2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.) • Low leakage current: IDSS = −100 μA (VDS = −250 V) • Enhancement mode: Vth = −1.5~−3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS −250 V Drain-gate voltage (RGS = 20 kΩ) VDGR −250 V Gate-source voltage VGSS ±20 V (Note 1) ID −2.0 Pulse (t = 1 ms) (Note 1) IDP −4.0 Drain power dissipation PD 20 W JEITA SC-64 Single-pulse avalanche energy (Note 2) EAS 180 mJ TOSHIBA 2-7B1B Avalanche current IAR −2.0 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C DC Drain current A JEDEC ― Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = 75 mH, IAR = −2.0 A, RG = 25 Ω JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 2SJ610 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = −250 V, VGS = 0 V ⎯ ⎯ −100 μA V (BR) DSS ID = −10 mA, VGS = 0 V −250 ⎯ ⎯ V Vth VDS = −10 V, ID = −1 mA −1.5 ⎯ −3.5 V Drain-source ON-resistance RDS (ON) VGS = −10 V, ID = −1.0 A ⎯ 1.85 2.55 Ω Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, ID = −1.0 A 0.5 1.8 ⎯ S Input capacitance Ciss ⎯ 381 ⎯ Reverse transfer capacitance Crss ⎯ 52 ⎯ Output capacitance Coss ⎯ 157 ⎯ ⎯ 5 ⎯ ⎯ 20 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr Turn-on time VGS 0V ton tf Turn-off time Duty < = 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VOUT RL = 100 Ω 50 Ω Switching time Fall time ID = 1.0 A 10 V pF ns ⎯ 6 ⎯ ⎯ 36 ⎯ ⎯ 24 ⎯ ⎯ 11 ⎯ ⎯ 13 ⎯ VDD ∼ − 100 V VDD ∼ − −200 V, VGS = −10 V, ID = −2.0 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ −2.0 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ −4.0 A (Note 1) Forward voltage (diode) VDSF IDR = −2.0 A, VGS = 0 V ⎯ ⎯ 2.0 V Reverse recovery time trr IDR = −2.0 A, VGS = 0 V, ⎯ 120 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 540 ⎯ nC Marking J610 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ610 ID – VDS ID – VDS −4 −8 −6 −10 Common source Tc = 25°C, pulse test −5.5 −4.5 −1 VGS = −4 V −0.5 Common source Tc = 25°C, pulse test −6 −15 −8 −5 −15 −1.5 Drain current ID (A) Drain current ID (A) −2 −5.5 −10 −3 −5 −2 −4.5 −1 VGS = −4 V 0 −1 0 −2 −3 Drain-source voltage 0 0 −4 −5 VDS (V) −10 Drain-source voltage ID – VGS VDS (V) −3 Drain-source voltage Drain current ID (A) Common source VDS = −10 V Pulse test −2 25 Tc = −55°C 100 0 0 −1 −2 −3 −4 Gate-source voltage −5 Common source Tc = 25°C Pulse test −8 −6 −2 −4 ID = −1 A −2 0 0 −6 −2 VGS (V) −4 −6 Gate-source voltage ⎪Yfs⎪ – ID −8 −10 VGS (V) RDS (ON) − ID 10 10 Common source Common source VDS = −10 V 5 Pulse test 3 Drain-source ON-resistance RDS (ON) (Ω) (S) VDS (V) −10 −1 −20 VDS – VGS −4 Forward transfer admittance ⎪Yfs⎪ −15 Tc = −55°C 100 25 1 0.5 0.3 0.1 −0.1 −0.3 −0.5 −1 −3 −5 Tc = 25°C 5 VGS = 10 V Pulse test 3 1 0.5 0.3 0.1 −0.01 −10 Drain current ID (A) −0.03 −0.1 −0.3 −1 −3 −10 Drain current ID (A) 3 2006-11-16 2SJ610 IDR – VDS −100 (A) 4 Common source VGS = −10 V Pulse test −2 A 3 Drain reverse current IDR Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – Tc 5 ID = −1 A 2 1 Common source Tc = 25°C Pulse test −10 −1 VGS = −10 V −5 V 0 −80 −40 0 40 80 Case temperature Tc 120 0.1 0 160 0.2 (°C) −3 V 0.6 0.4 1.0 −5 Vth (V) Ciss Coss Gate threshold voltage 100 Crss 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 −0.1 −0.3 Common source VDS = −10 V ID = −1 mA Pulse test −4 −3 −2 −1 0 −80 −1 −3 −10 Drain-source voltage 1.4 1.2 VDS (V) Vth – Tc Capacitance – VDS (pF) 0.8 Drain-source voltage 1000 Capacitance C 0, 1 −30 −40 0 40 80 120 Case temperature Tc −100 160 (°C) VDS (V) PD – Tc Dynamic input/output characteristics −30 −300 40 20 10 −25 Tc = 25°C −200 Pulse test VDS −20 −15 −50 −100 VDD = −200 V −10 −100 −5 VGS (V) ID = −2 A Gate-source voltage VDS (V) 30 Drain-source voltage Drain power dissipation PD (W) Common source VGS 0 0 40 80 120 Case temperature Tc 160 0 0 200 (°C) 5 15 25 35 −0 Total gate charge Qg (nC) 4 2006-11-16 2SJ610 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.05 0.02 Single pulse 0.01 PDM t 0.01 T 0.005 Duty = t/T Rth (ch-c) = 6.25°C/W 0.003 0.001 10 μ 100 μ 1m 10 m 100 m Pulse width tw 1 10 100 (S) Safe operating area EAS – Tch −100 200 Avalanche energy EAS (mJ) −50 −30 Drain current ID (A) −10 −5 ID max (pulsed) * −3 100 μs * 1 ms * DC −1 160 120 80 40 −0.5 −0.3 0 25 50 −0.1 −0.0 100 125 150 * Single nonrepetitive pulse Tc = 25°C −0.0 Curves must be derated linearly 15 V with increase in temperature. −0.0 1 75 Channel temperature (initial) Tch (°C) VDSS max 3 5 10 30 50 Drain-source voltage 100 BVDSS IAR −15 V 300 500 1000 VDD VDS (V) Test circuit VDS Waveform RG = 25 Ω VDD = −50 V, L = 75 mH 5 2006-11-16 2SJ610 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-16