2SC6100 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6100 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.) +0.1 0.3 -0.05 • 1 3 2 0.166±0.05 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) 0.65±0.05 • 2.0±0.1 1.7±0.1 Characteristics 0.7±0.05 Absolute Maximum Ratings (Ta = 25°C) Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V UFM DC IC 2.5 Pulse ICP 4.0 A JEDEC ― IB 250 JEITA ― PC (Note 1) 800 PC (Note 2) 500 Tj 150 °C Tstg −55 to 150 °C Collector current Base current Collector power dissipation Junction temperature Storage temperature range mA TOSHIBA mW 1 :Base 2 :Emitter 3 :Collector 2-2U1A Weight: 6.6 mg (typ.) Note1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mmt, Cu Pad: 645 mm2 ) Note2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mmt, Cu Pad: 645 mm2 ) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-06-22 2SC6100 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V Collector-emitter breakdown voltage hFE (1) VCE = 2 V, IC = 0.3 A 400 ⎯ 1000 hFE (2) VCE = 2 V, IC = 1 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 0.14 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 1.10 V VCB = 10 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF See Figure 1. ⎯ 40 ⎯ VCC ≈ 30 V, RL = 30 Ω ⎯ 500 ⎯ IB1 = −IB2 = 33.3 mA ⎯ 120 ⎯ DC current gain Collector output capacitance Switching time Cob Rise time tr Storage time tstg Fall time tf ⎯ ns Marking VCC Part No. (or abbreviation code) IB1 Input IB1 RL 20 μs W Output B IB2 IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart 2 2010-06-22 2SC6100 hFE – IC IC – VCE 3 60 70 10000 50 40 (A) Collector current IC DC current gain hFE 30 2.5 20 2 10 1.5 5 1 Common emitter VCE = 2 V Single nonrepetitive pulse Ta = 100°C 1000 25 −55 100 IB = 1 mA 0.5 Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 0.2 0.4 0.6 0.8 10 0.001 1 Collector-emitter voltage VCE (V) 0.01 VCE (sat) – IC 0.1 Ta = 100°C −55 25 0.1 1 Collector current IC (A) Common emitter IC/IB = 50 Single nonrepetitive pulse 1 (A) 100 25 0.1 0.001 10 Ta = −55°C 0.01 0.1 Collector current IC 1 10 (A) IC – VBE 3 Common emitter VCE = 2 V Single nonrepetitive pulse (A) Collector current IC Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Common emitter IC/IB = 50 Single nonrepetitive pulse 0.01 10 VBE (sat) – IC 10 0.001 0.001 1 Collector current IC 1 0.01 0.1 2 Ta = 100°C 1 25 −55 0 0 0.4 0.8 Base-emitter voltage 1.2 1.6 VBE (V) 3 2010-06-22 2SC6100 Transient Thermal Resistance 過渡熱抵抗 rth - tw rth – tw 1000 rth (°C/W) 過渡熱抵抗 rth (℃/W) ① (1) 100 10 この過渡熱抵抗データは熱抵抗制限領域にだけ適用されます Curves should be applied in thermal limited area. 単発パルス測定 Ta=25℃ Single nonrepetitive pulse Ta = 25°C ①セラミック基板実装時 (1)Mounted on ceramic board. （25.4mm×25.4mm×0.8t ,CuPad 645mm2) (25.4 mm × 25.4 mm × 0.8 mmt Cu Pad: 645 mm2 ) ②FR4基板実装時 (2)Mounted on an FR4 board (25.4mm×25.4mm×1.6t ,ガラスエポキシ2 ,CuPad 645mm2 ） (glass epoxy, 1.6 mmt thick, Cu area: 645 mm ) 1 0.01 0.1 1 10 100 1000 Pulse width twtw(s)(s) パルス幅 Safe Operating Area 10 IC max (pulsed) ♦ 10 ms♦ 1 ms♦100 μs♦ 10 μs♦ (A) IC max (continuous) 100 ms♦* 1 10 s♦* DC operation * (Ta = 25°C) ♦: Single nonrepetitive pulse Ta = 25°C 0.1 Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mmt thick, Cu area: 2 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 VCEO max Collector current IC Transient thermal resistance ② (2) 10 100 Collector-emitter voltage VCE (V) 4 2010-06-22 2SC6100 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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