2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage VGSS ±30 V ID 4 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1: Gate 2: Drain 3: Source A IDP 12 Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAS 345 mJ Avalanche current IAR 4 A Repetitive avalanche energy (Note 3) EAR 4.0 mJ TOSHIBA Channel temperature Tch 150 °C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 °C JEDEC ― JEITA SC-67 2-10U1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C, L = 39.6 mH, IAR = 4.0 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 2006-11-10 2SK3798 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current VGS = ±30 V, VDS = 0 V IGSS Gate-source breakdown voltage V (BR) GSS Drain cut-off current IG =±10 μA, VDS = 0 V VDS = 720 V, VGS = 0 V IDSS Drain-source breakdown voltage Test Condition Min Typ. Max Unit ⎯ ⎯ ±10 μA ±30 ⎯ ⎯ V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2 A ⎯ 2.5 3.5 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 2 A 1.4 2.8 ⎯ S Input capacitance Ciss ⎯ 800 ⎯ Reverse transfer capacitance Crss ⎯ 20 ⎯ Output capacitance Coss ⎯ 85 ⎯ VOUT ⎯ 20 ⎯ RL = 100 Ω ⎯ 65 ⎯ ⎯ 45 ⎯ ⎯ 165 ⎯ ⎯ 26 ⎯ ⎯ 14 ⎯ ⎯ 12 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Ω Switching time Fall time ID = 2 A 10 V VGS 0V tr tf Turn-off time VDD ∼ − 200 V Duty < = 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 4 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 4 A (Note 1) IDRP ⎯ ⎯ ⎯ 12 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 4 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 4 A, VGS = 0 V, ⎯ 1100 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 8.3 ⎯ μC Marking K3798 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SK3798 ID – VDS ID – VDS 5.75 3 5.5 DRAIN CURRENT ID (A) COMMON SOURCE Tc = 25°C PULSE TEST 10 6 DRAIN CURRENT ID 8 (A) 4 5.25 2 5 1 4.75 COMMON SOURCE Tc = 25°C PULSE TEST 10 6 6 5.75 4 5.5 5.25 2 5 4.75 VGS = 4.5 V 0 0 4 8 12 16 DRAIN-SOURCE VOLTAGE 20 VDS 0 0 24 (V) VGS = 4.5 V 4 8 12 ID – VGS 25 DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID VDS (V) Tc = −55°C PULSE TEST 4 100 2 0 0 2 4 6 GATE-SOURCE VOLTAGE 8 10 VGS (V) PULSE TEST ID = 4 A 12 8 2 4 0 0 1 4 8 12 16 VGS 20 (V) RDS (ON) – ID 10 Tc = −55°C 25 100 1 0.1 0.1 36 Tc = 25℃ 16 GATE-SOURCE VOLTAGE DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) PULSE TEST VDS 32 COMMON SOURCE (V) COMMON SOURCE VDS = 20 V 28 20 ⎪Yfs⎪ – ID 10 24 VDS – VGS VDS = 20 V 6 20 DRAIN-SOURCE VOLTAGE 8 COMMON SOURCE 16 1 DRAIN CURRENT ID 10 (A) COMMON SOURCE Tc = 25°C PULSE TEST VGS = 10, 15 V 1 0.01 0.1 1 DRAIN CURRENT ID 3 10 (A) 2006-11-10 2SK3798 RDS (ON) – Tc IDR – VDS 10 COMMON SOURCE VGS = 10 V PULSE TEST COMMON SOURCE DRAIN REVERSE CURRENT IDR (A) 8 6 ID = 4 A 1 4 2 2 0 −80 −40 0 40 80 CASE TEMPERATURE 120 Tc 5 Tc = 25°C PULSE TEST 3 1 0.5 0.3 0.1 0 160 (°C) 10 VGS = 0, −1 V 3 1 −0.4 −0.8 DRAIN-SOURCE VOLTAGE CAPACITANCE – VDS GATE THRESHOLD VOLTAGE Vth (V) (V) Coss 100 Crss 10 COMMON SOURCE VGS = 0 V Tc = 25°C 1 3 5 10 DRAIN-SOURCE VOLTAGE 30 50 VDS 3 2 COMMON SOURCE 1 (V) VDS (V) DRAIN-SOURCE VOLTAGE 40 20 CASE TEMPERATURE 0 40 80 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 60 80 −40 CASE TEMPERATURE PD – Tc 40 ID = 1 mA PULSE TEST 0 −80 100 VDS = 10 V 120 Tc 160 (°C) 500 400 20 VDS 16 400 VDD = 100 V 300 200 200 8 COMMON SOURCE 100 VGS ID = 4 A 4 Tc = 25°C 0 0 PULSE TEST 10 20 TOTAL GATE CHARGE 4 12 30 Qg 0 40 (V) 1 0.1 4 VGS (pF) Ciss 1000 C CAPACITANCE VDS 5 f = 1 MHz DRAIN POWER DISSIPATION PD (W) −1.6 Vth – Tc 10000 0 0 −1.2 GATE-SOURCE VOLTAGE DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) 10 (nC) 2006-11-10 2SK3798 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t SINGLE PULSE 0.01 T 0.01 Duty = t/T Rth (ch-c) = 3.125°C/W 0.001 10μ 100μ 1ｍ 10ｍ PULSE WIDTH 100ｍ 1 tw (s) SAFE OPERATING AREA EAS – Tch 100 (A) AVALANCHE ENERGY EAS (mJ) 400 ID max (PULSED) * DRAIN CURRENT ID 10 100 μs * 10 ID max (CONTINUOUS) * 1 ms * 1 DC OPERATION Tc = 25°C 300 200 100 0 25 0.1 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (°C) ※ SINGLE NONREPETITIVE PULSE Tc=25℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 0.01 1 10 15 V 100 DRAIN-SOURCE VOLTAGE 1000 VDS BVDSS IAR −15 V (V) VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 39.6mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-10 2SK3798 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-10