DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTA114ET PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 15 1999 Apr 13 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ET FEATURES • Built-in bias resistors R1 and R2 (typ. 10 kΩ each) • Simplification of circuit design 3 handbook, 4 columns 3 • Reduces number of components and board space. R1 1 R2 APPLICATIONS 2 • Especially suitable for space reduction in interface and driver circuits 1 2 Top view MAM100 • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC114ET. MARKING 1 3 PINNING 2 PIN DESCRIPTION 1 base/input 2 emitter/ground (+) 3 collector/output 1999 Apr 13 PDTA114ET MARKING CODE(1) ∗03 Note MGA893 - 1 Fig.2 TYPE NUMBER Equivalent inverter symbol. 2 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −10 V VI input voltage positive − 10 V negative − −40 V − −100 mA IO output current (DC) ICM peak collector current Ptot total power dissipation Tstg − −100 mA − 250 mW storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current ICEO collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = −50 V − − −100 nA IB = 0; VCE = −30 V − − −1 µA IB = 0; VCE = −30 V; Tj = 150 °C − − −50 µA µA IEBO emitter cut-off current IC = 0; VEB = −5 V − − −400 hFE DC current gain IC = −5 mA; VCE = −5 V 30 − − VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −150 mV Vi(off) input-off voltage IC = −100 µA; VCE = −5 V − −1.1 −0.8 V Vi(on) input-on voltage IC = −10 mA; VCE = −0.3 V −2.5 −1.8 − V R1 input resistor 7 10 13 kΩ R2 -------R1 resistor ratio 0.8 1 1.2 Cc collector capacitance − − 3 1999 Apr 13 IE = ie = 0; VCB = −10 V; f = 1 MHz 3 pF Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ET MBK780 103 handbook, halfpage MBK779 −1 handbook, halfpage hFE VCEsat (1) (2) 102 (V) (3) −10−1 (1) (2) (3) 10 1 −10−1 −1 −10 IC (mA) −10−2 −1 −102 −10 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MBK782 −10 Collector-emitter saturation voltage as a function of collector current; typical values. MBK781 −102 handbook, halfpage handbook, halfpage −102 IC (mA) Vi(on) (V) Vi(off) (V) −10 (1) (2) −1 (1) (2) (3) (3) −1 −10−1 −10−2 −10−1 −1 IC (mA) −10−1 −10−1 −10 VCE = −5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = −0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Fig.6 Input-off voltage as a function of collector current; typical values. 1999 Apr 13 4 −1 −10 IC (mA) −102 Input-on voltage as a function of collector current; typical values. Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ET PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Apr 13 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ET DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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