ETC 2SA1495

Power Transistors
2SA1495
Silicon PNP epitaxial planar type
Unit: mm
7.0±0.3
For high-speed switching
+0.3
1.0±0.2
2.3±0.2
4.6±0.4
1
■ Absolute Maximum Ratings
0.4±0.1
2
1:Base
2:Collector
3:Emitter
I Type Package
3
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–400
V
Collector to emitter voltage
VCEO
–400
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–1.2
A
Collector current
IC
– 0.6
A
7.0±0.3
Collector power TC=25°C
dissipation
15
PC
Ta=25°C
Tj
Storage temperature
Tstg
150
˚C
–55 to +150
˚C
0.75±0.1
1.0
0.9±0.1
0 to 0.15
2
3
2.3±0.2
1:Base
2:Collector
3:Emitter
I Type Package (Y)
(TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
VCB = –400V, IE = 0
Emitter cutoff current
IEBO
VEB = –7V, IC = 0
Collector to emitter voltage
VCEO
IC = –10mA, IB = 0
hFE1
Forward current transfer ratio
0.5 max.
1.1±0.1
4.6±0.4
■ Electrical Characteristics
1.0
1.0 max.
10.2±0.3
7.2±0.3
2.5
1
Junction temperature
Unit: mm
0 to 0.15
3.0±0.2
W
1.3
3.5±0.2
2.0±0.2
2.5±0.2
●
0.85±0.1
0.75±0.1
2.5±0.2
●
1.1±0.1
High foward current transfer ratio hFE
High-speed switching
High collector to base voltage VCBO
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.0 –0.
●
0.8±0.2
7.2±0.3
■ Features
●
3.5±0.2
3.0±0.2
*
min
typ
max
Unit
–100
µA
–100
µA
–400
VCE = –5V, IC = –100mA
30
10
V
160
hFE2
VCE = –5V, IC = –300mA
Collector to emitter saturation voltage
VCE(sat)
IC = –300mA, IB = –60mA
–1.0
V
Base to emitter saturation voltage
VBE(sat)
IC = –300mA, IB = –60mA
–1.5
V
Transition frequency
fT
VCE = –10V, IC = –100mA, f = 1MHz
Turn-on time
ton
IC = –300mA,
1.0
µs
Storage time
tstg
IB1 = –60mA, IB2 = 60mA,
3.5
µs
Fall time
tf
VCC = –100V
1.0
µs
*h
FE1
15
MHz
Rank classification
Rank
Q
P
O
hFE1
30 to 60
50 to 100
80 to 160
1
Power Transistors
2SA1495
PC — Ta
IC — VCE
VCE(sat) — IC
TC=25˚C
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
– 0.7
IB=–40mA
15
– 0.6
– 0.5
10
(1)
5
–10mA
–8mA
– 0.4
–6mA
– 0.3
–4mA
–2mA
– 0.1
0
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
–1
–2
–3
–4
–5
–6
–7
–8
VCE=–5V
25˚C
– 0.1
– 0.03
– 0.01
– 0.01
– 0.03
3000
– 0.1
– 0.3
TC=100˚C
300
25˚C
100
–25˚C
30
10
3
1
– 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
–1
10
tstg
3
Non repetitive pulse
TC=25˚C
–3
ICP
–1
t=1ms
IC
– 0.3
1
10ms
300ms
– 0.1
tf
0.3
– 0.03
ton
0.1
– 0.01
– 0.003
0.03
0.01
0
– 0.2
– 0.4
– 0.6
– 0.8
Collector current IC (A)
2
–10
Collector current IC (A)
Switching time ton,tstg,tf (µs)
Area of safe operation (ASO)
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5 (–IB1=IB2)
VCC=–100V
Ta=25˚C
30
–1
Collector current IC (mA)
ton, tstg, tf — IC
–1.0
– 0.001
–1
–3
–10
300
VCE=–10V
f=1MHz
TC=25˚C
100
30
10
3
1
0.3
Collector current IC (A)
100
Transition frequency fT (MHz)
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
– 0.3
–1
Collector current IC (A)
fT — IC
1000
100˚C
–25˚C
1000
IC/IB=5
TC=–25˚C
25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
hFE — IC
10000
–3
TC=100˚C
–1
Collector to emitter voltage VCE (V)
VBE(sat) — IC
–1
–3
– 0.03
(2)
20
–10
– 0.1
–1mA
0
IC/IB=5
–30
– 0.3
– 0.2
0
Collector to emitter saturation voltage VCE(sat) (V)
–100
– 0.8
Collector current IC (A)
Collector power dissipation PC (W)
20
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE (V)
0.1
– 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
Collector current IC (A)
–1
Power Transistors
2SA1495
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3