RENESAS 2SJ247

2SJ247
Silicon P Channel MOS FET
REJ03G0854-0200
(Previous: ADE-208-1188)
Rev.2.00
Sep 07, 2005
Description
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
Rev.2.00 Sep 07, 2005 page 1 of 6
2
3
S
2SJ247
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Symbol
VDSS
Value
–100
Unit
V
VGSS
ID
±20
–8
V
A
–32
–8
A
A
40
150
W
°C
–55 to +150
°C
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel temperature
Pch
Tch
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
–100
Typ
—
Max
—
Unit
V
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
IDSS
VGS (off)
—
–1.0
—
—
–250
–2.0
µA
V
VDS = –80 V, VGS = 0
ID = –1 mA, VDS = –10 V
RDS (on)
RDS (on)
—
—
0.25
0.3
0.3
0.45
Ω
Ω
ID = –4 A, VGS = –10 V
Note 3
ID = –4 A, VGS = –4 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
3.0
—
5.5
880
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
325
80
—
—
pF
pF
ID = –4 A, VDS = –10 V
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
12
47
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
150
75
—
—
ns
ns
Body to drain diode forward voltage
Body to drain diode reverse recovery time
VDF
trr
—
—
–1.0
170
—
—
V
ns
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Note:
3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
Test Conditions
ID = –10 mA, VGS = 0
Note 3
ID = –4 A
VGS = –10 V
RL = 7.5 Ω
IF = –8 A, VGS = 0
IF = –8 A, VGS = 0
diF/dt = 50 A/µs
Note 3
2SJ247
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
–50
–30
ID (A)
Drain Current
–3
20
–1
Operation in
this area is
limited by RDS (on)
–0.3
–0.1
0
0
50
100
Case Temperature
Ta = 25°C
–0.05
–1
150
Tc (°C)
–3
–4.5 V
–16
–4 V
VDS = –10 V
Pulse Test
–3 V
VGS = –2.5 V
0
–4
–8
–12
–16
Drain to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
Drain Current
–8
25°C
Tc = 75°C
–5
Pulse Test
–4
ID = –10 A
–2
–5 A
–1
–2 A
0
0
–2
–4
–6
Gate to Source Voltage
Rev.2.00 Sep 07, 2005 page 3 of 6
–2
–8
–10
VGS (V)
0
–2
–4
–6
–8
Gate to Source Voltage
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–3
–4
0
–20
–10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain Current
–3.5 V
0
–25°C
–8
–6
–12
–4
VDS (V)
–10
Pulse Test
–6 V
–100 –300 –1000
–30
Typical Transfer Characteristics
ID (A)
ID (A)
–10 V
–10
Drain to Source Voltage
Typical Output Characteristics
–20
=
Channel Dissipation
)
)
µs
°C
ot
0
s
sh = 25
10
1
m
1
s ( (Tc
m
n
10 atio
r
pe
O
–10
DC
40
10 µs
PW
Pch (W)
60
5
Pulse Test
2
1
VGS = –4 V
0.5
–10 V
0.2
0.1
0.05
–0.5
–1
–2
–5
Drain Current
–10 –20
ID (A)
–50
2SJ247
1.0
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
0.8
ID = –10 A
0.6
–5 A
VGS = –4 V
0.4
–2 A
–10 A
0.2
–2 A, –5 A
VGS = –10 V
0
–40
0
40
80
120
Case Temperature
160
50
VDS = –10 V
Pulse Test
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
–0.1 –0.2
Tc (°C)
200
3000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10000
100
50
20
–1
–2
–5
Reverse Drain Current
1000
Ciss
300
Coss
100
10
–10 –20
IDR (A)
VDS
–60
VGS
VDD = –50 V
–25 V
–10 V
–8
–12
–16
–80
ID = –8 A
–100
0
10
20
Gate Charge
Rev.2.00 Sep 07, 2005 page 4 of 6
30
40
Qg (nc)
0
–10
–20
–30
–40
–50
–20
50
VGS (V)
500
Switching Time t (ns)
–40
–4
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
–20
VGS = 0
f = 1 MHz
Switching Characteristics
0
VDD = –10 V
–25 V
–50 V
–10
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
0
–5
Crss
30
di / dt = 50 A / µs
VGS = 0
–0.5
–2
Typical Capacitance vs.
Drain to Source Voltage
500
5
–0.2
–1
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
10
–0.5
td(off)
200
100
tf
50
tr
20
td(on)
10
VGS = –10 V, VDD = –30 V
PW = 2 µs, duty ≤ 1 %
5
–0.1 –0.2
–0.5
–1
Drain Current
–2
ID (A)
–5
–10
2SJ247
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
–20
Pulse Test
–16
–12
–8
–10 V
–5 V
–4
VGS = 0, 5 V
0
–1.2
–1.6
Source to Drain Voltage
VSD
0
–0.4
–0.8
–2.0
(V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch – c (t) = γ s (t) • θch – c
θch – c = 3.13°C/W, Tc = 25°C
2
0.0
PDM
0.03
0.0
1
1
o
sh
u
tp
D=
lse
0.01
10 µ
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –30 V
Vout
td(on)
Rev.2.00 Sep 07, 2005 page 5 of 6
10%
tr
10%
td(off)
tf
2SJ247
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-46
PRSS0004AC-A
TO-220AB / TO-220ABV
1.8g
Unit: mm
2.79 ± 0.2
11.5 Max
10.16 ± 0.2
9.5
+0.1
φ 3.6 –0.08
1.26 ± 0.15
15.0 ± 0.3
18.5 ± 0.5
1.27
6.4
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 Max
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 Max
0.5 ± 0.1
Ordering Information
Part Name
Quantity
Shipping Container
2SJ247-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0