PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 — 3 June 2004 Objective data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. 1.2 Features ■ ■ ■ ■ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required. 1.3 Applications ■ Power management ◆ DC-to-DC conversion ◆ Supply line switching ■ Peripheral driver ◆ Inductive load drivers (e.g. relays, buzzers and motors) ◆ Driver in low supply voltage applications (e.g. lamps and LEDs). 1.4 Quick reference data Table 1: Symbol Quick reference data Parameter Conditions Min Typ Max Unit NPN PNP VCEO collector-emitter voltage - - 60 −60 V IC collector current (DC) - - 1 −1 A ICRP repetitive peak collector current - - 2 −1.5 A RCEsat equivalent on-resistance - - 250 330 mΩ PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Discrete pinning Pin Description Simplified outline 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 6 5 4 Symbol 6 5 4 TR2 TR1 1 2 3 SOT457 1 2 3 sym019 3. Ordering information Table 3: Ordering information Type number Package Name PBSS4160DPN - Description Version plastic surface mounted package; 6 leads SOT457 4. Marking Table 4: Marking Type number Marking code [1] PBSS4160DPN B4 [1] Made in Malaysia. 9397 750 12701 Objective data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 2 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor unless otherwise specified; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 60 V VEBO emitter-base voltage open collector - 5 V IC collector current (DC) - 1 A ICM peak collector current - 2 A ICRP repetitive peak collector current t = 1 ms or limited by Tj(max) NPN [1] - 2 A PNP [1] - 1.5 A - 300 mA - 1 A [2] - 310 mW [3] - 370 mW [1] IB base current (DC) IBM peak base current tp ≤ 300 µs; δ ≤ 0.02 Ptot total power dissipation Tamb ≤ 25 °C - 1.1 W Tj junction temperature - 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C - 600 mW Per device total power dissipation Ptot Tamb ≤ 25 °C [3] [1] Device mounted on a ceramic circuit board, Al2O3, standard footprint. [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. [3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 6. Thermal characteristics Table 6: Symbol Thermal characteristics Parameter Conditions Typ Unit [1] 340 K/W [2] 110 K/W Per transistor Rth(j-a) thermal resistance from junction to ambient [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [2] Device mounted on a ceramic circuit board, Al2O3, standard footprint. 9397 750 12701 Objective data sheet in free air © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 3 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor unless otherwise specified; for the PNP transistor with negative polarity collector-base cut-off current VCB = 60 V; IE = 0 A - - 100 nA VCB = 60 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off current VCE = 60 V; VBE = 0 V - - 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA VBEsat base-emitter saturation voltage IC = 1 A; IB = 50 mA - 0.95 1.1 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A - 0.82 0.9 V fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 220 - MHz DC current gain VCE = 5 V; IC = 1 mA 250 400 - 200 350 - ICBO TR1 (NPN) hFE VCEsat collector-emitter saturation voltage VCE = 5 V; IC = 500 mA [1] VCE = 5 V; IC = 1 A [1] IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA 100 150 - - 90 110 mV - 110 140 mV IC = 1 A; IB = 100 mA [1] - 200 250 mV [1] - 200 250 mΩ - 5.5 10 pF RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA Cc collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz DC current gain VCE = −5 V; IC = −1 mA TR2 (PNP) hFE VCEsat collector-emitter saturation voltage 200 350 - VCE = −5 V; IC = −500 mA [1] 150 250 - VCE = −5 V; IC = −1 A [1] 100 160 - IC = −100 mA; IB = −1 mA - −110 −160 mV IC = −500 mA; IB = −50 mA - −120 −175 mV IC = −1 A; IB = −100 mA [1] - −220 −330 mV [1] - 220 330 mΩ - 9 15 pF RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA Cc collector capacitance VCB = −10 V; IE = Ie = 0 A; f = 1 MHz [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 9397 750 12701 Objective data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 4 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor mle130 800 mle133 1.2 hFE VBE (V) 600 (1) (1) 0.8 (2) (2) (3) 400 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) TR1 (NPN) 1 10 102 103 104 IC (mA) TR1 (NPN) VCE = 5 V. VCE = 5 V. (1) Tamb = 100 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 100 °C. Fig 1. DC current gain as a function of collector current; typical values. Fig 2. Base-emitter voltage as a function of collector current; typical values. mle135 1 mle104 1 VCEsat (V) VCEsat (V) 10−1 10−1 (2) (1) 10−2 (3) (1) (3) 10−3 10−1 1 10 102 103 104 IC (mA) TR1 (NPN) 10−2 10−1 1 102 103 104 IC (mA) TR1 (NPN) IC/IB = 10. IC/IB = 20. (1) Tamb = 100 °C. