Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 3.0±0.2 4.0±0.2 ■ Features Parameter (Ta=25˚C) Symbol Collector to 2SD1423 base voltage 2SD1423A Collector to 2SD1423 Ratings 30 VCBO 25 1 V 50 Emitter to base voltage VEBO 7 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics marking V 60 VCEO emitter voltage 2SD1423A Unit 2 3 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 20V, IB = 0 1 µA VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 7 hFE1*1 VCE = 10V, IC = 150mA*2 85 hFE2 VCE = 10V, IC = 500mA*2 40 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA*2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Collector cutoff current Collector to base 2SD1423 voltage 2SD1423A Collector to emitter 2SD1423 voltage 2SD1423A Emitter to base voltage Forward current transfer ratio 30 V 60 25 V 50 V 340 0.6 200 MHz 15 6 *2 *1h FE1 V pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SD1423, 2SD1423A IC — VCE 1000 400 Collector current IC (mA) 300 200 100 800 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 600 400 3mA 2mA 200 1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.3 1 3 10 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 8 6 4 2 0 3 10 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 10 160 VCB=10V Ta=25˚C 250 Ta=75˚C 200 150 3 Collector current IC (A) fT — I E 25˚C –25˚C 100 50 140 120 100 80 60 40 20 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 1 30 VCE=10V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.1 12 300 IC/IB=10 0.01 0.01 0.03 10 IC/IB=10 hFE — IC 100 1 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 3 6 Transition frequency fT (MHz) Collector power dissipation PC (mW) Ta=25˚C 0 2 VCE(sat) — IC 1200 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 500 10 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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