2SD2118 5A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES D-Pack (TO-252) Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics CLASSIFICATION OF hFE Product-Rank 2SD2118-Q 2SD2118-R Range 120~270 180~390 A B C D GE PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch K M HF N O P J Collector 2 REF. A B C D E F G H 1 Base 3 Emitter Millimeter Min. Max. 6.35 6.8 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20 Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.50 1.1 0.9 1.65 0 0.15 0.43 0.58 REF. J K M N O P ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 6 V Collector Current -Continuous IC 5 A Collector Power Dissipation PC 1 W TJ ,TSTG 150 , -55~150 °C Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO 50 - - V IC=50µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 20 - - V IC=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 6 - - V IE=50µA, IC=0 Collector cut-off current ICBO - - 0.5 µA VCB=40V, IE=0 Emitter cut-off current IEBO - - 0.5 µA VEB=5V, IC=0 DC current gain hFE 120 - 390 VCE(sat) - - 1 V fT - 150 - MHz COB - 30 - pF Collector-emitter saturation voltage Transition frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 18-Nov-2011 Rev. A Test Conditions VCE=2V, IC=500mA IC=4A, IB=100mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1