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = −55 °C. Fig 3. Collector-emitter saturation voltage as a function of collector current; typical values. Fig 4. Collector-emitter saturation voltage as a function of collector current; typical values. 9397 750 12701 Objective data sheet 10 (2) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 5 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor mle129 1 mle134 1.2 VBEsat (V) VCEsat (V) (1) (2) 0.8 (3) (1) 10−1 (2) 10−2 10−1 1 10 102 0.4 103 104 IC (mA) TR1 (NPN) 0 10−1 1 10 102 103 104 IC (mA) TR1 (NPN) Tamb = 25 °C. IC/IB = 20. (1) IC/IB = 100. (1) Tamb = −55 °C. (2) IC/IB = 50. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values. Fig 6. Base-emitter saturation voltage as a function of collector current; typical values. 9397 750 12701 Objective data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 6 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor mle131 2 (6) (5) (4) (3) (2) IC (A) mle132 103 (1) RCEsat (Ω) 1.6 102 (7) (8) 1.2 (9) 10 (10) 0.8 1 0.4 (1) (2) (3) 10−1 0 0 1 2 3 4 5 10−1 1 VCE (V) TR1 (NPN) TR1 (NPN) Tamb = 25 °C. IC/IB = 20. (1) IB = 60 mA. (1) Tamb = 100 °C. (2) IB = 54 mA. (2) Tamb = 25 °C. (3) IB = 48 mA. (3) Tamb = −55 °C. 10 102 103 104 IC (mA) (4) IB = 42 mA. (5) IB = 36 mA. (6) IB = 30 mA. (7) IB = 24 mA. (8) IB = 18 mA. (9) IB = 12 mA. (10) IB = 6 mA. Fig 7. Collector current as a function of collector-emitter voltage; typical values. Fig 8. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 9397 750 12701 Objective data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 7 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor mle124 600 mle122 −1.2 VBE (V) hFE (1) (1) −0.8 400 (2) (2) (3) 200 0 −10−1 −0.4 (3) −1 −10 −102 0 −10−1 −103 −104 IC (mA) TR2 (PNP) −1 −10 −102 −103 −104 IC (mA) TR2 (PNP) VCE = −5 V. VCE = −5 V. (1) Tamb = 100 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 100 °C. Fig 9. DC current gain as a function of collector current; typical values. mle126 −10 Fig 10. Base-emitter voltage as a function of collector current; typical values. mle119 −1 VCEsat VCEsat (V) (V) −10−1 −1 (2) −10−1 −10−2 (1) (3) (2) (1) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 TR2 (PNP) TR2 (PNP) IC/IB = 20. IC/IB = 10. (1) Tamb = 100 °C. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = −55 °C. Fig 11. Collector-emitter saturation voltage as a function of collector current; typical values. −102 −103 −104 IC (mA) Fig 12. Collector-emitter saturation voltage as a function of collector current; typical values. 9397 750 12701 Objective data sheet −10 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 8 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor mle120 −10 mle123 −1.2 VBEsat (V) VCEsat (V) −1 (1) −1 (2) −0.8 (3) −0.6 −10−1 (1) −0.4 (2) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) TR2 (PNP) −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) TR2 (PNP) Tamb = 25 °C. IC/IB = 20. (1) IC/IB = 100. (1) Tamb = −55 °C. (2) IC/IB = 50. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig 13. Collector-emitter saturation voltage as a function of collector current; typical values. Fig 14. Base-emitter saturation voltage as a function of collector current; typical values. 9397 750 12701 Objective data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 9 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor mle125 −2 IC (A) (6) (5) (4) (3) (2) mle121 103 (1) RCEsat (Ω) −1.6 102 (7) −1.2 (8) (9) 10 −0.8 (10) 1 (1) −0.4 (2) 0 0 −1 −2 −3 −4 −5 VCE (V) (3) 10−1 −10−1 −1 TR2 (PNP) TR2 (PNP) Tamb = 25 °C. IC/IB = 20. (1) IB = −40 mA. (1) Tamb = 100 °C. (2) IB = −36 mA. (2) Tamb = 25 °C. (3) IB = −32 mA. (3) Tamb = −55 °C. −10 −102 −103 −104 IC (mA) (4) IB = −28 mA. (5) IB = −24 mA. (6) IB = −20 mA. (7) IB = −16 mA. (8) IB = −12 mA. (9) IB = −8 mA. (10) IB = −4 mA. Fig 15. Collector current as a function of collector-emitter voltage; typical values. Fig 16. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 9397 750 12701 Objective data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 10 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 8. Package outline Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 Fig 17. Package outline. 9397 750 12701 Objective data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 11 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 9. Revision history Table 8: Revision history Document ID Release date Data sheet status Change notice Order number Supersedes PBSS4160DPN_1 20040603 Objective data - 9397 750 12701 - 9397 750 12701 Objective data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 12 of 14 PBSS4160DPN Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions 12. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 12701 Objective data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 3 June 2004 13 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 3 June 2004 Document order number: 9397 750 12701 Published in The Netherlands