Power Transistors 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • Darlington connection • High forward current transfer ratio hFE • Large peak collector current ICP • High collector to emitter voltage VCEO 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A Collector current IC 2 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 0.5±0.1 4.6±0.2 1 2 1: Emitter 2: Collector 3: Base TO-126B Package 3 Internal Connection C B ■ Electrical Characteristics TC = 25°C Parameter E Symbol Collector cutoff current 1.76±0.1 2.3±0.2 Conditions Min Typ Max Unit 0.1 µA 1 µA ICBO VCB = 25 V, IE = 0 Emitter cutoff current IEBO VEB = 4 V, IC = 0 Collector to base voltage VCBO IC = 100 µA, IE = 0 120 V Collector to emitter voltage VCEO IC = 1 mA, IB = 0 100 V Emitter to base voltage VEBO IE = 100 µA, IC = 0 5 V Forward current transfer ratio * hFE VCE = 10 V, IC = 1 A Collector to emitter saturation voltage VCE(sat) IC = 1 A, IB = 1 mA Base to emitter saturation voltage VBE(sat) IC = 1 A, IB = 1 mA Transition frequency fT VCE = 10 V, IE = −50 mA, f = 200 MHz 4 000 40 000 1.5 V 2 150 MHz Note) *: Rank classification Rank hFE Q R S 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 1 2SD1640 Power Transistors PC T a IC VCE 2.5 1.2 1.0 0.8 0.6 0.4 150µA 120µA 2.0 90µA 1.5 60µA 1.0 0.5 30µA 0.2 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10000 25˚C –25˚C 1000 3 TC=–25˚C 1 100˚C 25˚C 0.3 1 300 100 30 10 0.01 0.03 3 Collector current IC (A) 0.3 1 3 IC t=10ms t=100ms 300 t=1s 100 30 10 3 1 0.1 0.3 1 3 10 0.03 30 100 Collector to emitter voltage VCE (V) 0.1 0.3 1 50 40 30 20 10 1 3 10 30 100 Collector to base voltage VCB (V) Rth(t) t free air 103 102 10 1 10–1 10–4 3 IE=0 f=1MHz TC=25˚C 104 Single pulse TC=25˚C 1000 10 Collector current IC (A) Thermal resistance Rth(t) (˚C/W) 3000 0.01 0.01 0 0.1 Area of safe operation (ASO) ICP 0.03 Cob VCB TC=100˚C 3000 10 10000 0.1 Collector output capacitance Cob (pF) Forward current transfer ratio hFE 30 0.3 –25˚C 60 30000 0.1 TC=100˚C 0.3 VCE=10V IC/IB=1000 0.03 25˚C 1 Collector current IC (A) 100 0.1 0.01 3 hFE IC 100000 Collector current IC (A) 10 IC/IB=1000 10 Collector to emitter voltage VCE (V) VBE(sat) IC 2 Collector to emitter saturation voltage VCE(sat) (V) IB=180µA Collector current IC (A) Collector power dissipation PC (W) TC=25˚C Without heat sink 1.4 0 Base to emitter saturation voltage VBE(sat) (V) VCE(sat) IC 3.0 1.6 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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