2SC2309 Silicon NPN Epitaxial REJ03G0696-0200 (Previous ADE-208-1061) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 6 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 200 150 –55 to +150 Unit V V V mA mW °C °C 2SC2309 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Rev.2.00 Aug 10, 2005 page 2 of 6 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VBE VCE(sat) fT Cob Min 55 50 5 — — 250 — — — — Typ — — — — — — — — 230 1.8 Max — — — 0.5 0.5 500 0.75 0.2 — 3.5 Unit V V V µA µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz 2SC2309 Main Characteristics Typical Output Characteristics P 10 200 150 100 50 50 0 100 8 6 4 2 0 150 4 Ambient Temperature Ta (°C) 00 12 16 20 Typical Transfer Characteristics 700 5 VCE = 12 V Collector Current IC (mA) DC Current Transfer Ratio hFE 8 600 500 Ta 5°C =7 400 25 300 200 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5 10 20 VCE = 12 V 4 3 2 1 0 50 0.2 Collector Current IC (mA) 0.7 0.6 0.5 0.4 -20 0 20 40 60 Ambient Temperature Ta (°C) Rev.2.00 Aug 10, 2005 page 3 of 6 80 0.6 0.8 1.0 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) VCE = 12 V IC = 2 mA 0.8 0.4 Base to Emitter Voltage VBE (V) Base to Emitter Voltage vs. Ambient Temperature 0.9 =2 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Base to Emitter Voltage VBE (V) C 26 24 22 20 18 16 14 12 10 8 6 4 2 µA IB = 0 250 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 10 IE = 0 f= 1 MHz 5 2 1 1 2 5 10 Collector to Base Voltage VCB (V) mW 24 2SC2309 Contours of Constant Noise Figure Signal Source Resistance Rg (kΩ) 10 IC = 0 f= 1 MHz 5 2 1 1 2 5 10 100 1 dB 10 d B 8 dB 6 dB 4 dB 2 dB 1 Emitter Input Capacitance Cie (pF) Emitter Input Capacitance vs. Emitter to Base Voltage dB 30 2 dB 4d 10 B 6d B 3 8 dB 10 dB 1.0 0.3 0.1 0.001 0.003 0.01 dB 0.3 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1.0 Signal Source Resistance Rg (kΩ) 1 dB 6 8 1.0 dB dB dB dB 3 dB 2 VCE = 6 V f = 120 Hz dB 8 dB 6 dB 4 2 1 Signal Source Resistance Rg (kΩ) 100 4 0.3 3.0 100 VCE = 6 V f = 1 kHz 30 4 2 10 1 2 3 4 1.0 1.0 0.3 1 dB dB 10 8 dB 6 dB dB dB dB dB 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1.0 Collector Current IC (mA) Noise Figure vs. Collector to Emitter Voltage Noise Figure vs. Frequency 12 10 10 Noise Figure NF (dB) VCE = 6 V IC = 0.1 mA Rg = 10 kΩ 8 6 4 2 IC = 0.1 mA f = 10 Hz Rg = 10 kΩ 8 6 4 2 0 0 10 20 50 100 200 Frequency f (Hz) Rev.2.00 Aug 10, 2005 page 4 of 6 500 3.0 d 6 B d 8 B 10 dB dB Collector Current IC (mA) Noise Figure NF (dB) 0.1 Contours of Constant Noise Figure Contours of Constant Noise Figure 10 0.03 Collector Current IC (mA) Emitter to Base Voltage VEB (V) 30 VCE = 6 V f = 10 Hz 1k 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 3.0 2SC2309 Noise Figure vs. Collector to Emitter Voltage Noise Figure vs. Collector to Emitter Voltage 10 IC = 0.1 mA f = 120 Hz Rg = 10 kΩ 8 Noise Figure NF (dB) Noise Figure NF (dB) 10 6 4 2 IC = 0.1 mA f = 1 kHz Rg = 10 kΩ 8 6 4 2 0 0 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 5 of 6 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 2SC2309 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC2309DTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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