Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 0.65 max. 14.5±0.5 ● 1.0 1.0 ● (1.45) 0.8 0.2 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping. ● 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 +0.1 *1 2.5±0.5 Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 7 A Collector current IC 5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 2.5±0.5 2 3 2.5±0.1 Parameter 1 +0.1 (Ta=25˚C) 0.45–0.05 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 or more, and the board 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 0.1 µA Collector cutoff current ICBO VCB = 20V, IE = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V hFE1 Forward current transfer ratio *1 VCE = 2V, IC = 500mA*2 120 340 hFE2 VCE = 2V, IC = 2.5A*2 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 100mA*2 0.19 0.3 V Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 100mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 80 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 60 60 MHz 70 *2 *1h FE1 pF Pulse measurement Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 1 2SD2179 Transistor PC — Ta IC — VCE 1.0 0.8 0.6 0.4 Ta=25˚C 2.0 0.2 IB=8mA 1.6 7mA 1.2 6mA 5mA 0.8 4mA 3mA 0.4 2mA 1mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 3 25˚C Ta=–25˚C 100˚C 0.3 0.1 0.03 1 3 10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 200 160 120 80 40 0 1 3 10 1 0.3 0.1 Ta=100˚C 25˚C 0.03 –25˚C 0.01 0.003 0.001 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 200 400 Ta=100˚C 300 25˚C –25˚C 200 100 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) fT — I E 1 3 Collector current IC (A) Cob — VCB 240 3 VCB=10V Ta=25˚C VCE=2V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.3 10 500 IC/IB=20 0.1 8 IC/IB=20 hFE — IC 100 0.01 0.01 0.03 6 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 1 4 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 2.4 Collector current IC (A) Collector power dissipation PC (W) 1.2 10 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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