Transistor 2SD0592, 2SD0592A (2SD592, 2SD592A) Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB0621 (2SB621) and 2SB0621A (2SB621A) Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SD0592 base voltage 2SD0592A Collector to 2SD0592 Ratings 30 VCBO V 60 1.27 VEBO Peak collector current ICP Collector current IC 1 A Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 5 V 1.5 A Symbol 2SD0592 voltage 2SD0592A Collector to emitter 2SD0592 voltage 2SD0592A Emitter to base voltage 1 2 3 2.54±0.15 Conditions ICBO Collector to base 1.27 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Collector cutoff current +0.2 0.45 –0.1 V 50 Emitter to base voltage ■ Electrical Characteristics +0.2 0.45 –0.1 25 VCEO emitter voltage 2SD0592A Unit 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 typ VCB = 20V, IE = 0 VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 hFE1 min *1 Unit 0.1 µA 30 V 60 25 V 50 5 340 IC = 500mA, IB = 50mA*2 0.2 0.4 V VBE(sat) IC = 500mA, IB = 50mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz hFE2 VCE = 5V, IC = 1A*2 Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage 85 V 160 Forward current transfer ratio VCE = 10V, IC = 500mA*2 max 50 MHz 20 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SD0592, 2SD0592A Transistor PC — Ta IC — VCE 1.0 IC — IB 1.50 1.2 0.6 0.4 0.2 IB=10mA 9mA 8mA 1.00 7mA 6mA 0.75 5mA 4mA 3mA 0.50 2mA 0.25 0 60 80 100 120 140 160 2 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 10 3 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 Collector output capacitance Cob (pF) 120 80 40 1 3 Emitter current IE (mA) –100 8 10 12 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 0.01 0.03 10 0.1 0.3 1 30 100 Collector current IC (A) VCER — RBE 120 IE=0 f=1MHz Ta=25˚C 40 30 20 10 0 –30 6 VCE=10 Cob — VCB 160 4 600 50 –10 2 Base current IB (mA) Collector current IC (A) VCB=10V Ta=25˚C –3 0 hFE — IC 30 fT — I E 0 –1 8 IC/IB=10 Collector current IC (A) 200 6 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.1 4 VBE(sat) — IC IC/IB=10 0.3 0.4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.6 0 0 Forward current transfer ratio hFE 40 0.8 0.2 1mA 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) 1.0 0 0 2 VCE=10V Ta=25˚C Collector current IC (A) 1.25 0.8 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IC=10mA Ta=25˚C 100 80 60 2SD0592A 40 2SD0592 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) 2SD0592, 2SD0592A Transistor ICEO — Ta 104 VCE=10V ICEO (Ta) ICEO (Ta=25˚C) 103 102 10 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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