Phototransistors PNZ147 (PN147) Silicon NPN Phototransistor Unit : mm For optical control systems 0.5±0.1 Features High sensitivity Type number : Emitter mark (Green) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2.8±0.2 0.15 R0.9 Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V IC 20 mA Collector power dissipation PC 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 0.85 ± 0.15 Absolute Maximum Ratings (Ta = 25˚C) 0.4±0.1 2.8±0.2 1.8 1.05±0.1 Small size designed for easier mounting to printed circuit board 1.8 2.2±0.15 (0.7) 45 Fast response : tr, tf = 3 µs (typ.) Collector current 2 ˚ Wide spectral sensitivity, matched to GaAs LEDs (0.7) 1 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage ICE(L)1*3 ICE(L)2 Conditions min VCE = 10V VCE = 10V, L = 2 lx*1 lx*1 max Unit 0.5 µA 12 µA 3.5 mA λP VCE = 10V 800 nm θ Measured from the optical axis to the half power point 24 tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω 3 10 µs 0.2 0.5 V VCE(sat) VCE = 10V, L = 500 3 typ 0.01 ICE(L) = 1mA, L = 1000 lx*1 deg. *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;;;; ;; 50Ω *3 I CE(L) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Classifications Class Q R S ICE(L) (µA) 3.0 to 11.0 7.0 to 24.0 >16.0 Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNZ147 PC — Ta ICE(L) — VCE 40 30 20 10 Ta = 25˚C T = 2856K ICE(L) (µA) 50 ICE(L) — L 10 5 16 L =1500 lx 12 Collector photo current ICE(L) (mA) 20 Collector photo current Collector power dissipation PC (mW) 60 1000 lx 8 500 lx 4 250 lx VCE = 10V Ta = 25˚C T = 2856K 10 4 10 3 10 2 100 lx 0 – 20 0 20 40 60 Ambient temperature 80 0 100 Ta (˚C ) 0 4 8 10 –3 10 –4 – 20 0 20 40 Ambient temperature 60 80 S (%) 1 50 40 30 20 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ tr , tf (µs) 60 80 120 VCC = 10V Ta = 25˚C RL = 1kΩ 10 500Ω 100Ω 1 10 –1 90˚ 10 –2 10 –1 1 Collector photo current 2 VCE = 10V Ta = 25˚C 80 60 40 10 0 200 400 600 800 1000 Wavelength λ (nm) Ta (˚C ) tr , tf — ICE(L) Rise time, Fall time 70 Relative sensitivity S (%) 90 40 10 2 100 80 0 Ambient temperature 20˚ 10 3 20 Ta (˚C ) 10˚ 10 2 L (lx) Spectral sensitivity characteristics 100 10 10 –1 – 40 100 10 1 Illuminance VCE = 10V T = 2856K Directivity characteristics 0˚ 10 24 Relative sensitivity VCE = 10V ICE(L) (mA) Dark current 10 –2 20 VCE (V) ICE(L) — Ta 10 2 Collector photo current ICEO (µA) 10 –1 16 Collector to emitter voltage ICEO — Ta 1 12 10 2 ICE(L) (mA) 1200 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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