2SK3352 P- Channel Silicon MOS FET DC-DC Converter TENTATIVE Features and Applications • Low ON-state resistance. • Very high - speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% Allowable power Dissipation PD Tc=25°C Channel Temperature Storage Temperature unit V V A A W W °C °C 30 ±20 45 80 1.65 40 150 --55 to +150 Tch Tstg Electrical Characteristics / Ta=25°C min Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source on State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA , VDS=30V , VGS=±16V , VDS=10V , VDS=10V , ID=20A , ID=10A , VDS=10V , VDS=10V , VDS=10V , VGS=0 VGS=0 VDS=0 ID=1mA ID=20A VGS=10V VGS=4.5V f=1MHz f=1MHz f=1MHz typ 1.0 19 27 11 15 1400 420 210 14 530 100 150 28 4.6 5 1.0 VDS=10V, VGS=10V, ID=20A , unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V 1 ±10 2.4 See specified Test Circuit IS=45A max 30 VGS= 0 15 21 1.2 Marking : K3352 Package Dimensions 0.8 4.5 4 30° 30° 1.6 1.2 11.0 3 0.8 0.4 2.55 2.55 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.55 2.55 1 : Gate 2 : Drain 3 : Source 4 : Drain Specifications and information herin are subject to change without notice. 1 2 3 2.7 2.7 2.7 2 9.4 0.4 1 1.3 8.8 11.5 1.2 20.9 2.5 1.5 2.0 4.5 0to0.3 0.4 1.3 8.8 4 1.4 3 1.2 2.55 4.5 10.2 0.9 10.2 1.3 9.9 1.5max 8.8 2.55 2 1.35 3.0 4.5 0.9 10.2 1 0.8 SMP(unit:mm) SMP-FA (unit : mm) 4 9.9 0.9 SMP-FD (unit : mm) 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.55 2.55 SANYO Electric Co., Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 990915TM2fXHD 2SK3352 TENTATIVE Switching Time Test Circuit VDD=15V VIN 10V 0V ID=20A RL=0.75Ω VIN PW=10µS D.C.≤1% D VOUT G 2SK3352 P.G 50Ω S 990915TM2fXHD