SO T6 66 PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev. 1 — 6 October 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 290 380 mΩ VGS = -4.5 V; ID = -400 mA; Tj = 25 °C - 0.67 0.85 Ω Tj = 25 °C - - 20 V -8 - 8 V - - 800 mA - - -20 V -8 - 8 V - - -550 mA TR1 (N-channel), Static characteristics RDSon drain-source on-state resistance TR2 (P-channel), Static characteristics RDSon drain-source on-state resistance TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage ID [1] drain current Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D2 D1 4 G1 1 2 G2 3 SOT666 S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDT290UCE - plastic surface-mounted package; 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code PMDT290UCE AF 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - 20 V -8 8 V TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 800 mA VGS = 4.5 V; Tamb = 100 °C [1] - 500 mA - 3.2 A [2] - 330 mW [1] - 390 mW - 1090 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C TR1 (N-channel), Source-drain diode IS source current Tamb = 25 °C [1] - 370 mA HBM [3] - 2000 V TR1 N-channel), ESD maximum rating VESD electrostatic discharge voltage PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 2 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - -20 V TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = -4.5 V; Tamb = 25 °C - -550 mA VGS = -4.5 V; Tamb = 100 °C [1] - -350 mA Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -8 [1] Tamb = 25 °C - -2.2 A [2] - 330 mW [1] - 390 mW - 1090 mW Tsp = 25 °C TR2 (P-channel), Source-drain diode Tamb = 25 °C [1] - -370 mA electrostatic discharge voltage HBM [3] - 2000 V Ptot total power dissipation Tamb = 25 °C [2] - 500 mW source current IS TR2 (P-channel), ESD maximum rating VESD Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [3] Measured between all pins. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMDT290UCE Product data sheet 0 −75 175 Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 3 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa361 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10–1 (3) (4) (5) 10–2 10–1 1 10 VDS (V) 102 IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage 017aaa373 –10 ID (A) Limit RDSon = VDS/ID –1 (1) (2) –10–1 (3) (4) (5) –10–2 –10–1 –1 –10 VDS (V) –102 IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 4 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - 330 380 K/W [2] - 280 320 K/W - - 115 K/W [1] - 330 380 K/W [2] - 280 320 K/W - - 115 K/W - - 250 K/W TR1 (N-channel) thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) TR2 (P-channel) thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Per device Rth(j-a) thermal resistance from junction to ambient [1] in free air [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. 017aaa064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 5 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 7. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 6 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 102 10 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 8. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 0.75 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 500 nA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 500 nA VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 290 380 mΩ IGSS RDSon gfs gate leakage current drain-source on-state resistance transfer conductance VGS = 4.5 V; ID = 500 mA; Tj = 150 °C - 460 610 mΩ VGS = 2.5 V; ID = 200 mA; Tj = 25 °C - 420 620 mΩ VGS = 1.8 V; ID = 10 mA; Tj = 25 °C - 0.6 1.1 Ω VDS = 10 V; ID = 200 mA; Tj = 25 °C - 1.6 - S - 0.45 0.68 nC - 0.15 - nC - 0.15 - nC TR1 (N-channel), Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge PMDT290UCE Product data sheet VDS = 10 V; ID = 500 mA; VGS = 4.5 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 7 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance - 55 83 pF Coss output capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 15 - pF Crss reverse transfer capacitance - 7 - pF td(on) turn-on delay time - 6 12 ns tr rise time - 4 - ns td(off) turn-off delay time - 86 172 ns tf fall time - 31 - ns IS = 300 mA; VGS = 0 V; Tj = 25 °C 0.48 0.77 1.2 V VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C TR1 (N-channel), Source-drain diode characteristics VSD source-drain voltage TR2 (P-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.5 -0.8 -1.3 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - -2 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -2 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - -0.5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -0.5 µA VGS = -4.5 V; ID = -400 mA; Tj = 25 °C - 0.67 0.85 Ω VGS = -4.5 V; ID = -400 mA; Tj = 150 °C - 1.1 1.4 Ω VGS = -2.5 V; ID = -200 mA; Tj = 25 °C - 1.2 1.5 Ω VGS = -1.8 V; ID = -10 mA; Tj = 25 °C - 1.8 2.8 Ω VDS = -10 V; ID = -200 mA; Tj = 25 °C - 610 - mS - 0.76 1.14 nC - 0.28 - nC - 0.18 - nC - 58 87 pF - 21 - pF - 12 - pF - 18 36 ns IGSS RDSon gfs gate leakage current drain-source on-state resistance transfer conductance TR2 (P-channel), Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = -10 V; ID = -400 mA; VGS = -4.5 V; Tj = 25 °C VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -10 V; RL = 250 Ω; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 30 - ns td(off) turn-off delay time - 80 160 ns tf fall time - 72 - ns -0.48 -0.84 -1.2 V TR2 (P-channel), Source-drain diode characteristics VSD source-drain voltage PMDT290UCE Product data sheet IS = -300 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 8 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa351 0.7 ID (A) 0.6 4.5 V 2.5 V 1.8 V VGS = 1.6 V 017aaa352 10–3 ID (A) 0.5 10–4 0.4 (1) (2) 0.50 0.75 (3) 1.4 V 0.3 10–5 