Ordering number:ENN2481C NPN Triple Diffused Planar Silicon Transistor 2SC4160 400V/4A Switching Regulator Applications Features Package Dimensions · High breakdown voltage. · High reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. unit:mm 2041A [2SC4160] 4.5 2.8 3.5 7.2 10.0 5.6 18.1 16.0 3.2 2.4 14.0 1.6 1.2 0.7 0.75 1 2 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 3 2.55 2.4 2.55 Specifications 2.55 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 500 V Collector-to-Emitter Voltage VCEO VEBO 400 V 7 V 4 A 8 A Emitter-to-Base Voltage Collector Current IC Collector Current (Pulse) ICP Base Current PW≤300µs, duty cycle≤10% IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 1.5 A 2 W Tc=25˚C 25 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Ratings Conditions min typ max Unit Collector Cutoff Current ICBO VCB=400V, IE=0 10 µA Emitter Cutoff Current IEBO 10 µA 15 DC Current Gain hFE1* hFE2 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A 10 VCE=5V, IC=10mA 10 hFE3 * : The hFE1 of the 2SC4160 is classified as follows. When specifying the hFE1 rank, specify two or more ranks in principle. 50 Continued on next page. Rank hFE L 15 to M 30 20 to N 40 30 to 50 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2500TS (KOTO)/D0198HA (KT)/3267TA, TS No.2481–1/4 2SC4160 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage min Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Storage Time Fall Time MHz 50 pF IC=2A, IB=0.4A VCEX(sus) IC=2A, IB1=0.2A, IB2=–0.8A, L=1mH, clamped IC=3A, IB1=0.6A, IB2=–1.2A, RL=66.6Ω, ton VCC=200V IC=3A, IB1=0.6A, IB2=–1.2A, RL=66.6Ω, tstg VCC=200V IC=3A, IB1=0.6A, IB2=–1.2A, RL=66.6Ω, tf VCC=200V Turn-ON Time Unit max 20 IC=2A, IB=0.4A V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE=∞ V(BR)EBO IE=1mA, IC=0 Collector-to-Base Breakdown Voltage typ VCE=10V, IC=0.4A VCB=10V, f=1MHz VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions 0.8 V 1.5 V 500 V 400 V 7 V 400 V 0.5 µs 2.5 µs 0.3 µs Switching Time Test Circuit I B1 I B2 PW=20µs DC≤1% OUTPUT INPUT RB RL VR + + 100µF 470µF VCC=200V I C - VCE 5 4 A 400mA 150mA 100mA 2 50mA 2 C 200mA 3 3 120° Collector Current, IC – A Collector Current, IC – A 350mA 300mA 250mA 4 Ta= 50m A 4 500m I C - VBE(on) VCE =5V -40°C VBE =-5V 25°C 50Ω 1 1 IB= 0 4 6 8 0 0 10 0.2 Collector-to-Emitter Voltage, VCE – V hFE - I C -40°C 10 7 5 5 1.2 1.4 IC / IB=5 7 5 3 20 DC Current Gain, hFE 25°C 2 1.0 =1 Ta=120°C 3 0.8 Ta 7 5 0.6 VCE(sat) - I C 1.0 VCE =5V Collector-to-Emitter Saturation Voltage, VCE(sat) – V 100 0.4 Base-to-Emitter Voltage, VBE(on) – V 2 -40 °C 2 25 °C °C 0 0 0.1 7 7 0.1 2 3 5 7 1.0 2 Collector Current, IC – A 3 5 7 10 5 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC – A No.2481–2/4 2SC4160 VBE(sat) - I C IC / IB=5 7 7 5 3 2 -40°C 1.0 SW Time - I C 10 Switching Time, SW Time – µs Base-to-Emitter Saturation Voltage, VBE(sat) – V 10 7 25°C 5 Ta=120°C 5 2 1.0 7 5 3 5 7 2 0.1 3 5 7 2 1.0 3 5 7 ton 2 0.1 7 3 tst g 3 VCC = 200V R load IC / IB1=5 IB1=-2.5A IB2 5 0.1 10 2 3 5 Forward Bias A S O Collector Current, IC – A tio n s 1m Emitter Current, IE – A era s 0µ op 10 DC ms 10 B S/ 3 2 Li ted mi 0.1 7 5 3 5 7 5 3 2 1.0 7 5 L =100µH IB2 = -0.8A Constant Tc = 25°C 3 10 2 3 5 7 100 2 3 5 0.1 7 5 Collector-to-Emitter Voltage, VCE – V Collector Dissipation, PC – W Collector Dissipation, PC – W he at sin k 1.0 20 40 60 80 100 2 100 120 Ambient Temperature, Ta – °C 3 5 7 1000 P C - Tc 30 2.0 No 7 Collector-to-Emitter Sustain Voltage, VCEX(sus) – V P C - Ta 3.0 0 0 10 ICP 2 Tc = 25°C Signal pulse 3 7 7 1.0 7 5 2 5 Reverse Bias A S O 2 10 3 IC=4A 2 0.01 3 ≤50µs ICP=8A 10 7 5 2 1.0 Collector Current, IC – A Collector Current, IC – A 2 7 tf 140 160 25 20 10 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc – °C No.2481–3/4 2SC4160 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2000. Specifications and information herein are subject to change without notice. PS No.2481–4/4