P2003BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) ID 20mΩ @VGS = 10V 32A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage SYMBOL VDS LIMITS VGS ±20 Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current Avalanche Current TA = 25 °C Avalanche Energy Power Dissipation TA = 100 °C L = 0.1mH TA = 25 °C 20 IDM 110 IAS 23 EAS 27 TJ, TSTG V 32 A mJ 35 PD TA = 100 °C Operating Junction & Storage Temperature Range 25 ID 1,2 UNITS W 14 -55 to 150 °C THERMAL RESISTANCE RATINGS SYMBOL THERMAL RESISTANCE TYPICAL MAXIMUM Junction-to-Case RθJC 3.6 Junction-to-Ambient RθJA 75 1 Pulse width limited by maximum junction temperature. 2 Limited only by maximum temperature allowed Ver 1.0 1 UNITS °C / W 2010/5/17 P2003BDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX 1.8 2.5 UNIT STATIC V(BR)DSS VGS = 0V, ID = 250µA 25 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 25 VDS = 20V, VGS = 0V , TJ = 125 °C 25 On-State Drain Current1 ID(ON) Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance1 Forward Transconductance 1 VDS = 10V, VGS = 10V RDS(ON) gfs 110 V nA µA A VGS = 4.5V, ID = 10A 29 41 VGS = 10V, ID = 15A 14 20 VDS = 5V, ID = 15A 19 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Gate-Source Charge 2 Gate-Drain Charge2 Turn-On Delay Time 2 VGS = 0V, VDS = 0V, f = 1MHz Turn-Off Delay Time VDS = 0.5V(BR)DSS, ID = 15A, VGS = 10V 7.7 10 VDD = 15V, ID = 10A, VGS = 10V, RG=6Ω nC 2.3 5.6 td(off) Ω 14.7 td(on) 17 nS 36 tf 27 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C) IS Continuous Current 1 Forward Voltage Reverse Recovery Time VSD Reverse Recovery Charge Qrr trr IF = 15A, VGS = 0V IF = 15A, dlF/dt = 100A / µS 1 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. 2 Independent of operating temperature. Ver 1.0 1.5 Qgd tr 2 pF 221 189 Qg(VGS=4.5V) Qgs 2 Fall Time2 VGS = 0V, VDS = 15V, f = 1MHz Qg(VGS=10V) Total Gate Charge2 Rise Time 492 2 25 A 1.4 V 27 nS 36 nC 2010/5/17 P2003BDG N-Channel Enhancement Mode MOSFET Ver 1.0 3 2010/5/17 P2003BDG N-Channel Enhancement Mode MOSFET Ver 1.0 4 2010/5/17 P2003BDG N-Channel Enhancement Mode MOSFET Ver 1.0 5 2010/5/17