DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeters) • The 2SC3810 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating 1.25 ± 0.1 5.0 MIN. current range. • Dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits. 5.0 MIN. 3.5 +0.3 -0.2 3 2 4 1 RATINGS UNIT Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 65/unit mA Total Power Dissipation PT 240/unit mW Rth (j-c) 90/unit °C/W Junction Temperature Tj 200 °C Storage Temperature Tstg -65 to +200 °C 0.1 +0.06 -0.03 SYMBOL 2.0 MAX. 0.6 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Thermal Resistance (junction to case) 5.0 MIN. 5 PARAMETER 0.6 ± 0.1 FEATURES (#492C) PIN CONNECTIONS 2 3 C2 C1 4 1 B1 B2 E 5 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL Collector to Base Breakdown Voltage BVCBO IC = 10 µA 20 V Emitter to Base Breakdown Voltage BVEBO IE = 10 µA, IC = 0 1.5 V Collector to Emitter Breakdown Voltage BVCEO IC = 1 mA, RBE = ∞ 10 V Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0 µA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 1.0 µA DC Current Gain hFE VCE = 8 V, IC = 20 mA 50 VCE = 8 V, IC = 20 mA 0.6 hFE Ratio hFE1/hFE2 Note 1 TEST CONDITIONS Difference of Base to Emitter Voltage ∆ VBE VCE = 8 V, IC = 20 mA Gain Bandwidth Product fT Note 2 VCE = 8 V, IC = 20 mA Feedback Capacitance Cre Note 3 VCB = 10 V, IE = 0, f = 1.0 MHz MIN. TYP. 100 MAX. 250 1.0 30 7 UNIT 8 0.5 mV GHz 1.0 pF Notes 1. hFE1 is the smaller hFE value of the 2 transistors. 2. Measured using a single-type device (equivalent to the 2SC3604). 3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to the guard terminal of the bridge. Document No. P11698EJ1V0DS00 (1st edition) Date Published July 1996 P Printed in Japan © 1996 2SC3810 REGARDING CLEANSING Cleanse the flux after soldering. Particularly, cleanse the bottom surface of the transistor so that flux does not remain. If any flux remains on the bottom surface, it may absorb moisture, resulting in short circuit among pins due to metal-migration at the metalized area of the transistor. You can use alcohol as a solvent. Do not apply ultra-sonic-cleaning on this product. TYPICAL CHARACTERISTICS (TA = 25 °C) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 3 200 VCE = 8 V f = 1.0 MHz hFE - DC Current Gain Cre - Feedback Capacitance - pF 2 1 0.7 0.5 0.3 20 10 0.5 1 2 3 5 7 10 20 VCB - Collector to Base Voltage - V 30 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 VCE = 8 V 20 fT - Gain Bandwidth Product - GHz 50 0.2 0.1 10 7 5 3 2 1 2 2 100 3 5 7 10 IC - Collector Current - mA 20 30 1 5 10 IC - Collector Current - mA 50 2SC3810 [MEMO] 3 2SC3810 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Anti-radioactive design is not implemented in this product. M4 94.11 4