0.2 1.2 V 0.1 1.0 V 0.0 0 1 2 3 VDS (V) 4 10–6 0.00 Tj = 25 °C 0.25 1.00 1.25 VGS (V) Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 9. TR1; Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa353 2.0 RDSon (Ω) (2) (1) Fig 10. TR1; Sub-threshold drain current as a function of gate-source voltage 017aaa354 2.0 RDSon (Ω) (3) 1.5 1.5 1.0 1.0 (4) 0.5 (1) 0.5 (5) (6) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) (2) 0.7 0.0 0 1 Tj = 25 °C ID = 400 mA (1) VGS = 1.3 V (1) Tj = 150 °C (2) VGS = 1.4 V (2) Tj = 25 °C 2 3 4 VGS (V) 5 (3) VGS = 1.6 V (4) VGS = 1.8 V (5) VGS = 2.5 V (6) VGS = 4.5 V Fig 11. TR1; Drain-source on-state resistance as a function of drain current; typical values PMDT290UCE Product data sheet Fig 12. TR1; Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 9 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa355 0.7 ID (A) 0.6 017aaa356 1.75 a 1.50 0.5 1.25 0.4 0.3 1.00 0.2 (2) (1) 0.75 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS (V) 0.50 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 13. TR1; Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa357 1.25 Fig 14. TR1; Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa358 102 VGS(th) (V) (1) 1.00 C (pF) (1) 0.75 (2) (2) 10 0.50 (3) (3) 0.25 0.00 –60 0 60 120 Tj (°C) 180 1 10–1 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 15. TR1; Gate-source threshold voltage as a function of junction temperature PMDT290UCE Product data sheet 10 VDS (V) 102 Fig 16. TR1; Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 10 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa359 5 VDS VGS (V) 4 ID VGS(pl) 3 VGS(th) 2 VGS QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0.0 0.1 0.2 0.3 0.4 0.5 QG (nC) ID = 0.5 A; VDS = 10 V; Tamb = 25 °C Fig 17. TR1; Gate-source voltage as a function of gate charge; typical values 017aaa360 0.7 IS (A) 0.6 Fig 18. Gate charge waveform definitions 017aaa363 -0.5 -4.5 V ID (A) -2.5 V -2.0 V -0.4 VGS = -1.8 V 0.5 -0.3 0.4 (1) (2) -1.6 V 0.3 -0.2 0.2 -1.4 V -0.1 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V 0.0 0 -1 -2 -3 VDS (V) -4 Tj = 25 °C (1) Tj = 150 °C (2) Tj = 25 °C Fig 19. TR1; Source current as a function of source-drain voltage; typical values PMDT290UCE Product data sheet Fig 20. TR2; Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 11 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa364 -10-3 017aaa365 4 RDSon (Ω) ID (A) (2) (1) (3) 3 -10-4 (1) (3) (2) 2 (4) -10-5 1 -10-6 0.0 -0.5 -1.0 VGS (V) (5) 0 0.0 -1.5 -0.1 -0.2 Tj = 25 °C; VDS = -5 V Tj = 25 °C (1) minimum values (1) VGS = -1.5 V (2) typical values (2) VGS = -1.8 V (3) maximum values (3) VGS = -2.0 V -0.3 -0.4 ID (A) -0.5 (4) VGS = -2.5 V (5) VGS = -4.5 V Fig 21. TR2; Sub-threshold drain current as a function of gate-source voltage 017aaa366 4 Fig 22. TR2; Drain-source on-state resistance as a function of drain current; typical values 017aaa367 -0.5 ID (A) RDSon (Ω) -0.4 3 -0.3 2 -0.2 (1) (2) 1 (1) -0.1 (2) 0 0 -1 -2 -3 -4 VGS (V) -5 0.0 0.0 -0.5 ID = -400 mA VDS > ID × RDSon (1) Tj = 150 °C (1) Tj = 25 °C (2) Tj = 25 °C (2) Tj = 150 °C Fig 23. TR2; Drain-source on-state resistance as a function of gate-source voltage; typical values PMDT290UCE Product data sheet -1.0 -1.5 VGS (V) -2.0 Fig 24. TR2; Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 12 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa368 2.0 a 017aaa369 -1.5 (1) VGS(th) (V) 1.5 -1.0 (2) 1.0 (3) -0.5 0.5 0.0 -60 0 60 120 Tj (°C) 180 0.0 -60 0 60 120 Tj (°C) 180 ID = -0.25 mA; VDS = VGS (1) maximum values (2) typical values (3) minimum values Fig 25. TR2; Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa370 102 (1) C (pF) Fig 26. TR2; Gate-source threshold voltage as a function of junction temperature 017aaa371 -5 VGS (V) -4 (2) (3) -3 10 -2 -1 1 -10-1 -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V 0 0.0 0.2 0.4 0.6 QG (nC) 0.8 ID = -0.4 A; VDD = -10 V; Tamb = 25 °C (1) Ciss (2) Coss (3) Crss Fig 27. TR2; Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMDT290UCE Product data sheet Fig 28. TR2; Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 13 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa372 -0.5 VDS IS (A) -0.4 ID VGS(pl) -0.3 VGS(th) -0.2 VGS QGS1 QGS2 QGS QGD QG(tot) (1) -0.1 (2) 017aaa137 0.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 29. Gate charge waveform definitions Fig 30. TR2; Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 31. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 14 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 SOT666 Fig 32. Package outline SOT666 PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 15 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 10. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 33. Reflow soldering footprint for SOT666 PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 16 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMDT290UCE v.1 20111006 Product data sheet - - PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 17 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. PMDT290UCE Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 18 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved. 19 of 20 PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Test information . . . . . . . . . . . . . . . . . . . . . . . . .14 Quality information . . . . . . . . . . . . . . . . . . . . . .14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .15 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .17 Legal information. . . . . . . . . . . . . . . . . . . . . . . .18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Contact information. . . . . . . . . . . . . . . . . . . . . .19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 October 2011 Document identifier: PMDT290UCE