2SK3125 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3125 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.) • High forward transfer admittance: |Yfs| = 60 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) • Enhancement model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 70 Pulse (Note 1) IDP 210 Drain power dissipation (Tc = 25°C) PD 150 W Single pulse avalanche energy (Note 2) EAS 955 mJ Avalanche current IAR 70 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current A JEDEC ― JEITA ― TOSHIBA 2-16H1A Weight: 3.65 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 0.833 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C, L = 140 μH, RG = 25 Ω, IAR = 70 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 2SK3125 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V Drain-source breakdown voltage Vth VDS = 10 V, ID = 1 mA 1.5 ⎯ 3.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 30 A ⎯ 5.3 7.0 mΩ Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 30 A 30 60 ⎯ S Input capacitance Ciss ⎯ 4600 ⎯ Reverse transfer capacitance Crss ⎯ 1400 ⎯ Output capacitance Coss ⎯ 2300 ⎯ ⎯ 25 ⎯ ⎯ 40 ⎯ Gate threshold voltage Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton RL = 0.5 Ω 4.7 Ω Turn-ON time ID = 30 A VOUT 10 V VGS 0V Switching time Fall time ns tf Turn-OFF time VDD ∼ − 15 V Duty < = 1%, tw = 10 μs toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd pF VDD ∼ − 24 V, VGS = 10 V, ID = 70 A ⎯ 150 ⎯ ⎯ 425 ⎯ ⎯ 130 ⎯ ⎯ 90 ⎯ ⎯ 40 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 70 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 210 A IDR = 70 A, VGS = 0 V ⎯ ⎯ −1.7 V (Note 1) Forward voltage (diode) VDSF Reverse recovery time trr IDR = 70 A, VGS = 0 V, ⎯ 150 ⎯ ns Qrr dIDR/dt = 50 A/μs ⎯ 225 ⎯ nC Reverse recovery charge Marking TOSHIBA K3125 Part No. (or abbreviation code) Lot No. 2 2006-11-16 2SK3125 ID − VDS 100 10 Common source Tc = 25°C Pulse test 5 4.5 5 10 8 6 60 4 40 3.75 3.5 20 Common source Tc = 25°C Pulse test 4.5 80 6 8 Drain current ID (A) Drain current ID (A) 80 ID − VDS 100 4.25 4 60 40 VOU 3.5 20 VGS = 3.25 V VGS = 3.25 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 0 0 1 1 VDS (V) 2 3 Drain-source voltage ID − VGS 4 VDS (V) VDS − VGS 1.2 VDS (V) 80 Drain-source voltage Drain current ID (A) 100 60 40 25 20 100 0 0 1 2 Tc = −55°C Common source VDS = 10 V Pulse test 3 4 Gate-source voltage 5 5 1.0 0.8 0.6 ID = 70 A 0.4 30 0.2 0 0 6 Common source Tc = 25°C Pulse test VGS (V) 15 2 4 6 Gate-source voltage ⎪Yfs⎪ − ID 8 10 12 VGS (V) RDS (ON) − ID 100 100 Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) 1000 25 Tc = −55°C 100 10 1 1 10 VGS = 10, 15 V Common source VDS = 10 V Pulse test 10 100 1 1 1000 Drain current ID (A) Common source Tc = 25°C Pulse test 10 100 Drain current ID (A) 3 2006-11-16 2SK3125 RDS (ON) − Tc IDR − VDS 1000 IDR 12 ID = 15, 30 A 70 4 0 −80 −40 0 40 80 120 10 5 3 VGS = 0 V, −1 V 10 1 Common source Tc = 25°C Pulse test 1 0 160 0.4 Case temperature Tc (°C) VDS (V) 4 3 Drain-source voltage Vth (V) Gate threshold voltage 50 2 Common source VDS = 10 V ID = 1 mA Pulse test −40 0 40 1.6 2.0 VDS (V) Dynamic input/output characteristics Vth – Tc 0 −80 1.2 Drain-source voltage 5 1 0.8 80 120 40 Case temperature Tc (°C) 20 12 30 VDS 15 6 20 10 VDD = 24 V 10 5 VGS 0 0 160 25 Common source ID = 70 A Tc = 25°C Pulse test 40 80 120 160 VGS (V) 8 100 Gate threshold voltage 16 (A) Common source VGS = 10 V Pulse test Drain reverse current Drain-source ON resistance RDS (ON) (Ω) 20 0 200 Total gate charge Qg (nC) PD − Tc Drain power dissipation PD (W) 200 150 100 50 0 0 40 80 120 160 200 Case temperature Tc (°C) 4 2006-11-16 2SK3125 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 t 0.05 0.02 T Single pulse Duty = t/T Rth (ch-c) = 0.833°C/W 0.01 0.01 10 μ 100 μ 1m 10 m Pulse width tw 1 10 (S) EAS – Tch Safe operating area 1000 Avalanche energy EAS (mJ) 1000 ID max (pulse) * 100 μs * Drain current ID (A) 100 m ID max (continuous) 100 1 ms * DC operation Tc = 25°C 10 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 0.1 1 Drain-source voltage 600 400 200 0 25 VDSS max 10 800 50 75 100 125 150 Channel temperature (initial) Tch (°C) 100 VDS (V) 15 V BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 25 V、L = 140 μH 5 Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-16 2SK3125 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-16