Ordering number : ENN6990 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage (VCBO=1600V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. unit : mm 2174A [2SC5776] 5.6 3.4 16.0 3.1 0.8 21.0 4.0 22.0 8.0 5.0 • Package Dimensions 2.8 2.0 1 2 20.4 0.7 2.1 0.9 3 1 : Base 2 : Collector 3 : Emitter 3.5 5.45 Specifications SANYO : TO-3PMLH 5.45 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V IC 8 A Collector Current Collector Current (Pulse) ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 16 A 3.0 W 65 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current ICBO ICES VCB=800V, IE=0 VCE=1600V, RBE=0 Emitter Cutoff Current IEBO VEB=4V, IC=0 Ratings min typ max 40 Unit 10 µA 1.0 mA 200 mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62001 TS IM TA-3322 No.6990-1/4 2SC5776 Continued from preceding page. Parameter Symbol hFE1 hFE2 DC Current Gain Ratings Conditions Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) min typ VCE=5V, IC=1A 8 VCE=5V, IC=4.5A 4 Unit max 7 IC=4A, IB=1A IC=4A, IB=1A 3.0 V 1.5 V tstg tf IC=3A, IB1=0.5A, IB2=--1.5A IC=3A, IB1=0.5A, IB2=--1.5A 3.0 µs Fall Time 0.2 µs Diode Forward Voltage VF IEC=6.5A 2.2 V Storage Time Switching Time Test Circuit IB1 PW=20µs D.C.≤1% OUTPUT IB2 INPUT RB VR RL=66.7Ω 50Ω + + 100µF 470µF IC -- VCE VCE=5V 1.6A 1.8A 2.0A 1.2A 1.4A 8 1.0A 0.8A 0.6A 5 4 0.4A 3 0.2A 2 0.1A 1 6 5 4 3 2 1 IB=0 0 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V 0 10 2 °C 120 = 10 C 25° 0 °C --4 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT03555 0.8 1.0 IC / IB=5 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 0.6 1.2 IT03554 VCE(sat) -- IC 10 VCE=5V Ta 0.4 Base-to-Emitter Voltage, VBE -- V hFE -- IC 5 0.2 0 IT03553 °C 2 5 3 2 25°C 1 Ta= --4 0 0 DC Current Gain, hFE 7 120°C 6 Collector Current, IC -- A 7 120 °C 8 IC -- VBE 9 Ta= 9 Collector Current, IC -- A VCC=200V 25° C --40 °C VBE= --2V 1.0 7 5 3 2 0.1 25 °C 120°C 7 5 0.1 2 Ta = --4 0° C 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT03556 No.6990-2/4 2SC5776 SW Time -- IC VCC=200V IC / IB1=6 IB2 / IB1=3 R load 5 3 tstg 2 1.0 7 5 tf 3 2 0.1 3 5 7 2 1.0 3 5 Collector Current, IC -- A tst g 3 2 1.0 7 5 3 2 7 2 10 IT03557 s 0µ 10 s 0µ 30 P C= W 1.0 7 5 DC 3 2 s s 10m 1m 3 2 era op n tio 0.1 7 5 3 3 5 7 IT03558 Reverse Bias A S O L=500µH IB2= --2A Tc=25°C Single pulse 7 5 3 2 1.0 7 5 3 2 Tc=25°C Single pulse 2 2 1.0 10 Collector Current, IC -- A 65 0.01 1.0 7 2 IC=8A 3 2 5 3 ICP=16A 10 7 5 3 Base Current, IB2 -- A Forward Bias A S O 3 2 Collector Current, IC -- A 5 0.1 2 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 0.1 100 5 7 1000 2 3 5 7 2 1000 Collector-to-Emitter Voltage, VCE -- V IT03559 PC -- Ta 4.0 IT03560 PC -- Tc 80 70 Collector Dissipation, PC -- W 3.5 Collector Dissipation, PC -- W VCC=200V IC=3A IB1=0.5A R load 7 tf Switching Time, SW Time -- µs 7 SW Time -- IB2 10 Switching Time, SW Time -- µs 10 3.0 2.5 No 2.0 he at sin k 1.5 1.0 65 60 50 40 30 20 10 0.5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03561 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT03562 No.6990-3/4 2SC5776 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice. PS No.6990-4/4