RENESAS HAT2183WP

HAT2183WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G0530-0500
Rev.5.00
Oct 21, 2005
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.5.00, Oct 21, 2005, page 1 of 6
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
Ratings
150
±30
20
40
20
Unit
V
V
A
A
A
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
40
20
30
30
4.17
150
–55 to +150
A
A
mJ
W
°C/W
°C
°C
HAT2183WP
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Notes: 4. Pulse test
Rev.5.00, Oct 21, 2005, page 2 of 6
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Min
150
—
—
3.0
9
—
Typ
—
—
—
—
15
0.057
Max
—
1
±0.1
4.5
—
0.064
Unit
V
µA
µA
V
S
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
1200
260
25
32
53
69
11
27
7
10
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDF
trr
—
—
0.88
110
1.4
—
V
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 150 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 10 A, VDS = 10 V Note4
ID = 10 A, VGS = 10 VNote4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 10 A
VGS = 10 V
RL = 7.5 Ω
Rg = 10 Ω
VDD = 120 V
VGS = 10 V
ID = 20 A
IF = 20 A, VGS = 0 Note4
IF = 20 A, VGS = 0
diF/dt = 100 A/µs
HAT2183WP
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
30
Drain Current ID (A)
Channel Dissipation Pch (W)
40
30
20
10
10
50
100
150
D
1
Operation in this
RDS(on)
0.03
100
30
300
1000
VDS (V)
VDS = 10 V
Pulse Test
5.5 V
5.3 V
Drain Current ID (A)
Drain Current ID (A)
5.7 V
4
10
20
16
8
3
Typical Transfer Characteristics
6V
12
Ta = 25°C
Drain to Source Voltage
Pulse Test
7V
PW = 10 ms
(1shot)
0.01
Typical Output Characteristics
10 V
µs
0.1 area is limited by
Case Temperature Tc (°C)
20
10
s
)
0.3
0.001
1
200
s
0µ
C
(Tc Ope
= 2 ratio
5°C n
3
0.003
0
10
1m
VGS = 5 V
16
12
8
4
Tc = –75°C
25°C
−25°C
2
4
6
8
10
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source State Resistance
vs. Drain Current
4
3
2
ID = 20 A
1
10 A
5A
0
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Rev.5.00, Oct 21, 2005, page 3 of 6
Drain Source On Sate Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage
VDS(on) (V)
0
1
VGS = 10 V
0.5
0.2
0.1
0.05
0.02
0.01
1
Pulse Test
3
10
30
100 300 1000
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
VGS = 10 V
Forward Transfer Admittance |yfs| (S)
0.20
Forward Transfer Admittance vs.
Drain Current
Pulse Test
0.16
ID = 20 A
10 A
0.12
5A
0.08
0.04
0
−25
0
25
50
75
100 125 150
30
75°C
3
25°C
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
1
3
30
10
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
10000
500
3000
200
100
50
20
10
5
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
2
100
VGS = 0
f = 1 MHz
Ciss
1000
300
Coss
100
30
Crss
10
3
1
1
3
10
30
100
0
1000
50
100
150
Dynamic Input Characteristics
Switching Characteristics
VDD = 30 V
60 V
120 V
180
16
12
VDS
8
60
4
VDD = 120 V
60 V
30 V
0
8
16
24
32
Gate Charge Qg (nC)
Rev.5.00, Oct 21, 2005, page 4 of 6
40
1000
tf
Switching Time t (ns)
VGS
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
ID = 20 A
120
300
Reverse Drain Current IDR (A)
240
0
Tc = −25°C
10
Drain Current ID (A)
1
Drain to Source Voltage VDS (V)
100
Case Temperature Tc (°C)
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Static Drain to Source on State Resistance
RDS(on) (Ω)
HAT2183WP
VGS = 10 V, VDD = 75 V
PW = 5 µs, duty ≤ 1 %
RG = 10 Ω
tr
td(off)
100
td(on)
tf
10
tr
1
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
HAT2183WP
Gate to Source Cutoff Voltage VGS(off) (V)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
20
16
12
10 V
8
5V
4
VGS = 0, –5 V
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
-25
VSD (V)
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
3
γ s (t)
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch - c(t) = γs (t) • θ ch - c
θ ch - c = 4.17°C/ W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
e
uls
PW
T
PW
p
ot
T
sh
0.01
10 µ
D=
1
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
Vout
10%
10%
VDD
= 75 V
90%
td(on)
Rev.5.00, Oct 21, 2005, page 5 of 6
10%
tr
90%
td(off)
tr
HAT2183WP
Package Dimensions
JEITA Package Code

RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.085g
0.8Max
5.1 ± 0.2
Unit: mm
0.5 ± 0.15
Package Name
WPAK
4.21Typ
1.27Typ
+0.1
-0.2
5.9
3.8 ± 0.2
+0.1
-0.3
6.1
3.9 ± 0.2
0.05Max
0Min
Stand-off
1.27Typ
0.2Typ
0.5 ± 0.15
0.635Max
0.7Typ
0.04Min
0.4 ± 0.06
4.9 ± 0.1
(Ni/Pd/Au plating)
Ordering Information
Part Name
HAT2183WP-EL-E
Quantity
2500 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00, Oct 21, 2005, page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .4.0