Power Transistors 2SC5145 Silicon NPN triple diffusion planar type ● 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 For high breakdown voltage high-speed switching 0.8±0.1 0.5max. 2.54±0.3 (TC=25˚C) 1 V VCEO 500 V Emitter to base voltage VEBO 8 V Peak collector current ICP 10 A Collector current IC 5 A Base current IB 3 A Collector to emitter voltage Collector power TC=25°C Ta=25°C dissipation Junction temperature Tj Storage temperature Tstg 6.0±0.3 1.0±0.1 R0.5 R0.5 0.8±0.1 0 to 0.4 1.1 max. W 1.3 ■ Electrical Characteristics 3.4±0.3 2.54±0.3 40 PC Unit: mm 8.5±0.2 150 ˚C –55 to +150 ˚C 14.7±0.5 V 800 +0.4 800 VCES 3.0–0.2 VCBO 4.4±0.5 Collector to base voltage +0 Unit 1.5–0.4 Ratings 1:Base 2:Collector 3:Emitter N Type Package 3 10.0±0.3 Symbol 2 2.0 Parameter 4.4±0.5 ■ Absolute Maximum Ratings 5.08±0.5 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 800V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 100 µA Collector to emitter voltage VCEO(sus) Forward current transfer ratio * IC = 0.2A, L = 25mH 500 hFE1 VCE = 5V, IC = 0.1A 15 8 hFE2 VCE = 5V, IC = 3A Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.6A Base to emitter saturation voltage VBE(sat) IC = 3A, IB = 0.6A Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf *V CEO(sus) Test circuit IC = 3A, IB1 = 0.6A, IB2 = – 0.6A, VCC = 200V 50/60Hz mercury relay V 1 1.5 8 V V MHz 1 µs 3 µs 1 µs X L 25mH Y 120Ω 6V 1Ω 15V G 1 Power Transistors 2SC5145 PC — Ta IC — VCE (1) 40 30 20 TC=25˚C 7 IB=1200mA 6 1000mA 800mA 5 600mA 4 400mA 300mA 3 200mA 150mA 2 100mA 50mA 20mA 10 1 (2) (3) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 8 10 TC=–25˚C 100˚C 0.3 0.1 0.03 0.3 1 TC=100˚C 1 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 3 0.1 0.3 1 10 fT — IC 300 100 TC=100˚C 25˚C 30 –25˚C 10 3 1 0.3 VCE=10V f=1MHz TC=25˚C 300 100 30 10 3 1 0.3 0.1 0.01 0.03 10 3 Collector current IC (A) Transition frequency fT (MHz) Forward current transfer ratio hFE 3 0.1 25˚C 3 VCE=5V 10 0.01 0.01 0.03 10 1000 IC/IB=5 30 1 IC/IB=5 30 hFE — IC 1000 25˚C 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 Base to emitter saturation voltage VBE(sat) (V) 6 Collector current IC (A) 0.1 0.3 1 3 0.1 0.01 0.03 10 Collector current IC (A) Cob — VCB 0.1 0.3 1 3 10 Collector current IC (A) ton, tstg, tf — IC Area of safe operation (ASO) 100 10000 IE=0 f=1MHz TC=25˚C 1000 300 100 30 10 10 0.1 10 30 100 3 t=0.5ms IC 1ms 10ms 1 DC 0.3 0.1 0.03 0.01 0.01 3 tf 0.3 1 0.1 1 ICP ton 1 0.03 Collector to base voltage VCB (V) 10 tstg 3 3 0.3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=–IB2) VCC=200V TC=25˚C 30 Switching time ton,tstg,tf (µs) 3000 Collector current IC (A) 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) 0 2 VCE(sat) — IC 8 Collector current IC (A) Collector power dissipation PC (W) 50 Non repetitive pulse 0.003 T =25˚C C 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC5145 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 8 Lcoil=50µH IC/IB=5 (IB1=–IB2) TC=100˚C Collector current IC (A) 7 L coil 6 IB1 5 T.U.T –IB2 Vin 4 IC VCC 3 2 Vclamp tW 1 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3