MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE A D X (15 TYP.) R 123 4 H R R N 5678 9 11 10 12 1. V UPC 2. U FO 3. U P 4. V UPI 5. V VPC 6. V FO 7. V P 8. V VPI 9. V WPC 10. WFO 11. WP 12. V WPI 13. V NC 13 15 17 19 14 16 18 T - DIA. (2 TYP.) G F J S 20 21 P 22 P M 23 P 24 25 P P E 14. V NI 15. B R 16. U N 17. V N 18. W N 19. F O 20. P 21. B 22. N 23. U 24. V 25. W Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. C B Y 2.0 X 0.5 MM PIN (6 TYP.) U 0.8 X 0.4 MM PIN (19 TYP.) V K K W V UPI UP U FO V UPC V VPI VP V FO V VPC Features: u Complete Output Power Circuit u Gate Drive Circuit OUT V CC IN FO SI GND GND OUT V CC FO IN V WPI V SI GND GND WP WFO W OUT V CC FO V WPC OUN IN UN S UN N TB GND SI VN VN OVN TC B L GND GND WN WN UN FO FO S VN V N1 V CC OWN VNC GND S WN IN FO OUT V CC SI GND GND BR Q U u Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage P Outline Drawing and Circuit Diagram Dimensions Dimensions Inches Millimeters Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Inches Millimeters A 3.86±0.04 98.0±1.0 N 0.512 13.02 B 3.42±0.02 87.0±0.5 P 0.450±0.012 11.43±0.3 C 2.99 76.0 Q 0.31±0.02 8.0±0.5 D 2.400±0.03 60.96±0.8 R 0.300 E 2.250±0.03 57.15±0.8 S 0.24 Rad. Rad. 6.0 F 2.20±0.04 56.0±1.0 T 0.22 Dia. Dia. 5.5 G 1.77±0.03 45.0±0.8 U 0.16 4.0 Ordering Information: Example: Select the complete part number from the table below -i.e. PM30RSF060 is a 600V, 30 Ampere Intelligent Power Module. H 1.14 29.0 V 0.14 3.5 Type J 0.83 21.0 W 0.12±0.02 3.0±0.5 K 0.69 17.5 X 0.100±0.012 2.54±0.3 L 0.71±0.04 18.0±1.0 Y 0.04 1.0 M 0.588 14.925 7.62 PM Current Rating Amperes VCES Volts (x 10) 30 60 Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol PM30RSF060 Units Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Case Operating Temperature TC -20 to 100 °C Mounting Torque, M5 Mounting Screws — 1.47 ~ 1.96 N·m Power Device Junction Temperature Module Weight (Typical) — 80 Grams VCC(prot.) 400 Volts Viso 2500 Vrms Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) VD 20 Volts Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN-VNC) VCIN 20 Volts Fault Output Supply Voltage (Applied between UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC) VFO 20 Volts Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal) IFO 20 mA VCES 600 Volts Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Control Sector IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, ± Peak Collector Current, ± Supply Voltage (Applied between P - N) IC 30 Amperes ICP 60 Amperes VCC 450 Volts VCC(surge) 500 Volts PC 83 Watts VCES 600 Volts Collector Current, (TC = 25°C) IC 10 Amperes Peak Collector Current, (TC = 25°C) ICP 20 Amperes Supply Voltage, Surge (Applied between P - N) Collector Dissipation Brake Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Supply Voltage (Applied between P - N) VCC 450 Volts VCC(surge) 500 Volts Collector Dissipation PC 39 Watts Diode Forward Current IF 10 Amperes VR(DC) 600 Volts Supply Voltage, Surge (Applied between P - N) Diode DC Reverse Voltage Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units OC -20°C ≤ T ≤ 125°C, VD = 15V 39 53 — Amperes SC -20°C ≤ T ≤ 125°C, VD = 15V toff(OC) VD = 15V OT OTr UV Trip Level UVr Reset Level Applied between VUP1-VUPC, Control Sector Over Current Trip Level Inverter Part Over Current Trip Level Brake Part Short Circuit Trip Level Inverter Part 12 18 — Amperes — 80 — Amperes — 27 — Amperes — 10 — µs Trip Level 100 110 120 °C Reset Level — 90 — °C 11.5 12.0 12.5 Volts — 12.5 — Volts 13.5 15 16.5 Volts Short Circuit Trip Level Brake Part Over Current Delay Time Over Temperature Protection Supply Circuit Under Voltage Protection Supply Voltage VD VVP1-VVPC, VWP1-VWPC, VN1-VNC Circuit Current ID VD = 15V, VCIN = 15V, VN1-VNC — 25 30 mA VD = 15V, VCIN = 15V, VXP1-VXPC — 7 10 mA Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA IFO(L) VD = 15V, VFO = 15V — 10 15 mA tFO VD = 15V 1.0 1.8 — ms UN · VN · WN · Br-VNC Minimum Fault Output Pulse Width Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES VCE = VCES, Tj = 25°C — — 1.0 mA VCE = VCES, Tj = 125°C — — 10 mA Diode Forward Voltage VEC -IC = 30A, VD = 15V, VCIN = 15V — 2.5 3.5 Volts IGBT Inverter Sector Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 30A — 1.8 2.5 Volts VD = 15V, VCIN = 0V, IC = 30A, — 1.9 2.6 Volts 0.3 0.6 1.5 µs Tj = 125°C Inductive