SEMICONDUCTOR PF0314US6 TECHNICAL DATA EMI Filtering TVS APPLICATION EMI Filter and line termination for USB upstream ports on. USB Hubs B B1 PC peripherals 1 6 2 5 3 4 DIM A A1 B A C EMI/RFI filtering. A1 C FEATURES ESD Protection to IEC 61000-4-2 Level 4. D B1 C Low insertion loss. H Low clamping voltage. T Low operating and leakage current. 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G Good attenuation of high frequency signals. MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G DESCRIPTION 1. 2. 3. 4. 5. 6. The USB specification requires upstream ports to be terminated with pull-up resistors from the D+ and D- lines to V-bus. On the implementation of USB systems, the radiated and conducted EMI should be kept within the required levels D1 COMMON ANODE D2 D3 D4 D5 as stated by the FCC regulations and EMC compatibility, the computing devices are required to be tested for ESD susceptibility. US6 The PG0314US6 provides the recommended line termination while implementing a low pass filter to limit EMI levels and providing ESD protection which exceeds IEC EQUIVALENT CIRCUIT 61000-4-2 level 4 standard. The US6 package is the same size as SOT-363 in JEDEC standard. R 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) 6 D1 SYMBOL RATING UNIT *PD 200 mW Junction Temperature Tj 150 Storage Temperature Tstg D5 Rp 5 D4 D2 Power Dissipation C 2 C D3 4 3 R -55 150 RECOMMENEDED FOOTPRINT (dimensions in mm) * Total Package Power Dissipation 0.4 MARKING Lot No. 0.8 Type Name T2 1.9 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage 0.65 0.65 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V It=1mA 6 - 10 V IR VRWM=3.3V - - 0.5 R Between Input and Output - 33 - Rp Between Pin5 and Pin 6 - 1.5 - C VR=2.5V, Between I/O Pins and GND - 28 - VBR Reverse Breakdown Voltage Reverse Leakage Current Resistance Capacitance 2008. 9. 11 Revision No : 2 pF 1/2 PF0314US6 Analog Crosstalk 0 0 -5 -20 Crosstalk (dB) Insertion Loss (dB) S21 Attenuation -10 -15 -20 -25 1MHz 10MHz 100MHz 1GHz -100 1MHz 6GHz CT - VR IR - VR Reverse Current IR (µA) Capacitance Normalized to 0V 0.8 0.6 0.4 0.2 f=1MHz 0 2.0 3.0 4.0 102 100 10-2 10-4 5.0 0 2 4 6 8 10 Reverse Voltage (V) Reverse Voltage VR (V) Pull-up resistance(kΩ) - Ta( C) Series resistance(Ω) - Ta( C) 1.20 Normalized Series Resistance 1.5kΩ @25 C 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -40 104 10-6 1.20 1.15 1GHz 106 1.0 1.0 100MHz Frequency f (MHz) [email protected] 0 10MHz Frequency f (MHz) 1.2 Normalized Pull-up Resistance -60 -80 IL @5MHz : -2.23dB fc @IL-3dB : 149MHz -20 0 20 40 60 Temperature ( C) 2008. 9. 11 -40 Revision No : 2 80 100 1.15 33Ω @25 C 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -40 -20 0 20 40 60 80 100 Temperature ( C) 2/2