SEMICONDUCTOR PG24JSSMA TECHNICAL DATA Single Line TVS Diode for ESD Protection Protection of Voltage Sensitive Components. E 2 FEATURES H A Low profile package. D 1500 Watts peak pulse power (tp=8/20 s) Transient protection for data line to E IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) 1 C IEC 61000-4-5(Lightning) 38.6A(tp=8/20ns) B F APPLICATIONS DIM A B C D E F G H Devices for Unidirectional Applications. G Automotive Controller. Notebooks, Desktops, & Servers. 1. ANODE MILLIMETERS _ 0.2 4.5 + _ 0.2 2.6 + _ 0.2 1.5 + _ 0.3 5.0 + _ 0.3 1.2 + _ 0.2 2.0 + 0 ~ 0.15 R 0.5 2. CATHODE MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SMA SYMBOL RATING UNIT PPK 1500 W Peak Pulse Current (tp=8/20 s) IPP 38.6 A Operating Temperature Tj -55 150 Tstg -55 150 Peak Pulse Power (tp=8/20 s) * Storage Temperature * Notes) (1) Derated above Ta=25 Marking per power derating curve. (2) Mounted on 0.31 0.31”(8.0 8.0 Type Name ) copper pads to each terminal. 24S Lot No. 2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 24 V 26.7 - - V VBR Reverse Breakdown Voltage 1 It=1mA Reverse Leakage Current IR VRWM=24V - - 5 A Clamping Voltage VC IPP=38.6A, tp=8/20 s - - 38.9 V Junction Capacitance CJ VR=0V, f=1MHz - - 800 pF 2003. 9. 17 Revision No : 0 1/2 PG24JSSMA POWER DERATION CURVE 100 110 10 100 90 80 70 60 50 40 RATED POWER OR IPP (%) PEAK PULSE POWER PPK (kW) NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME 1 0.1 0.1 1 10 1K 100 10K Peak Pulse Power 8/20us 30 20 10 0 Average Power 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) PULSE DURATION tp (µs) PULSE WAVEFORM PEAK PULSE CURRENT I PP (%) 110 Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 e -t td=lpp/2 30 20 10 0 0 5 10 15 20 25 30 TIME (µs) 2003. 9. 17 Revision No : 0 2/2