT (A) tf t, TIME (ns) td(off) tr 1000 td(on) 100 1 10 100 VGS = 0 V TJ = 25°C 2.5 2 1.5 1 0.5 0 0.4 0.5 0.6 0.7 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1250 −VGS, GATE−TO−SOURCE VOLTAGE (V) NTJS4151P 0.9 NTJS4151P PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e A3 6 5 4 HE C −E− 1 2 DIM A A1 A3 b C D E e L HE 3 L b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 A SOLDERING FOOTPRINT* A1 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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