Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type Unit: mm For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 2SB1148 base voltage 2SB1148A Collector to Ratings +0.3 1.0±0.2 2 1:Base 2:Collector 3:Emitter I Type Package 3 Unit V –50 7.0±0.3 3.5±0.2 2.0±0.2 –20 VCEO emitter voltage 2SB1148A 1 –40 VCBO 2SB1148 4.6±0.4 (TC=25˚C) Symbol Collector to 2.3±0.2 0 to 0.15 V –40 Peak collector current ICP –20 A Collector current IC –10 A dissipation 15 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 1.3 150 ˚C ˚C Symbol 2SB1148 2SB1148A Emitter cutoff current ICBO IEBO Collector to emitter 2SB1148 voltage 2SB1148A Forward current transfer ratio 0.9±0.1 0 to 0.15 2 3 2.3±0.2 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Parameter current 1 –55 to +150 0.5 max. 1.1±0.1 4.6±0.4 ■ Electrical Characteristics Collector cutoff 2.5 0.75±0.1 W 1.0 V 1.0 max. –7 7.2±0.3 VEBO 10.2±0.3 3.0±0.2 Emitter to base voltage Collector power TC=25°C Unit: mm 1.0 Parameter 0.85±0.1 0.4±0.1 2.5±0.2 ■ Absolute Maximum Ratings 1.1±0.1 0.75±0.1 2.5±0.2 ● Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0 –0. ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 Conditions min –50 VCB = –50V, IE = 0 –50 VEB = –5V, IC = 0 –50 –20 IC = –10mA, IB = 0 hFE1 VCE = –2V, IC = – 0.1A 45 VCE = –2V, IC = –3A 90 hFE2 max VCB = –40V, IE = 0 VCEO * typ Unit µA µA V –40 260 Collector to emitter saturation voltage VCE(sat) IC = –10A, IB = – 0.33A Base to emitter saturation voltage VBE(sat) IC = –10A, IB = – 0.33A Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz 100 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 400 pF Turn-on time ton 0.1 µs Storage time tstg 0.5 µs Fall time tf 0.1 µs *h FE2 IC = –3A, IB1 = – 0.1A, IB2 = 0.1A, VCC = –20V – 0.6 –1.5 V V Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SB1148, 2SB1148A IC — VCE (1) 5 –60mA –50mA –8 –40mA –35mA –6 –25mA –15mA –10mA –5mA (2) 0 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 –12 –3 100˚C 25˚C – 0.1 – 0.03 – 0.3 –1 –3 300 25˚C TC=100˚C 100 –25˚C 30 10 3 300 100 30 10 3 Cob — VCB –1 –3 –10 –30 1 – 0.01 – 0.03 – 0.1 – 0.3 –100 ton, tstg, tf — IC IE=0 f=1MHz Ta=25˚C Switching time ton,tstg,tf (µs) 100 30 10 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C 3 1 –30 tstg 0.3 ton –10 Non repetitive pulse TC=25˚C ICP IC t=1ms –3 –1 –30 –100 tf – 0.1 0.03 Collector to base voltage VCB (V) 0 –1 –2 –3 –4 10ms 300ms – 0.3 0.1 0.01 –10 –10 Area of safe operation (ASO) – 0.03 –3 –3 –100 3 –1 –1 Collector current IC (A) 10 300 1 – 0.1 – 0.3 VCE=–10V f=10MHz TC=25˚C Collector current IC (A) 10000 –10 1000 1 – 0.1 – 0.3 –10 1000 –3 3000 Collector current IC (A) 3000 –1 VCE=–2V 3000 Collector current IC (A) – 0.01 – 0.1 – 0.3 Collector current IC (A) fT — IC 1000 TC=–25˚C –1 – 0.01 – 0.1 10000 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –10 hFE — IC IC/IB=30 – 0.3 Collector output capacitance Cob (pF) –8 –25˚C Collector to emitter voltage VCE (V) VBE(sat) — IC –10 –6 TC=100˚C 25˚C 2SB1148 20 –1 – 0.03 Transition frequency fT (MHz) 0 –3 – 0.1 –20mA –2 IC/IB=30 – 0.3 –30mA –4 –10 –5 –6 –7 Collector current IC (A) –8 – 0.01 –1 2SB1148A 10 –80mA –10 Collector current IC (A) Collector power dissipation PC (W) 15 TC=25˚C IB=–100mA (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 2 VCE(sat) — IC –12 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 20 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1148, 2SB1148A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3