Load Switching Times ton trr VD = 15V, VCIN = 0 ↔ 15V — 0.12 0.3 µs tC(on) VCC = 300V, IC = 30A — 0.3 1.0 µs toff Tj = 125°C — 2.0 2.8 µs — 0.6 1.5 µs — 2.6 3.5 Volts — 2.9 4.0 Volts IF = 10A — 1.5 2.5 Volts VCE = VCES, Tj = 25°C — — 1 mA VCE = VCES, Tj = 125°C — — 10 mA tC(off) Brake Sector Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 10A, Tj = 25°C VD = 15V, VCIN = 0V, IC = 10A, Tj = 125°C Diode Forward Voltage VFM Collector Cutoff Current ICES Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Thermal Characteristics Characteristic Symbol Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — Rth(j-c)F Each Inverter FWDi — Rth(j-c)Q Brake IGBT — Rth(j-c)F Brake FWDi — Rth(c-f) Case to Fin Per Module, — Contact Thermal Resistance Condition Min. Typ. Max. Units — 1.5 °C/Watt — 3.0 °C/Watt — 3.2 °C/Watt — 4.5 °C/Watt — 0.067 °C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage VCC Applied across P-N Terminals 0 ~ 400 Volts VD Applied between VUP1-VUPC, 15 ± 1.5 Volts VN1-VNC, VVP1-VVPC, VWP1-VWPC Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts Input OFF Voltage VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC, 4.0 ~ VD Volts UN · VN · WN · Br-VNC PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz Minimum Dead Time tdead Input Signal ≥ 2.5 µs Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part 40 3.0 Tj = 25oC Tj = 125oC 4 3 2 1 0 IC = 30A VCIN = 0V Tj = 25oC Tj = 125oC COLLECTOR CURRENT, IC, (AMPERES) VD = 15V VCIN = 0V COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) 2.0 1.0 10 20 30 40 0 12 14 16 18 20 10 0 20 0.5 1.0 1.5 2.0 2.5 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 101 102 VCC = 300V VD = 15V SWITCHING TIMES, tc(on), tc(off), (µs) Inductive Load Tj = 25oC Tj = 125oC toff 100 ton Inductive Load Tj = 25oC Tj = 125oC 100 tc(off) tc(on) 10-1 100 101 10-1 100 102 101 VCC = 300V VC = 15V Inductive Load Tj = 25oC Tj = 125oC 101 100 100 102 101 102 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) DIODE FORWARD CHARACTERISTICS OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) 110 110 OVER CURRENT TRIP LEVEL % (NORMALIZED) VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC 101 100 Tj = 25oC OVER CURRENT TRIP LEVEL % (NORMALIZED) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) 13 VD = 17V SUPPLY VOLTAGE, VD, (VOLTS) VCC = 300V VD = 15V 100 90 80 70 0 0 15 30 COLLECTOR CURRENT, IC, (AMPERES) 101 102 Tj = 25oC VCIN = 0V 0 0 0 REVERSE RECOVERY CURRENT, Irr, (AMPERES) SATURATION VOLTAGE VCE(sat), (VOLTS) 5 SWITCHING TIMES, ton, toff, (µs) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1.0 2.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 3.0 VD = 15V 100 90 80 70 60 0 0 12 14 16 18 SUPPLY VOLTAGE, VD, (VOLTS) 20 -50 0 50 100 150 JUNCTION TEMPERATURE, Tj, (oC) Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) 15 2.5 14 2.0 UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS) FAULT OUTPUT PULSE WIDTH, tFO (ms) VD = 15V 1.5 1.0 .5 UVt UVr 13 12 11 10 0 0 -50 0 50 100 150 JUNCTION TEMPERATURE, Tj, (oC) -50 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 0 50 100 JUNCTION TEMPERATURE, TC, (oC) 150 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 1.5oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 3.0oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM30RSF060 FLAT-BASE TYPE INSULATED PACKAGE Brake Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 4 MAX 4 TYP 3 2 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC 1 0 20 MAX 3 TYP 2 VCIN = 0V IC = 10A Tj = 25oC Tj = 125oC 1 0 5 10 15 20 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC MAX 101 100 0 0.5 1.0 1.5 2.0 2.5 DIODE FORWARD VOLTAGE, VF, (VOLTS) 3.0 15 13 VD = 17V 15 MAX 10 5 12 14 16 18 20 0 1 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 3.2oC/W 10-2 10-1 TIME, (s) 100 3 4 5 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-3 10-3 2 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) DIODE FORWARD CHARACTERISTICS TYP 15 SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 102 Tj = 25oC VCIN = 0V TYP MAX 0 0 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 0 DIODE FORWARD CURRENT, IF, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 5 OUTPUT CHARACTERISTICS (TYPICAL) 101 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 4.5oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.1998