Power Transistors 2SB1498 Silicon PNP triple diffusion planar type Unit: mm 7.0±0.3 For power switching +0.3 1.0±0.2 10.0 –0. High-speed switching High collector to base voltage VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 2.3±0.2 4.6±0.4 1 ■ Absolute Maximum Ratings 0.85±0.1 0.4±0.1 2 1:Base 2:Collector 3:Emitter I Type Package 3 (TC=25˚C) 7.0±0.3 VCBO –600 V VCEO –600 V Emitter to base voltage VEBO –7 V Peak collector current ICP – 0.6 A Collector current IC – 0.3 A 0 to 0.15 3.0±0.2 2.5 0.75±0.1 0.5 max. 1.1±0.1 Collector power TC=25°C dissipation Ta=25°C 15 PC Junction temperature Tj Storage temperature Tstg W 1.3 ■ Electrical Characteristics 150 ˚C –55 to +150 ˚C Unit: mm 1.0 Collector to base voltage Collector to emitter voltage 3.5±0.2 2.0±0.2 1.0 Unit 1.0 max. Ratings 7.2±0.3 Symbol 10.2±0.3 Parameter 2.5±0.2 ● 1.1±0.1 0.75±0.1 2.5±0.2 ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 1 0.9±0.1 0 to 0.15 2 3 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –600V, IE = 0 –100 µA Emitter cutoff current IEBO VEB = –7V, IC = 0 –100 µA Collector to emitter voltage VCEO IC = –10mA, IB = 0 hFE1 VCE = –5V, IC = –50mA 30 8 Forward current transfer ratio –600 V hFE2 VCE = –5V, IC = –150mA Collector to emitter saturation voltage VCE(sat) IC = –150mA, IB = –30mA Base to emitter saturation voltage VBE(sat) IC = –150mA, IB = –30mA Transition frequency fT VCE = –10V, IC = –50mA, f = 1MHz Turn-on time ton IC = –150mA, 1.0 µs Storage time tstg IB1 = –30mA, IB2 = 60mA, 3.5 µs Fall time tf VCC = –200V 0.5 µs –1.0 –1.5 10 V V MHz 1 Power Transistors 2SB1498 PC — Ta IC — VCE –1.0 15 – 0.8 – 0.6 10 (1) IB=–180mA 5 – 0.2 (2) 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 –10 –3 –1 TC=–25˚C 25˚C – 0.3 –10 –12 –1 –3 TC=100˚C –25˚C 25˚C 10 3 –1 –3 10 3 1 0.3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (–IB1=IB2) VCC=–150V TC=25˚C 10 Collector to base voltage VCB (V) Non repetitive pulse TC=25˚C –3 3 –1 – 0.3 tstg 1 ICP t=1ms IC 10ms – 0.1 0.3 ton 0.1 tf – 0.03 300ms – 0.01 – 0.003 0.01 –100 –1 Area of safe operation (ASO) 0.03 –30 3 –10 30 Switching time ton,tstg,tf (µs) 30 –10 10 Collector current IC (A) ton, tstg, tf — IC 100 –3 30 0.1 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 100 IE=0 f=1MHz TC=25˚C –10 VCE=–10V f=1MHz TC=25˚C Collector current IC (A) Cob — VCB –3 fT — IC 100 30 –1 Collector current IC (A) 100 300 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 1000 1 –1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 VCE=–5V Collector current IC (A) Collector output capacitance Cob (pF) –8 1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –30 300 100˚C hFE — IC IC/IB=5 – 0.1 – 0.01 – 0.03 – 0.1 – 0.3 25˚C –1 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 100˚C –6 Transition frequency fT (MHz) 40 –3 – 0.03 Collector current IC (A) 20 –10 – 0.1 0 0 IC/IB=5 –30 – 0.3 TC=–25˚C –100mA –80mA –60mA –40mA –20mA –10mA – 0.4 Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 2 VCE(sat) — IC –100 –1.2 Collector current IC (A) Collector power dissipation PC (W) 20 0 – 0.1 – 0.2 – 0.3 Collector current IC (A) – 0.4 – 0.001 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1498 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 300 (1) 100 (2) 30 10 3 1 0.3 0.1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3